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SK Hynix to Ship HBM2 Memory by Q3-2016

Korean memory and NAND flash giant SK Hynix announced that it will have HBM2 memory ready for order within Q3-2016 (July-September). The company will ship 4 gigabyte HBM2 stacks in the 4 Hi-stack (4-die stack) form-factor, in two speeds - 2.00 Gbps (256 GB/s per stack), bearing model number H5VR32ESM4H-20C; and 1.60 Gbps (204 GB/s per stack), bearing model number H5VR32ESM4H-12C. With four such stacks, graphics cards over a 4096-bit HBM2 interface, graphics cards with 16 GB of total memory can be built.


Source: SK Hynix Q3 Catalog

SK Hynix to Ship 4GB HBM2 Stacks by Q3-2016

Korean DRAM and NAND flash giant SK Hynix will be ready to ship its 4 GB stacked second generation high-bandwidth memory (HBM2) chips from Q3, 2016. These packages will be made up of four 1 GB dies, with a bandwidth-per-pin of 1 Gbps, 1.6 Gbps, and 2 Gbps, working out to per-stack bandwidths of 128 GB/s, 204 GB/s, and 256 GB/s, respectively.

These chips will target applications such as graphics cards, network infrastructure, HPC, and servers. The company is also designing 8 GB stacks, made up of eight 1 GB dies. These stacks will be targeted at HPC and server applications. The company is also offering cost-effective 2 GB, 2-die stacks, for graphics cards. The cost-effective 2 GB, 2-die stacks could prove particularly important for the standard's competition against GDDR5X, particularly in mid-range and performance-segment graphics cards.

Source: Golem.de

AMD Showcases Graphics, Energy Efficient Computing and Die-Stacking Innovation

Top technologists from AMD are detailing the engineering accomplishments behind the performance and energy efficiency of the new high-performance Accelerated Processing Unit (APU), codenamed "Carrizo," and the new AMD Radeon R9 Fury family of GPUs, codenamed "Fiji," at the prestigious annual Hot Chips symposium starting today. The presentations will focus on new details of the high-definition video and graphics processing engines on the 6th Generation AMD A-Series APU ("Carrizo"), and the eight year journey leading to die-stacking technology and all-new memory architecture included on the latest top-of-the-line AMD Radeon Fury Series GPUs ("Fiji") for 4K gaming and VR. Using a true System-on-Chip (SoC) design, 6th Generation AMD A-Series processors are designed to reduce the power consumed by the x86 cores alone by 40 percent, while providing substantial gains in CPU, graphics, and multimedia performance versus the prior generation APU. The new AMD Radeon R9 Fury X GPU achieves up to 1.5x the performance-per-watt of the previous high-end GPU from AMD.

"With our new generation of APU and GPU technology, our engineering teams left no stone unturned for performance and energy efficiency," said Mark Papermaster, chief technology officer at AMD. "Using innovative design for our APUs, we've vastly increased the number of transistors on-chip to increase functionality and performance, implemented advanced power management, and completed the hardware implementation of Heterogeneous System Architecture. For our latest GPUs, AMD is the first to introduce breakthrough technology in the form of die-stacking and High-Bandwidth Memory. The results are great products with very large generational performance-per-watt gains."

SanDisk and SK Hynix Settle IP Litigation

SanDisk Corporation, a global leader in flash storage solutions, today announced it has reached agreement with SK Hynix, Inc. to modify and extend their intellectual property licensing relationship and enter into a multi-year commercial relationship under which SK Hynix will supply its leading-edge DRAM products to SanDisk. These agreements include a settlement of the trade secret misappropriation suit filed by SanDisk in 2014.

Under these agreements, which will expire on March 31, 2023, SanDisk will release SK Hynix of its liability pertaining to the trade secret litigation and license certain intellectual property rights to SK Hynix in exchange for license and royalty payments to be made over the duration of the agreement. In addition, SK Hynix has agreed to supply SanDisk with certain volumes of its DRAM products for MCP and SSD applications. The specific terms and conditions of the agreements, including with respect to economic consideration, are confidential.

SK Hynix Launches In-house UFS 2.0 Solution

SK Hynix Inc. announced it has developed UFS (Universal Flash Storage) 2.0 64 GB (Gigabytes) solution based on its own 16 nm NAND Flash and in-house firmware and controller. This UFS 2.0 represents a groundbreaking leap in performance by enabling High-Speed Gear 3 interface with dual data lanes.

UFS 2.0 is the next generation of embedded flash memory to eMMC for mobile IT gadgets which drives a remarkable boost in reading/writing speed at low power and supports high density. The Company's UFS 2.0 operates at 780 MB/s(Megabytes per second) and 160 MB/s of sequential read/write speed and runs random read/write speed at 32,000 IOPS and 17,000 IOPS. As a result, it works three times faster in read speed than eMMC 5.1.

In addition, this UFS 2.0 utilizes 'Command Queue' technology used in SSD solutions to handle read and write commands simultaneously to achieve data operation efficiency by preventing buffering load in multi-tasking and ordering priorities of data works. To maximize prioritized command processing feature of UFS standard, the device employs 'Multi-Thread' read processing internally to ensure that high priority command is serviced first irrespective of other outstanding tasks, delivering fast response to time-critical host requests for best user experience. In consequence, it realizes even better performance in speed and power consumption over eMMC.

Micron Begins Shipping its First 20 nm-class GDDR5 DRAM Chips

Micron Technology announced during its Q3 FY-2015 earnings call, that it began shipping GDDR5 memory chips based on its 20 nm-class node. The company is reportedly shipping 8 Gb (1 gigabyte) GDDR5 memory chips. The company was last reported to be acquiring Japanese DRAM major Elpida, which also supplies GDDR5 chips to graphics cards, notebooks, and game console makers. The GDDR5 memory space has been saturated by companies such as Samsung and SK Hynix. The memory standard itself is on the brink of becoming obsolete; with AMD implementing HBM on its new high-end GPU, and NVIDIA expected to implement HBM with its upcoming "Pascal" GPU family. There is still quite a few GDDR5-equipped graphics cards to be sold, before HBM takes over GPUs of all market segments.

Source: Kitguru

KLEVV High Performance Gaming Memory Modules Now Available in Europe

Essencore Limited, a noteworthy newcomer in DRAM modules and NAND Flash application products including Gaming Memory Modules, Solid State Drives, USB Flash Drives and MicroSD cards, is pleased to announce the sales kick-off in European countries with its brand "KLEVV". In attempt to expand its global presence and to accelerate growth, Essencore hopes that this KLEVV product launch will help to efficiently deliver its premium products to its European customer.

As a young company founded in 2014 by CEO IU Kim, Essencore strives to become world's leading vendor of both DRAM modules and NAND Flash application products. To achieve this goal, Essencore has introduced its house brand "KLEVV" with the industry's first-rate quality and best performing products. In a conscious move to strengthen brand awareness and products at this early stage, KLEVV will focus on the three key consumer markets of U.S., Europe and China. Of all regions, Europe is deemed to have the highest potential, with its huge population of tech enthusiasts. Starting in Germany, UK, and Poland in summer 2015, KLEVV products will soon be available in all corners of Europe.

AMD "Fiji" HBM Implementation Detailed

Back in 2008, when it looked like NVIDIA owned the GPU market, and AMD seemed lagging behind on the performance and efficiency game, the company sprung a surprise. The company's RV770 silicon, the first GPU to implement GDDR5 memory, trounced NVIDIA's big and inefficient GeForce GTX 200 series, and threw AMD back in the game. GDDR5 helped the company double the memory bandwidth, with lower pin- and memory-chip counts, letting the company and its partners build graphics cards with fewer components, and earn great margins, which the company invested in development of its even better HD 5000 series, that pushed NVIDIA with its comical GeForce GTX 480, to hit its lowest ever in market-share. Could AMD be looking at a similar turnaround this summer?

Since the introduction of its Graphics CoreNext architecture in 2012, AMD has been rather laxed in its product development cycle. The company has come out with a new high-end silicon every 18-24 months, and adopted a strategy of cascading re-branding. The introduction of each new high-end silicon would relegate the existing high-end silicon to the performance segment re-branded, and the existing performance-segment silicon to mid-range, re-branded. While the company could lay out its upcoming Radeon R9 series much in the same way, with the introduction of essentially just one new silicon, "Fiji," it could just prove enough for the company. Much like RV770, "Fiji" is about to bring something that could prove to be a very big feature to the consumer graphics market, stacked high-bandwidth memory (HBM).

LiteOn Intros ZETA Series Consumer SSDs

An OEM for notable SSD brands such as Plextor, LiteOn kicked off its own consumer SSD line, with ZETA. Built in the 7 mm thick, 2.5-inch form-factor, with SATA 6 Gb/s interface, these drives come in three capacities, 128 GB (LCH-128V2S), 256 GB (LCH-256V2S), and 512 GB (LCH-512V2S), featuring LPDDR3 controller cache of 128 MB, 256 MB, and 512 MB, respectively. The drive is based on Silicon Motion SM2246EN controller, with 16 nm MLC NAND flash, made by SK Hynix.

All three capacities offer sequential read speeds of up to 520 MB/s, differing with sequential write speeds. The 128 GB variant offers up to 150 MB/s writes, the 256 GB variant offers up to 260 MB/s, and the 512 GB variant up to 430 MB/s. Their 4K random-access read speeds are up to 67,500 IOPS, up to 82,500 IOPS, and up to 83,500 IOPS, respectively; and random-access write speeds are up to 37,500 IOPS, up to 72,500 IOPS, and up to 80,000 IOPS, respectively. Most common client SSD features, such as TRIM, NCQ, and 256-bit AES native encryption, are part of the package. LiteOn didn't announce pricing information for markets outside the Greater China region, where the drives will make their debut.

Source: Expreview

Century Micro Launches First Low-profile DDR4 DIMM

Japanese company Century Micro launched the world's first low-profile (half-height) DDR4 DIMM (model: CK4GX4-D4RE2133VL81). With a module height of just 1.87 cm, the 4 GB module uses DRAM chips made by SK Hynix, and offers JEDEC-specified DDR4-2133 MHz speeds, with 15-15-15 timings, and 1.2V DRAM voltage. It sells in 16 GB kits of four modules, which sells at 51,980 JPY (US $428), including taxes.

Source: Akiba PC Watch

SK Hynix Developed the World's Highest Density 16 GB NVDIMM

SK Hynix Inc. announced that it has developed the world's highest density 16 GB (Gigabytes) of NVDIMM (Non Volatile DIMM) based on 4 Gb (Gigabit) DDR4 using its advanced 20 nm class technology.

This NVDIMM is able to send DRAM data to NAND Flash whose density is two times bigger than the DRAM in a unanticipated power loss by combining DRAM, NAND Flash and the module controller in a single module. Therefore, it is feasible to save and restore data safely as well as performing on the same level with general DDR4 modules. This new product works at 2133 Mbps and with a 64-bit I/O it processes up to 17 GB of data per second running at 1.2V.

Century Micro Unveils Entry-level DDR4 ECC Registered Memory Modules

Japanese memory maker Century Micro announced its entry-level DDR4 ECC registered memory modules. Compatible with Intel Xeon E5-2600 v3 and Core i7-5000 HEDT processors, the modules come in density of 8 GB (model: CD8G-D4RE2133L82), making up single-module and four-module (32 GB) kits. The CD8G-D4RE2133L82 complies with JEDEC specifications, and runs at DDR4-2133 MHz speeds, with a module voltage of 1.2V, and timings of 15-15-15. The module features an 8-layer PCB, and appears to use DRAM chips made by SK Hynix. The modules will start selling in a couple of weeks from now.

ADATA Premier DDR4 Memory Modules Spotted in Stores

Wanna build a Haswell-E HEDT build on the "cheap?" Then this could make it to your list. ADATA is ready with its no-frills Premier line of DDR4 memory modules, which are sold in single-module packs of 4 GB and 8 GB. The modules stick to JEDEC specifications of DDR4-2133 MHz (PC4-17000), with CAS latencies of 15T, and voltage of 1.2 Volt. The modules use DRAM chips made by SK Hynix. Inclusive of all taxes, the 4 GB module is priced at the equivalent of $75 USD in Japan; and the 8 GB module goes for the equivalent of $150.


Source: Akiba PC Watch

NAND Flash Brand Supplier Revenue Falls 6.6% in First Quarter

The shipment performances of Smartphones, Tablets, and Notebooks were relatively weak in the first quarter due to seasonality. As a result of the entire NAND Flash market's oversupply in 1Q 2014, the branded suppliers' Q1 revenues saw a 6.6% drop compared to the previous quarter, and slid to approximately US$ 7,244 million, according to Sean Yang, Assistant Vice President at DRAMeXchange, the memory and storage research division of TrendForce.

Looking at the branded supplier revenue ranking, Samsung managed to retain its lead in the market with approximately US$ 2,175 million in sales, but saw its market share dip slightly to 30.0%; Toshiba came in second with a revenue total of US$ 1,548 million and an improved market share of 21.4%; SanDisk ended up in third place with US$ 1,367 million in revenue, while Micron came in fourth with US$ 1,050 million; Affected by its capacity allocations, SK Hynix's revenues slid to approximately US$ 594 million, resulting in market share of 8.2%.

Violin Memory to Sell Its PCIe Product Line to SK hynix

Violin Memory, Inc., a leading provider of all-flash storage arrays and appliances delivering application solutions for the enterprise, today announced that it has entered into a definitive agreement to sell its PCIe product line to SK hynix Inc. for approximately $23 million in cash and the assumption of certain liabilities totaling $0.5 million. This sale is consistent with the Company's previously announced plan to review strategic alternatives for its PCIe flash memory card business in order to focus on markets where Violin has proven technology leadership and significant growth opportunities.

The sale of the PCIe product line will include its Velocity PCIe card family, consisting of PCIe-related intellectual property, and certain fixed assets. Under the agreement, SK hynix will extend offers of employment to members of the PCIe development team. The purchase price is subject to a downward adjustment to the extent certain conditions are not satisfied. Closing of the transaction, which is subject to customary closing conditions, is expected to occur by the end of June.

SK Hynix Developed the World's First Highest Density 128 GB DDR4 Module

SK Hynix Inc. announced that it has developed the world's first highest density of 128 GB (Gigabytes) module based on 8 Gb(Gigabit) DDR4 using its advanced 20 nm class technology.

This module has double density compared to existing 64 GB by taking advantage of TSV(Through Silicon Via) technology. This new product works at 2133 Mbps and with a 64-bit I/O it processes up to 17 GB of data per second. It also runs at ultra low-voltage of 1.2V which does at lower voltage than 1.35V of existing DDR3.

SanDisk Files Lawsuit Against SK Hynix for Theft of Trade Secrets

SanDisk Corporation, a global leader in flash storage solutions, today announced that it has filed a civil lawsuit against Korea's SK Hynix, Inc., SK Hynix America and related entities in Santa Clara Superior Court. The lawsuit seeks damages, an injunction and other remedies against Hynix for trade secret misappropriation under California's Uniform Trade Secret Act. Additionally, SanDisk has submitted a criminal complaint with the Tokyo Metropolitan Police Department against a former employee.

These actions relate to the theft of trade secrets related to NAND flash technology by a former engineer of SanDisk who left the company in 2008 to work for SK Hynix. This engineer is alleged to have illegally taken SanDisk's proprietary technical information and to have subsequently provided it to SK Hynix. Tokyo Metropolitan Police today announced the arrest of the former employee, who worked at SanDisk's joint venture manufacturing facility in Yokkaichi, Japan. SanDisk has been and continues to cooperate with law enforcement in their investigation.

Toshiba Sues SK Hynix

Toshiba Corporation today announced that it has brought a civil suit against Korea's SK Hynix Inc. at the Tokyo District Court, under Japan's Unfair Competition Prevention Act. The suit seeks damages for the wrongful acquisition and use of Toshiba's proprietary technical information related to NAND flash memory, which Toshiba pioneered in 1987 and now jointly develops and produces with SanDisk Corporation of the U.S.

Toshiba filed the suit on learning that a former employee of SK Hynix has been arrested in Japan for alleged criminal infringement of the Unfair Competition Prevention Act. The employee formerly worked for SanDisk in a NAND flash memory development project conducted in partnership with Toshiba at Yokkaichi Operations, Toshiba's flash memory technology development and mass production base in Mie prefecture, Japan. The employee is alleged to have illegally taken Toshiba's proprietary technical information in 2008, and to have subsequently provided it to SK Hynix.

SK Hynix Develops 8 Gb LPDDR4 Memory

SK Hynix Inc. announced that it has developed the world's first 8 Gb (Gigabit) LPDDR4 (Low Power DDR4) using its advanced 20 nm class technology. LPDDR4 is the next generation mobile DRAM interface on the process of standardization which features ultrahigh speed and low power consumption.

This new product works at 3200 Mbps and ultra low-voltage of 1.1V which runs two times faster than 1600 Mbps and does at lower voltage than 1.2V of existing LPDDR3. The Company has been strengthening its cooperation with the customers for the standardization of this new mobile DRAM by providing the samples of LPDDR4 to major customers and SoC(System on Chip) companies.

PowerColor Radeon R9 290X PCS+ Unveiled

PowerColor may have been the first AMD add-in board vendor to launch a custom-design Radeon R9 290X graphics card with its R9 290X LCS, which is basically an AMD reference PCB with a factory-fitted EKWB FC-R9-290X water-block; but its air-cooled non-reference cards have been nowhere in sight, until now. PowerColor posted these pictures of the Radeon R9 290X PCS+, its premium factory-overclocked and air-cooled graphics card based on AMD's flagship GPU. The company's Radeon R9 290 (non-X) PCS+ is expected to look identical.

Pictures reveal the card's PCB to be largely based on AMD's reference design, perhaps with variations on the choice of components. PowerColor has a knack of splurging on expensive, high-quality components on its PCBs (think International Rectifier and Coilworks VRM components, Samsung and SK Hynix memory chips, etc.), and we expect a similar treatment for the R9 290X PCS+. The two-slot cooling solution featured on this card is making its debut with it. It features a network of aluminium fin stacks to which heat is fed by copper heat pipes, and which are ventilated by a trio of 80 mm fans. PowerColor didn't reveal clock speeds, launch date, or pricing.

MSI Radeon R9 290 Series Gaming PCB Pictured

Here's the first picture of the PCB under the hood of MSI's Radeon R9 290X Gaming OC graphics card, which was unveiled in Japan, over the weekend, and which was detailed in a slightly older article. It turns out that MSI will use the same board design (including the back-plate) on both the R9 290X Gaming OC and the R9 290 Gaming OC, both of which have been put up for pre-order by Canadian e-tailer NCIX. The R9 290X Gaming OC is priced at $699 CAD including taxes (US $660); while the R9 290 Gaming OC is priced at $529.99 CAD including taxes (US $500).

The PCB itself is a slight variation of MSI on AMD's reference design. The layout is identical, but there are subtle differences in component choices MSI made. For example, it ditches Coiltronics-made chokes for MagicTech. Appears to use SK Hynix made memory chips (instead of Elpida on a vast majority of retail R9 290 series boards), etc. It also appears to retain dual-BIOS. According to NCIX, both cards will feature untouched memory clock speeds of 5.00 GHz, yielding memory bandwidth of 320 GB/s, but feature 5-7 percent overclocks on the GPU. The R9 290 Gaming OC features GPU clock speeds (possibly PowerTune boost) of up to 1000 MHz (vs. 948 MHz reference), while the R9 290X Gaming OC features 1040 MHz.

SK Hynix Started Full-Scale Mass Production of 16 nm NAND Flash

SK Hynix Inc. announced that it has started full-scale mass production of 16 nm 64 Gb (Gigabit) MLC (Multi Level Cell) NAND Flash, which uses the industry's thinnest process technology.

SK Hynix has been mass producing its 1st version of the world's first 16 nm NAND Flash since June and recently has started to mass produce the 2nd version which is more cost competitive due to its smaller chip size. In consequence, the Company geared up for strengthening its competitiveness in NAND Flash.

SK Hynix Develops Industry-Leading 6 Gb LPDDR3 Memory

SK Hynix Inc. announced that it has developed 6 Gb (Gigabit) LPDDR3 (Low Power DDR3) using its 20 nm class process technology. This product is a high-performance mobile memory solution that features low power consumption and high-density, which is ideal for next generation premium mobile devices.

Four 6 Gb LPDDR3 products can be stacked up and realize a high density of maximum 3 GB (Gigabytes, 24 Gb) solution in a single package. In consequence, this package reduces the operating power as well as the standby current by 30% and the height of the package becomes thin compared to the Company's 4 Gb-based one. In addition, it works at ultra low-voltage of 1.2V thus it satisfies low power consumption which mobile applications demand.

SK Hynix Established Flash R&D Center in Taiwan

SK Hynix Inc. announced it established a research and development (or 'R&D') center 'SK Hynix Flash Solutions Taiwan Ltd.'. The Company will strengthen global R&D competence and customer support by adding the R&D center in Taiwan.

The Taiwan R&D center will focus on intensifying its competence in development of high value added NAND Flash memory products. The center is located in Hsinchu, the hub of Taiwan IT industry, so it is expected to become a base of the technology support for Chinese and Taiwanese clients.

Massive Fire at SK Hynix Facility in Wuxi, China

A massive fire broke out this afternoon (local time), at a SK Hynix production facility in Wuxi, China. At this moment, pictures and videos of the fire are swarming through local social networks, and there are no official announcements by either the local authorities, or the company itself. Incidentally, this isn't the first fire accident at an SK Hynix manufacturing facility, a Korea-based fab suffered one in February 2008. The facility hit by fire is rumored to be one that handles packaging (placing bumped dies inside ceramic or plastic shells, and labeling them). If the extant of damage to the facility is high, it might affect NAND flash prices more than DRAM, since the company recently prioritized NAND flash over DRAM for the facility.

Source: ChipHell Forums
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