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| Processor | Intel Core 2 Quad Q6600 G0 VID: 1.2125 |
|---|---|
| Motherboard | GIGABYTE GA-P35-DS3P rev.2.0 |
| Cooling | Thermalright Ultra-120 eXtreme + Noctua NF-S12 Fan |
| Memory | 4x1 GB PQI DDR2 PC2-6400 |
| Video Card(s) | Colorful iGame Radeon HD 4890 1 GB GDDR5 |
| Storage | 2x 500 GB Seagate Barracuda 7200.11 32 MB RAID0 |
| Display(s) | BenQ G2400W 24-inch WideScreen LCD |
| Case | Cooler Master COSMOS RC-1000 (sold), Cooler Master HAF-932 (delivered) |
| Audio Device(s) | Creative X-Fi XtremeMusic + Logitech Z-5500 Digital THX |
| Power Supply | Chieftec CFT-1000G-DF 1kW |
| Software | Laptop: Lenovo 3000 N200 C2DT2310/3GB/120GB/GF7300/15.4"/Razer |
Samsung Electronics Co., Ltd, has announced that it has started mass producing 1GB NAND flash memory chips using a 70nm fabrication process. The NAND memory is designed for wide range of products including digital TVs, digital cameras and mobile hard drives which are slowly switching from NOR Flash memory to NAND. According to the manufacturer, the 70 nm Flash offers sustained read speeds of 108 MB/s, as compared to 68 MB/s of the 90 nm generation introduced in April 2004. Write speeds stay at 9.3 MB/s. The other two NAND players: Intel and Micron are to officially present their NAND flash, soon.
View at TechPowerUp Main Site
View at TechPowerUp Main Site
