1. Welcome to TechPowerUp Forums, Guest! Please check out our forum guidelines for info related to our community.

MIT researching the replacement of silicon for transistors

Discussion in 'News' started by zekrahminator, Dec 9, 2006.

  1. zekrahminator

    zekrahminator McLovin

    Joined:
    Jan 29, 2006
    Messages:
    9,066 (2.19/day)
    Thanks Received:
    321
    Location:
    My house.
    MIT researchers estimate that in roughly 10 to 15 years, we will hit a wall when it comes to increasing the performance of silicon. And so MIT got funding from Intel and began designing the next transistor material. Indium gallium arsenide, or InGaAs, is so far a very promising candidate. It moves electrons several times faster then silicon, does so in a 60nm transistor, and at a much lower voltage (.5 volts). Such promising material is much more fragile then silicon, which may cause problems during manufacturing. Intel, one of the sponsors of the project, is absolutely thrilled with the current results of the project.
    MIT will show off what it has at the IEEE International Electron Devices Meeting on December 11. MIT predicts that it will have working transistor prototypes using the new technology in 2 years.
    [​IMG]

    Source: CNET
     
    10 Year Member at TPU
  2. Alec§taar New Member

    Joined:
    May 15, 2006
    Messages:
    4,677 (1.16/day)
    Thanks Received:
    94
    Location:
    Someone who's going to find NewTekie1 and teach hi
    Gallium Arsenide I had heard about, a decade ago... it does have a faster "0/1" switching state than silicon does, but has some drawbacks from what I recall, in that in working w/ it there is SOMETHING extremely hazardous about it (poisonous hazmat stuff)...

    APK
     
    10 Year Member at TPU
  3. gamer210

    gamer210 New Member

    Joined:
    Dec 26, 2005
    Messages:
    136 (0.03/day)
    Thanks Received:
    1
    Location:
    University of Texas San Antonio
    I also have heard that Gallium Arsenide is more expensive to produce. I thought that Silicon Germanium was just as effective as Gallium Arsenide, but it was cheaper to produce.
     
    10 Year Member at TPU
  4. tofu

    tofu New Member

    Joined:
    Feb 2, 2006
    Messages:
    483 (0.12/day)
    Thanks Received:
    12
    Location:
    GTA
    Wasn't Intel investing in research for the application of Carbon Nanotubes?

    And now wtf are they doing with something that is poisonous, hard to manufacture :wtf:
     
    10 Year Member at TPU
  5. overcast New Member

    Joined:
    Jan 11, 2006
    Messages:
    733 (0.18/day)
    Thanks Received:
    2
    What happened to IBM's new Silicon Germanium transistor technology? It was demonstrated like 6 months ago. They had them operating at 500Ghz under extreme cooling and 350Ghz at room temperature.
     
    10 Year Member at TPU
  6. DanTheBanjoman Señor Moderator

    Joined:
    May 20, 2004
    Messages:
    10,480 (2.20/day)
    Thanks Received:
    1,382
    That was a single transistor. Having millions of transistors (a CPU) run at 350GHz is still impossible and that won't change for a long time.
    Also I believe it was longer than 6 months ago :)
     
    10 Year Member at TPU

Currently Active Users Viewing This Thread: 1 (0 members and 1 guest)