NVIDIA today announced it is turbocharging the NVIDIA HGX AI supercomputing platform with new technologies that fuse AI with high performance computing, making supercomputing more useful to a growing number of industries.

To accelerate the new era of industrial AI and HPC, NVIDIA has added three key technologies to its HGX platform: the NVIDIA A100 80 GB PCIe GPU, NVIDIA NDR 400G InfiniBand networking, and NVIDIA Magnum IO GPUDirect Storage software. Together, they provide the extreme performance to enable industrial HPC innovation.

Micron, the US-based manufacturer of various kinds of memory technologies, has today announced some quite interesting products at its Computex 2021 keynote. For starters, the company has announced a new portfolio of products based on 176-layer NAND. There are currently two products listed that use this new technology and those are the Micron 3400 and 2450 M.2 NVMe SSDs. Based on the PCIe 4.0 interface, the 2450 SSD lineup is designed as a value-oriented solution that comes in M.2-2280, M.2-2242, and M.2-2230 sizes. It ranges from 256 GB to 1 TB in capacities, which are supposed to be priced as a value purchase.

In a contrast, the 3400 SSD is M.2-2280 design, meant for only the highest performance. The sequential read speeds go up to 6600 MB/s, while the sequential writes go up to 5000 MB/s (in the case of the 2 TB model). Capacities range from 512 GB to 2 TB and only the 1 TB and 2 TB variants have the 5000 MB/s write speeds, while the 512 GB version is capped at 3600 MB/s speed. Both SSD models are featuring a heat spreader on top of NAND chips and spot an in-house and Micron-developed NVMe 1.4 SSD controller. However, Micron does note that the company is free to use any 3rd party SSD controller as we are deep in component shortages with high demand for SSDs. You can get an in-depth look at the 2450 and 3400 M.2 SSDs from Micron's website.

Total NAND Flash revenue for 1Q21 increased by 5.1% QoQ to US$14.82 billion, according to TrendForce's latest investigations. In particular, bit shipments rose by 11% QoQ, while the overall ASP dropped by 5% QoQ; hence, bit shipment growth offset the decline in the overall ASP. Although NAND Flash demand from notebook computer and smartphone manufacturers remained high, clients from the data center segment exhibited relatively weak demand, since this segment had yet to leave the state of NAND Flash oversupply. Contract prices for this quarter therefore still mostly showed a considerable QoQ drop. On the other hand, OEMs/ODMs of end products began to increase procurement of NAND Flash products from the second half of January onward because they noticed that the shortage of NAND Flash controller ICs was affecting the production of medium- and low-density storage products. Besides avoiding a possible supply crunch in the future, OEMs/ODMs were placing additional orders because they were preparing for a push to expand market share. On account of these developments, the overall NAND Flash demand surpassed expectations in 1Q21.

Micron Technology, Inc. (Nasdaq: MU), today announced the successful closing of nearly $3.7 billion inaugural sustainability-linked credit facilities. The facilities, which create additional long-term value for Micron's stakeholders, reinforce the company's commitment to sustainability and 2030 environmental goals.

These facilities comprise a five-year $2.5 billion sustainability-linked revolving credit facility, which matures in May 2026, and a nearly $1.2 billion sustainability-linked term loan A, which matures in October 2024. The credit facility agreements refinance Micron's existing revolving credit and term loan A facilities with no impact to cash or debt balances while reducing future interest expense. Both the revolving credit facility and term loan A feature pricing adjustment mechanisms linking Micron's financial pricing to meeting the environmental targets the company has set for greenhouse gas (GHG) emission intensity, waste diversion from landfills and Responsible Business Alliance (RBA) score metrics. Crédit Agricole Corporate and Investment Bank (CIB) served as the sole sustainability structuring agent on both credit facilities.

This transaction reflects Micron's leadership in sustainable financing and positions the company as a top-five corporate sustainability-linked credit facility issuer in the U.S. while reaffirming Crédit Agricole CIB's role as a strategic investment bank and partner to global companies for sustainability.

As one of the most important tech summits globally, COMPUTEX Forum and its discussion topics have always garnered great attention. To facilitate the discussion on future technology trends, the COMPUTEX Forum on June 2 and 3 will evolve around the theme of "The New Era of Intelligence." TAITRA announced the lineup of speakers to discuss key applications of 5G, AI, IoT, and electric vehicles, deep diving into business strategies in the post-pandemic era.

In the morning of Wednesday, June 2, COMPUTEX Forum will address the topic of "AIoT Evolution." Leading semiconductor giants such as Intel, Micron, NVIDIA and Supermicro, will explore how they accelerate business opportunities in the 5G era. In the afternoon, NXP Semiconductors will kick off the "AI Empowerment" session by sharing its vision and lead the Secure Edge and AI Empowerment discussions in fields. As AI rises in various applications, Arm, Delta Electronics, Micron and Check Point Software will elaborate their latest solution in different scopes.

Netac, a Chinese company based in Shenzen claiming to be the inventor of USB flash drive, has reportedly started the research and development process of DDR5 memory modules that will outperform everything on the market. Netac is rumored to have started the development of DDR5 memory that will have a frequency of over 10,000 MHz. While the JEDEC specification notes that the DDR5 frequency range is between 4800-8400 MHz, manufacturers are always welcome to go over the official specifications. Being that Netac is a relatively new player in the PC memory space, we are wondering how the company plans to execute its plans.

A 10 GHz DDR5 memory would require a very high voltage to run, meaning high heat output. We know that DDR5 chips can run at 2.6 V, according to T-FORCE, who tested such a configuration earlier. The next potential problem would be a platform that could handle 10 GHz DDR5 memory, however, by the time we get this memory in our hands, platforms will mature enough to handle high-speed RAM. The first batch of new DDR5 memory that was sent to Netac was Micron's Z9ZSB modules, which are 2Gx8, CL40 memory modules. They are manufactured in the 1znm memory manufacturing node Micron uses. It is left to be seen what we end up with and if Netac delivers on its promise.

GALAX on Facebook announced that it is developing its next generation of DDR5 memory modules targeted at overclockers. The modules are possibly made under the HOF (Hall of Fame) brand, as the announcement comes from the company's OC Lab handle that markets its HOF series products. The announcement also comes with pictures of trays of DDR5 DRAM chips made by Micron Technology. With major DIY gaming/overclocking memory brands announcing development of DDR5 memory products, one wonders where the platforms for these memory modules are. It's rumored that Intel's upcoming 12th Gen Core "Alder Lake-S" processor in the LGA1700 package could feature a DDR5 memory interface. AMD's first client-desktop platform with DDR5 would see the transition to the new AM5 socket.

Micron Technology, Inc. (Nasdaq: MU) today announced results for its second quarter of fiscal 2021, which ended March 4, 2021. "Micron's strong fiscal second quarter performance reflects rapidly improving market conditions and continued solid execution," said Micron Technology President and CEO Sanjay Mehrotra. "Our technology leadership in both DRAM and NAND places Micron in an excellent position to capitalize on the secular demand driven by AI and 5G, and to deliver new levels of user experience and innovation across the data center and intelligent edge."

We have seen a number of announcements from key industry players about the introduction of DDR5 memory but today's news from Chinese company Jiahe Jinwei marks the beginning of DDR5 mass production. The company announced that DDR5 RAM from Micron had arrived at its facilities and that memory module production could begin. Jiahe Jinwei is the fourth largest memory manufacturer in China and owns memory brands such as Guangwei and Asgard which have recently announced DDR5 modules with capacities of up to 128 GB and speeds reaching 4,800 MHz. Intel is expected to launch their 12th Generation Alder Lake processors later this year with DDR5 support while AMD will introduce support with Zen 4 processors on a new AM5 socket.

Micron and Intel started development on 3D XPoint memory technology back in 2012 and by 2015 Intel had announced their Optane branded lineup of storage products featuring the new memory. Micron estimated that the chips would be sold for half the price of DRAM but five times the cost of flash memory and started limited manufacturing at a jointly owned factory in Lehi, Utah. The new technology was proposed as the future of memory but with Intel being the only major manufacturer of products that dream has not been realized. While the Intel Optane lineup of products has been generally well-received the high-cost and limited use cases have limited its adoption.

Micron has been dissolving its partnership with Intel over the years with their joint 3D XPoint development program ending in 2019 and Micron exercising their right to acquire Intel's share of the factory. This left Intel in the position of purchasing 3D XPoint wafers from Micron for use in their Optane products however this wasn't enough to fully utilize the facilities production and as such Micron has consistently been losing money on the factory. Micron has decided to sell the factory and is now in discussions with potential buyers the most likely being Intel to take over the facility. Intel has announced that their strategy for Optane products will remain the same and that supply will continue.

Global DRAM revenue reached US$17.65 billion, a 1.1% increase YoY, in 4Q20, according to TrendForce's latest investigations. For the most part, this growth took place because Chinese smartphone brands, including Oppo, Vivo, and Xiaomi, expanded their procurement activities for components in order to seize the market shares made available after Huawei was added to the Entity List by the U.S. Department of Commerce. These procurement activities in turn provided upward momentum for DRAM suppliers' bit shipment. However, clients in the server segment were still in the middle of inventory adjustments during this period, thereby placing downward pressure on DRAM prices. As a result, revenues of most DRAM suppliers, except for Micron, remained somewhat unchanged in 4Q20 compared to 3Q20. Micron underwent a noticeable QoQ decline in 4Q20 (which Micron counts as its fiscal 1Q21), since Micron had fewer work weeks during this period compared to the previous quarter.

Crucial, Micron's global consumer brand of memory and storage, today launched an expansion of its award-winning portable solid-state drive (SSD) portfolio to offer consumers more options for external storage performance, capacity and value at any price point. The new products include the high-capacity 4 TB portable SSD at a RRP of 489.95 USD, and a new 500 GB portable SSD for a wallet-friendly RRP of 69.95 USD. Consumers looking to store large gaming libraries or more movies for long road trips will find an ideal solution in the Crucial X6.

With read speeds up to 800 MB/s, the 4 TB drive performs up to 5.6 times faster than portable hard drives in the market and are drop-proof up to 6.5 feet. Similar to the existing products in the Crucial X6 portable SSD lineup, the 4 TB and 500 GB versions deliver compact portable SSDs in these capacities to consumers for the first time. The entire award-winning Crucial portable SSD product line is compatible with the latest USB-C-enabled devices, such as PCs, Macs, PlayStation 5, Android devices and more. When used with the Crucial USB-C to USB-A adapter, the portable drives also work with PS4, Xbox One, XBOX Series S|X and other USB-A devices.

Micron Technology, Inc. today announced that it has begun sampling the industry's first automotive low-power DDR5 DRAM (LPDDR5) memory that is hardware-evaluated to meet the most stringent Automotive Safety Integrity Level (ASIL), ASIL D. The solution is part of Micron's new portfolio of memory and storage products targeted for automotive functional safety based on the International Organization for Standardization (ISO) 26262 standard.

Micron's functional safety-evaluated DRAM is compatible with advanced-driver assistance system (ADAS) technologies, including adaptive cruise control, automatic emergency braking systems, lane departure warning and blind spot detection systems. Micron's LPDDR5's high performance, superior power efficiency and low latency provide the requisite performance and headroom to keep pace with increasing bandwidth requirements of next-generation automotive systems.

"Autonomous vehicles promise to make our roads safer, but they need powerful, trusted memory that can enable real-time decision-making in extreme environments," said Kris Baxter, corporate vice president and general manager of Micron's Embedded Business Unit. "To fulfill this growing market need, we've optimized our automotive LPDDR5 to deliver the utmost performance, quality and reliability for the smart, safe cars of tomorrow."

Driven by such factors as the continued development of autonomous driving technologies and the build-out of 5G infrastructure, the demand for automotive memories will undergo a rapid growth going forward, according to TrendForce's latest investigations. Take Tesla, which is the automotive industry leader in the application of autonomous vehicle technologies, as an example. Tesla has adopted GDDR5 DRAM products from the Model S and X onward because it has also adopted Nvidia's solutions for CPU and GPU. The GDDR5 series had the highest bandwidth at the time to complement these processors. The DRAM content has therefore reached at least 8 GB for vehicles across all model series under Tesla. The Model 3 is further equipped with 14 GB of DRAM, and the next-generation of Tesla vehicles will have 20 GB. If content per box is used as a reference for comparison, then Tesla far surpasses manufacturers of PCs and smartphones in DRAM consumption. TrendForce forecasts that the average DRAM content of cars will continue to grow in the next three years, with a CAGR of more than 30% for the period.

NAND Flash demand continues to rise as strong sales of notebook (laptop) computers spur PC OEMs to place additional orders for client SSDs, according to TrendForce's latest investigations. Also, the supply-side inventory for NAND Flash memory has already fallen considerably due to the aggressive stock-up activities of some smartphone brands. With customers in the data center segment expected to ramp up procurement in 2Q21, NAND Flash suppliers have decided to scale back the supply of NAND Flash wafers. Compared with other product categories, wafers have a lower gross margin. As a result of these factors, the decline in contract prices of wafers has been easing over the past two months (i.e., from December of last year to January of this year).

Yes, you are reading that title correctly. Today we got ahold of information that DDR3 prices are going to skyrocket by as much as 40-50% this year! Despite DDR4 being present for seven years (since 2014), which is a lot in the world of tech, DDR3 is still thriving. Used in a wide range of devices like IoT, older servers, and long time running machines that need maintenance for decades. The DDR3 has been manufactured by SK Hynix, Samsung, and Micron, however, as technology moved on, these companies began the migration to the newer DDR4 standard. Even DDR5 exists today and it is currently manufactured.

So why is DDR3 soaring in value? It is because of the increased scarcity of this memory. SK Hynix has stopped the production of 2 Gb modules, leaving only the 4 Gb modules in production. Samsung has cut down the capacity from 60,000 wafers of DDR3 memory modules per month to just 20,000. This has caused the price of 2 Gb and 4 Gb modules to rise already as much as 30%. Despite the age of 14 years, DDR3 is still widely used in many systems. And because of that, the scarcity is making the price of the current memory increase. The price is expected to rise through the whole year and it could reach a 50% increase.

Micron Technology, Inc., today announced volume shipment of 1α (1-alpha) node DRAM products built using the world's most advanced DRAM process technology and offering major improvements in bit density, power and performance. This milestone reinforces Micron's competitive strength and complements its recent breakthroughs with the world's fastest graphics memory and the first-to-ship 176-layer NAND.

"This 1α node achievement confirms Micron's excellence in DRAM and is a direct result of Micron's relentless commitment to cutting-edge design and technology," said Scott DeBoer, executive vice president of technology and products at Micron. "With a 40% improvement in memory density over our previous 1z DRAM node, this advancement will create a solid foundation for future product and memory innovation."

Micron plans to integrate the 1α node across its DRAM product portfolio this year to support all environments that use DRAM today. The applications for this new DRAM technology are extensive and far reaching—enhancing performance in everything from mobile devices to smart vehicles.

PC enthusiast VIK-on pulled off a sophisticated memory mod for the GeForce RTX 2070, doubling its memory amount to 16 GB. In a detailed video presentation (linked below), VIK-on demonstrated how he carefully removed the 8 Gb Micron-made GDDR6 memory chips of his card, with 16 Gb Samsung-made chips he bought off AliExpress for $200. Memory replacement mods are extremely difficult to pull off, as you first de-solder the existing chips using a hot air gun while keeping the contacts on the PCB intact (ensuring no pins short); and solder the replacement BGA memory chips in place.

In addition, a set of "jumpers" on the PCB need to be modified to make it recognize the Samsung memory. The resulting card booted to desktop successfully, with GPU-Z reading its full 16 GB memory size. The card successfully made it through 3DMark TimeSpy, albeit with 30% lower performance than a normal RTX 2070 (6176 points vs. ~9107 points). The card would also crash Furmark. Still, it's mighty impressive that the "TU106" recognizes 16 GB of addressable memory (which means all its memory channels are intact), without the need for any BIOS mods, which is impossible to pull off.Watch the VIK-on video presentation here.

Research and development spending by semiconductor companies worldwide is forecast to grow 4% in 2021 to $71.4 billion after rising 5% in 2020 to a record high of $68.4 billion, according to IC Insights' new 2021 edition of The McClean Report—A Complete Analysis and Forecast of the Integrated Circuit Industry. Total R&D spending by semiconductor companies is expected to rise by a compound annual growth rate (CAGR) of 5.8% between 2021 and 2025 to $89.3 billion.

When the world was hit by the Covid-19 virus health crisis in 2020, wary semiconductor suppliers kept a lid on R&D spending increases, even though total semiconductor industry revenue grew by a surprising 8% in the year despite the economic fallout from the deadly pandemic. Semiconductor R&D expenditures as a percentage of worldwide industry sales slipped to 14.2% in 2020 compared to 14.6% in 2019, when research and development spending declined 1% and total semiconductor revenue fell 12%. Figure 1 plots semiconductor R&D spending levels and the spending-to-sales ratios over the past two decades and IC Insights' forecast through 2025.

Micron Technology, Inc. (Nasdaq: MU) today announced results for its first quarter of fiscal 2021, which ended Dec. 3, 2020. "Micron delivered outstanding fiscal first quarter results, driven by focused execution and strong end-market demand," said Micron Technology President and CEO Sanjay Mehrotra. "We are excited about the strengthening DRAM industry fundamentals. For the first time in our history, Micron is simultaneously leading on DRAM and NAND technologies, and we are in an excellent position to benefit from accelerating digital transformation of the global economy fueled by AI, 5G, cloud, and the intelligent edge."

The DRAM market exhibits a healthier and more balanced supply/demand relationship compared with the NAND Flash market because of its oligopolistic structure, according to TrendForce's latest investigations. The percentage distribution of DRAM supply bits by application currently shows that PC DRAM accounts for 13%, server DRAM 34%, mobile DRAM 40%, graphics DRAM 5%, and consumer DRAM (or specialty DRAM) 8%. Looking ahead to 1Q21, the DRAM market by then will have gone through an inventory adjustment period of slightly more than two quarters. Memory buyers will also be more willing to stock up because they want to reduce the risk of future price hikes. Therefore, DRAM prices on the whole will be constrained from falling further. The overall ASP of DRAM products is now forecasted to stay generally flat or slightly up for 1Q21.

Semiconductor manufacturing is a risky business. Not only is it heavily capital-intensive, which means that even some state-backed would-be players can fail in pooling together the required resources for an industry break-in; but the entire nature of the manufacturing process is a delicate balance of materials, nearly-endless fabrication, cleanup, and QA testing. Wafer manufacturing can take months between the initial fabrication stages through to the final packaging process; and this means that power outages or material contamination can jeopardize an outrageous number of in-fabrication semiconductors.

Recent news as covered by DigiTimes place one of Micron's fabrication plants in Taiwan as being hit with a 1-hour long power outage, which can potentially affect 10% of the entire predictable DRAM supply for the coming months (a power outage affects every step of the manufacturing process). Considering the increased demand for DRAM components due to the COVID-19 pandemic and associated demand for DRAM-inside products such as PCs, DIY DRAM, laptops, and tablets, industry players are now expecting a price hike for DRAM throughout 2021 until this sudden supply constraint is dealt with. As we know, DRAM manufacturers and resellers are a fickle bunch when it comes to increasing prices in even the slightest, dream-like hint of reduced supply. It remains to be seen how much of this 10% DRAM supply is actually salvageable, but projecting from past experience, a price hike seems to be all but guaranteed.

Total NAND Flash revenue reached US$14.5 billion in 3Q20, a 0.3% increase QoQ, while total NAND Flash bit shipment rose by 9% QoQ, but the ASP fell by 9% QoQ, according to TrendForce's latest investigations. The market situation in 3Q20 can be attributed to the rising demand from the consumer electronics end as well as the recovering smartphone demand before the year-end peak sales season. Notably, in the PC market, the rise of distance education contributed to the growing number and scale of Chromebook tenders, but the increase in the demand for Chromebook devices has not led to a significant increase in NAND Flash consumption because storage capacity is rather limited for this kind of notebook computer. Moreover, clients in the server and data center segments had aggressively stocked up on components and server barebones during 2Q20 due to worries about the impact of the pandemic on the supply chain. Hence, their inventories reached a fairly high level by 3Q20. Clients are now under pressure to control and reduce their inventories during this second half of the year. With them scaling back procurement, the overall NAND Flash demand has also weakened, leading to a downward turn in the contract prices of most NAND Flash products.

Micron today announced that it has begun volume shipments of the world's first 176-layer 3D NAND flash memory, achieving unprecedented, industry-pioneering density and performance. Together, Micron's new 176-layer technology and advanced architecture represent a radical breakthrough, enabling immense gains in application performance across a range of storage use cases spanning data center, intelligent edge and mobile devices.

"Micron's 176-layer NAND sets a new bar for the industry, with a layer count that is almost 40% higher than our nearest competitor's," said Scott DeBoer, executive vice president of technology and products at Micron. "Combined with Micron's CMOS-under-array architecture, this technology sustains Micron's industry cost leadership."

Taiwanese corporation United Micro Electronics (UMC) has pled guilty on charges of trade theft. The charges, originally pressed in November 2018 by US authorities, placed UMC and China's Fujian Jinhua in hot waters under suspicion of stealing trade secrets from US-based Micron technologies, one of the world's foremost players in memory semiconductor technologies. UMC's guilty plea serves as a way for the company to avoid heavier penalties, and includes a provision for the company's assistance in investigating Fujian Jinhua's actions in regards to this IP theft.

The whole story revolves around UMC's hiring of three Micron employees from Micron's subsidiary in Taiwan, Micron Memory Taiwan (MMT), back around September 2015. At least two of these employees migrated Micron trade secrets to UMC, which then inked a deal with china's Fujian Jinhua for the development of 32nm DRAM and "32Snm" DRAM technologies that Fujian Jinhua could then deploy for the manufacture of memory products - a deal which had Fujian Jinhua paying $300 million for equipment purchase plus $400 million for technology development to UMC. This all fell in line with the Chinese government's Made in China 2025 plan, which aims to bring the country to semiconductor independence from the western world. UMC says that the company itself didn't partake in the underhanded IP delivery to Fujian Jinhua, claiming instead that rogue employees did so of their own volition. The company further states that it only pleads guilty because according to the US Trade Secrets Act, the company still bears legal responsibilities for employee acts, whether or not top management is involved.