Micron Technology, Inc., (Nasdaq:MU) today announced the availability of a replay-protected monotonic counter (RPMC) feature for their SPI NOR Flash memory devices, which are validated for future Intel Ultrabook platforms. The cost-effective 64Mb density is the sweet-spot solution currently available for immediate platform-enablement activities.

The RPMC feature in Micron's SPI NOR device is the first in a family of cryptographic primitives that will significantly enhance preboot security in cost-sensitive embedded, mobile, and personal computing architectures. The RPMC-enabled device facilitates critical nonvolatile data storage, while making systems resistant to rollback and replay attacks. It enables original equipment manufacturers (OEMs) to further strengthen code/data storage in the boot memory and deliver more secure systems to customers.
Micron's 64Mb RPMC-enabled SPI NOR device supports nonvolatile storage and authentication needs that are critical to the chipset security implementation for future Intel Ultrabook platforms and is compliant with Intel's Serial Flash Hardening Product External Architecture Specification. The device, which is available in SO8W and W-DFN 0.8mm packages, also includes improved erase performance to increase throughput and lower the initial cost of manufacturing programming.

ADATA Technology, a leading manufacturer of high-performance DRAM modules and NAND Flash storage application products, announced today that the company's new generation DDR4 SDRAM modules will be on display at the Intel Developer Forum 2013 (IDF13), held this year in San Francisco. Targeting server and render farm applications, the new DDR4 modules show that ADATA is once again at the front of the pack in providing new high-performance solutions to the enterprise market.

DDR4 SDRAM stands for double data rate fourth generation synchronous dynamic random-access memory, and its most notable features are faster clock frequencies and data transfer rates as compared to DDR3, as well as low power consumption. Running at just 1.2 volts, these new modules are expected to achieve transfer rates of 3.2Gbps, at frequencies as high as 2133MHz, far outstripping the capabilities of previous generations of DRAM. In large scale server applications, the advantages of DDR4 will lead to lower costs and greatly improved overall system performance. The new DDR4 SDRAM modules will be showcased along with the company's other premium memory solutions at booth number 554 at IDF13.

In the swarming SSD market, what better way to blast your way from obscurity to worldwide attention, than launching a ludicrously fast SSD? KingSpec unveiled the MC2J677M1T, a PCI-Express SSD that's tested to be capable of sequential speeds as high as 2.5 GB/s (gigabytes per second). Pictured below, the drive is an almost full-height add-on card with PCI-Express 2.0 x8 bus interface. The card seats a high performance SATA 6 Gb/s RAID controller by LSI (under that fan-heatsink), which is wired to eight mSATA 6 Gb/s ports, holding the eight sub-units.

The eight mSATA SSD sub-units on the MC2J677M1T each hold 120 GB of data (totaling 960 GB). Each sub-unit runs a JMicron-made controller, Intel-made MLC NAND flash, and Nanya-made DRAM cache. The LSI RAID controller is designed to be plug-and-play, i.e., the drive is bootable, and you won't need an F6 driver during Windows installation to detect the drive. A quick ATTO benchmark run by TheSSDReview, which has one of these drives, yielded sequential read speeds well past 2,500 MB/s.

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it is mass producing the most advanced DDR4 memory, for enterprise servers in next-generation data centers.

With the introduction of these high-performance, high-density DDR4 modules, Samsung can better support the need for advanced DDR4 in rapidly expanding, large-scale data centers and other enterprise server applications.

Super Talent Technology, a leading manufacturer of NAND flash storage solutions, today announces the availability of the long awaited USB 3.0 Express DramDisk. With sequential read scores of up to 4041 MB/s and sequential write scores of up to 5388 MB/s, the USB 3.0 Express DramDisk is a speed demon of a drive housed in a sleek aluminum casing. The USB 3.0 Express DramDisk and its unique built-in software utilizes your computer's available RAM to transfer files at an amazingly quick rate. Software is included.

This USB also transfers files while you are using the program, cutting down on wait time later. A productivity gem for creative professionals whose daily regime relies upon constantly moving files on-the-go-cutting their valued time in half.

Micron Technology, Inc. (Nasdaq:MU) ("Micron") and Elpida Memory, Inc. ("Elpida") trustees announced today the closing of Micron's acquisition of 100 percent of Elpida's equity, pursuant to a Sponsor Agreement entered into on July 2, 2012 in connection with Elpida's corporate reorganization proceedings conducted under the jurisdiction of the Tokyo District Court. In a related transaction, Micron also announced today the completion of its acquisition of a 24 percent share of Rexchip Electronics Corporation from Powerchip Technology Corporation and certain of its affiliates. The transactions will be recorded for accounting purposes as being effective at 11:59 p.m., Tokyo time, on July 31, 2013.

Elpida's assets include a 300 millimeter (mm) DRAM fabrication facility located in Hiroshima, Japan; an approximate 65 percent ownership interest in Rexchip, whose assets include a 300mm DRAM fabrication facility located in Taiwan; and a 100 percent ownership interest in Akita Elpida Memory, Inc., whose assets include an assembly and test facility located in Akita, Japan. Together with the Rexchip shares acquired from Powerchip, Micron will control approximately 89 percent of Rexchip's outstanding shares and 100 percent of Rexchip product supply. The manufacturing assets of Elpida and Rexchip together can produce more than 185,000 300mm wafers per month, which represents an approximate 45 percent increase in Micron's current manufacturing capacity.

ADATA Technology, a leading manufacturer of high-performance DRAM modules and NAND Flash application products, announced today the launch of the latest XPG V2 series overclocking memory, running at a stellar 3100 megahertz. This new product's dual channel is designed to bring ultimate performance to gamers using Intel Core fourth-generation processors and the latest Z87 platform.

The XPG 3100 V2 is the result of special cooperation with Asrock, and suitable for all motherboards that employ the enthusiast oriented Z87 chipset. Due to strict compatibility testing and QVL (Qualified Vendor List) certification, the modules can be directly overclocked using XMP (EXtreme Memory Profile) to the highest frequency of 3100Mhz. This unprecedented speed will gratify those who always seek an edge in boosting system performance.

SK hynix memory solutions (SKHMS) is pleased to announce that Dr. Khandker Nazrul Quader has joined SKHMS as President and CEO effective June 21, 2013. "It has been nearly one year since SK hynix acquired controller expertise through the acquisition of Link-A-Media Devices, now SK hynix memory solutions (SKHMS)," stated Dr. Park, President and CEO of SK hynix and Chairman of the Board of SKHMS. "The addition of Dr. Quader's leadership with his extensive background in NAND technology and design, Advanced Non-volatile memories and DRAM storage technologies and his extensive experience and expertise in Multi-level Flash memory management systems will further leverage the value of the SKHMS team, especially at this time of significant market growth in the areas of Flash memory based storage solutions. It is my pleasure to welcome Dr. Quader as part of SK family."

"I'm very excited to join and lead the SKHMS (formerly Link-A-Media) team at a time when the flash memory industry is poised for phenomenal growth in SSD and mobile markets," said Dr. Quader. "The integration of the controller solution know-how of SKHMS combined with the Advanced Non-volatile memories and DRAM technologies and the manufacturing capabilities of SK hynix is producing leading-edge products across multiple market segments. Full vertical integration of controller hardware, advanced flash memory systems architecture, firmware, NAND, other forms of non-volatile memory, and DRAM coupled with high volume memory manufacturing capability is quite rare in the industry and allows our customers to have a one-stop storage solution provider with the capacity, support and expertise the industry demands. The combined focus of SK hynix and SKHMS provides excellent opportunity to become a market leader in Enterprise, Client and Mobile storage."

Acer America today announced that its new 20-inch class Veriton Z2640G all-in-one (AIO) commercial desktop is now available for users in business, education and government. The new all-in-one desktops feature a screw-less chassis design and modular components for easy maintenance and upgrades. Removable feet and VESA wall-mount support enable these systems to be hung on the wall to save space, while a flexible frame that tilts from 6 to 60 degrees can be adjusted for maximum viewing comfort. These systems also come with an integrated 2.0 MP Full HD webcam that can be adjusted up to 180 degrees, which is particularly useful when collaborating via web chats with others in the same room.

The Veriton Z2640G series includes two models offering a choice of either Windows 8 Pro or Windows 7 Professional. The Acer Veriton Z2640G-UC1007X comes with an Intel Celeron processor 1007U (2M cache, 1.50 GHz, Dual Core) and 2GB SDRAM DDR3 (expandable to 16GB) and is available for an estimated selling price (ESP) of $539. The Veriton Z2640G-UP2117X with an Intel Pentium Processor 2117U (2M cache, 1.80 GHz, Dual Core) and 4GB DDR3 SDRAM (expandable to 16GB) is available for an ESP for $599.

Rambus Inc., the innovative technology solutions company, and SK Hynix, the world's top tier memory semiconductor supplier, today announced they have signed a five-year patent license agreement for the use of Rambus memory-related patented innovations in SK Hynix semiconductor products and have also settled all outstanding claims. The agreement includes a license to certain DRAM products for payments of $12 million per quarter for the next five years. Other terms of the agreement are confidential.

"This is a milestone agreement for both companies that puts years of legal disputes behind us and gives us the opportunity for collaboration," said Dr. Ron Black, president and chief executive officer at Rambus. "With this agreement, we can focus more on engaging with the industry as we work on future challenges where we can bring invention and value to the market with superior solutions and products."

Crucial, a leading global brand of memory and storage upgrades, today announced the immediate availability of the Crucial Ballistix Sport XT memory, which offers a new aggressively-styled, taller heat spreader design that improves thermal performance. Designed for gamers and enthusiasts looking for fast and responsive performance, Ballistix Sport XT modules offer XMP profiles for advanced speeds and timings as well as easy BIOS configuration in supported systems.

"The Crucial Ballistix Sport series is designed to provide mainstream users and performance enthusiasts with a reliable, no-hassle gaming experience," said Jeremy Mortenson, senior product manager, Crucial. "The new Sport XT memory offers an attractive new heat spreader styling for gamers who are looking for enhanced thermal performance, and a new colour that complements popular motherboards."

Corsair, a worldwide designer of high-performance components to the PC hardware market, today announced the Corsair Vengeance Pro Series of high-performance DDR3 computer memory for PC overclockers, enthusiasts, and system builders. Available initially in capacities up to 64 GB and speeds up to 2933 MHz, the Vengeance Pro Series memory modules are designed to set new levels of value and overclocking performance with the 4th generation Intel Core processor family (codenamed Haswell) and previous generation Intel and AMD platforms.

Vengeance Pro Series memory modules are built with eight-layer PCBs and RAM ICs specially selected for speed and overclocking headroom, and like all Vengeance memory, incorporate XMP 1.3 profiles allow for automatic, reliable overclocking. The memory kits are designed with new aggressively styled, aluminum heat spreaders for superior cooling. The memory kits are available in black with silver, red, blue, or gold accents to enable enthusiasts, gamers, and modders to customize the look of their PCs.

AMD today unveiled a new family of low power server processors: the AMD Opteron X-Series optimized for scale-out server architectures. The first AMD Opteron X-Series processors, formerly known as "Kyoto," are the highest density, most power-efficient small core x86 processors ever built. The new X1150 and X2150 processors beat the top performing Intel Atom processor on key performance benchmarks, including single thread and throughput performance with superior power-efficiency, twice the cores and L2 cache with a more advanced pipeline architecture, higher integration and support for up to 32 gigabytes of DRAM -- 4x more than the Intel Atom processor.

The AMD Opteron X-Series processors come in two variants. The AMD Opteron X2150, which consumes as little as 11 watts, is the first server APU system-on-a-chip integrating CPU and GPU engines with a high-speed bus on a single die. This enables customers to take advantage of leading-edge AMD Radeon HD 8000 graphics technology for multimedia-oriented server workloads. The AMD Opteron X1150, which consumes as little as 9 watts, is a CPU-only version optimized for general scale-out workloads.

ADATA Technology, a leading manufacturer of high-performance DRAM modules and NAND Flash application products, has launched a new DashDrive UV150 USB Flash drive, a value-priced USB 3.0 solution with an attractive pearlescent exterior.

The sleek contour of the UV150 makes the drive as easy in the hand as it is on the eyes, and the USB connector cap snaps in cleanly in the rear of the drive to prevent cap loss. A broad lanyard slot at the base of the drive allows for use with a wider range of carrying straps than is often seen in USB Flash drives. These factors, combined with a weight of only 9g (0.3oz), make the UV150 an essential accessory in today's world of value-driven digital mobility Read transfer speed reaches 90 MB per seconds, provided the needed performance for the most common data storage needs.

Innodisk, a designer and manufacturer of SSDs for commercial and industrial applications, announces a release of the industrial-embedded industry's first SATA device in accordance to SATA µSSD standards - nanoSSD.

Through the integration of a control chip, flash memory and peripheral power components into a single ball grid array (BGA) package, Innodisk has managed to reduce the size of the nanoSSD to approximately 1% the size of a 2.5" SSD. With dimensions of only 16 x 20 x 2 mm (WxLxH), a weight of only 1.5g, SATA III support, capacities ranging from 4 to 64 GB and both x86 and ARM compatibility, nanoSSD can be incorporated into a wide variety of applications where a small form-factor and high transfer rates are important, including industrial mobile devices, embedded systems, tablets, high-end smart phones and Ultrabooks.

Innodisk is proud to be among the first to supply (DDR4) registered DIMM product samples to key server companies for their next-generation systems. With this announcement, Innodisk, an industry leader in DRAM modules for industrial applications and embedded systems, will continue to offer the most advanced technology to its customers. The result of almost eight years of development, DDR4 (Double Data Rate 4) technology improves on the previous generation, DDR3, in every way. These new memory products provide users with greater performance, but can still cut costs by saving power and space, and reducing waste heat.

DDR4 offers a giant leap in peak performance over DDR3 technology, with a 3.2 Gbps data transfer rate. In fact, DDR4 could eventually even surpass this already high rate, according to standards organization JEDEC, in the same way that DDR3 surpassed its initial ceiling of 1.6 Gbps. DDR4 memory bus speeds start at 2133MHz, which already offers a huge jump in potential performance from the average bus speed of 1333MHz and 1666MHz offered by DDR3.

ADATA Technology, a leading manufacturer of high-performance DRAM modules and NAND Flash application products, today announced a small but stylish addition to its DashDrive family of USB Flash drives. The new DashDrive Choice UC510 packs durability and charm into a super small and handy profile.

With this new drive, ADATA has once again made the most of Chip on Board (COB) technology, and the result is a highly water-resistant, durable device that is ultra-small and easy to carry. The drive body shines with a metallic gleam, and the capless design eliminates the need for a drive cap and the related chance of cap loss. The UC510 has a USB 2.0 interface, providing the required performance for most common data storage and transfer needs.

SMART Modular Technologies, Inc., a leading independent designer, manufacturer and supplier of value added subsystems including memory modules, flash memory cards and other solid state storage products, today announced the addition of a 24GB CoolFlex RDIMM to its product lineup. The 24GB DDR3-1333 1.35V RDIMM helps solve unique memory capacity constraints in servers. SMART's CoolFlex module product family uses state-of-the-art flexible substrate technology to increase system memory capacity.

Servers configured with two processors and sixteen registered DIMMs are generally limited to a maximum memory capacity of 256GB. When using 16GB DDR3-1333 RDIMMs these systems can be fully populated. However, when switching to 32GB four-rank RDIMMs, the maximum number of DIMMs per Channel (DPC) drops down to one. A system configured with two channels per processor and four DIMMs per channel can only be populated with one 32GB RDIMM per channel for a total memory capacity of 128GB. SMART's new 24GB Coolflex RDIMM solves this constraint by allowing these systems to be fully populated with sixteen 24GB RDIMMs totaling 384GB and representing a 50% increase in memory capacity.

With its 4th generation Core "Haswell" processors, Intel is putting in a serious effort to improve integrated graphics (IGP) performance to catch up with AMD's Radeon HD 8600 series on its latest APUs. There are three classes of Intel IGPs for Haswell, the GT1, which features 10 execution units (EUs), and will feature on entry-thru-mainstream Pentium, Core i3, and Core i5 chips; GT2, which features 20 EUs, featuring on mainstream-thru-performance Core i5 and Core i7 chips; and GT3, a large 40-EU IGP, which uses an L4 eDRAM cache. Chips with GT3 graphics are multi-chip modules (MCMs) of the CPU die and this eDRAM due, as detailed earlier. It was earlier believed that Haswell chips with GT3 graphics cores will be confined to notebook and Ultrabook-specific CPU models, but it turns out that it will make an appearance on the desktop platform as well.

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced the industry's first production of ultra-high-speed four gigabit (Gb) low power double data rate 3 (LPDDR3) mobile DRAM, which is being produced at a 20 nanometer (nm) class* process node. The new 4Gb LPDDR3 mobile DRAM enables performance levels comparable to the standard DRAM utilized in personal computers, making it an attractive solution for demanding multimedia-intensive features on next-generation mobile devices such as high-performance smartphones and tablets.

"By providing the most efficient next-generation mobile memory with a very large data capacity, we are now enabling OEMs to introduce even more innovative designs in the marketplace," said Young-Hyun Jun, executive vice president, memory sales & marketing, Samsung Electronics. "Our 20nm-class four gigabit mobile DRAM provides another example of our ability to deliver well-differentiated, high-performance, high-density memory to customers in a timely manner."

ADATA Technology Co., Ltd. a world leader in DRAM modules and NAND Flash storage application products, today announced the start of shipments of its latest advanced in gaming technology, the XPG Gaming v2.0 Series DDR3-2600 MHz DRAM 8GB modules. These dual channel kits are designed and engineered to bring optimum performance to third generation Intel Core processors and the Z77 platform.

XPG DRAM modules signify Xtreme Performance Gear, providing the extreme speed and performance required by advanced users. The XPG Gaming series v2.0 is targeted specifically at the distinct performance and cooling needs of the worldwide gaming community. These latest DDR3 2600G 8GB modules offer new levels of data transfer speed, along with the many features that are hallmarks of the XPG series.

To tackle upcoming generations of Ultrabooks and NUC that lack space for discrete graphics, yet having to keep up with the demands of higher display resolutions (i.e. proliferation of 3840 x 2160), Intel is designing special variants of its Core "Haswell" processors that feature large integrated graphics cores bolstered by fourth-level eDRAM caches on-package. Pictured below, is one such contraption.

The graphics-enhanced Core "Haswell" processor is an MCM (multi-chip module) of two dies, the larger one is the actual "Haswell" processor complex with cores, uncore, and the larger GT3 integrated graphics core. While the standard Haswell silicon with GT1 and GT2 integrated GPU options, physically features up to 20 execution units (EUs), the large GT3 silicon features double that, at 40 EUs.

During her keynote at the Intel Developer Forum today in Beijing, Diane Bryant, senior vice president and general manager of Intel's Datacenter and Connected Systems Group, discussed how her company is helping users harness powerful new capabilities that will improve the lives of people by building smarter cities, healthier communities and thriving businesses.

Bryant unveiled details of upcoming technologies and products that show how Intel aims to transform the server, networking and storage capabilities of the datacenter. By addressing the full spectrum of workload demands and providing new levels of application optimized solutions for enterprise IT, technical computing and cloud service providers, unprecedented experiences can be delivered.

More than 100 developer and adopter members of the Hybrid Memory Cube Consortium (HMCC) today announced they've reached consensus for the global standard that will deliver a much-anticipated, disruptive memory computing solution. Developed in only 17 months, the final specification marks the turning point for designers in a wide range of segments-from networking and high-performance computing, to industrial and beyond-to begin designing Hybrid Memory Cube (HMC) technology into future products.

A major breakthrough with HMC is the long-awaited utilization of advanced technologies to combine highperformance logic with state-of-the-art DRAM. With this first HMC milestone reached so quickly, consortium members have elected to extend their collaborative effort to achieve agreement on the next generation of HMC interface standards.

ADATA Technology, a leading manufacturer of high-performance DRAM modules and NAND Flash storage application products, today announced the launch of the enterprise grade SX1000L solid state drive (SSD). While the company is well-established in the consumer SSD market, this is ADATA's first offering specifically tailored towards server applications.

Taking advantage of its expertise in NAND flash memory technology, ADATA is emphasizing the reliability and performance of the SX1000L. It employs static wear-leveling technology to maximize device mean time between failures (MTBF) to 1,500,000 hours, providing the long-term dependability required by high density computing and heavy load server operations. Available in 2.5" standard SATA form factor, the SX1000L implements advanced controller technology to enhance read/write performance. Sequential read speeds reach 560 MB/sec, and sequential write is as high as 340 MB/sec, with IOPS of 73,000 and 45,000 (Maximum 4K random read and write, respectively).