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IBM and Other Development Partners Deliver Major Semiconductor Performance Leap

malware

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#1
IBM and its joint development partners – Chartered Semiconductor Manufacturing, Freescale, Infineon Technologies AG, Samsung Electronics, STMicroelectronics N.V. and Toshiba Corporation – today announced that they have collectively demonstrated significant performance and power consumption advantages over industry standards by using a breakthrough material known as "high-k/metal gate” (HKMG) on silicon manufactured at IBM's state-of-art 300 millimeter (mm) semiconductor fabrication facility in East Fishkill, N.Y. With this achievement the joint development partners are now ready for early customer engagements.


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#2
Didn't AMD want to build a fab near IBM's fab there in east fishkill?

That would be nice...:D Maybe AMD would have a chance hahah
 

jbunch07

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#3
this is really good news!
good things are coming our way!
 
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#4
Didn't AMD want to build a fab near IBM's fab there in east fishkill?

That would be nice...:D Maybe AMD would have a chance hahah
haha. hope so
but i thought Intel was going to do something with that high-k and nehalem...
 
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#5
They keep talking about their clients, but who are they? And is AMD in that list of "clients"?
Definately good for us!
Sounds like this is going to get us down to that 20-25nm theoretical limit that much faster.
 
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#6
"In addition, testing on product library test chip and industry standard microprocessor critical paths has shown performance improvements of up to 40 percent over conventional (Poly/SiON) technology at the same technology dimensions." :twitch:
 

WarEagleAU

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#7
I think the PS3 CBE chip uses the same type of High K Metal Gate. AMD was tinkering with this and announced it before Intel said they would use it with Nehalem. However, Ive yet to see any chips from AMD using this process. I do know it saves alot of power, heat and energy with its efficiency which is good. And I can only surmise that AMD is included in the clients list.