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Crucial MX500 1 TB (Micron B17A)

1 TB
Capacity
SM2258H
Controller
TLC
Flash
SATA 6 Gbps
Interface
2.5"
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

SSD Controller
Controller
NAND Die
NAND Die
The Crucial MX500 is a solid-state drive in the 2.5" form factor, launched in January 2018. It is available in capacities ranging from 250 GB to 2 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Crucial MX500 interfaces using a SATA 6 Gbps connection. The SSD controller is the SM2258H from Silicon Motion, a DRAM cache chip is available. Crucial has installed 64-layer TLC NAND flash on the MX500, the flash chips are made by Micron. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are handled more quickly. The MX500 is rated for sequential read speeds of up to 560 MB/s and 510 MB/s write; random IO reaches 95K IOPS for read and 90K for writes.
At its launch, the SSD was priced at 260 USD. The warranty length is set to five years, which is an excellent warranty period. Crucial guarantees an endurance rating of 360 TBW, a relatively low value compared to other SSDs.

Solid-State-Drive

Capacity: 1 TB (1000 GB)
Variants: 250 GB 500 GB 1 TB 2 TB
Hardware Versions:
Overprovisioning: 92.7 GB / 10.0 %
Production: Active
Released: Jan 2018
Price at Launch: 260 USD
Part Number: CT1000MX500SSD1
Market: Consumer

Physical

Form Factor: 2.5"
Interface: SATA 6 Gbps
Protocol: AHCI
Power Draw: 0.07 W (Idle)
Unknown (Avg)
Unknown (Max)

Controller

Manufacturer: Silicon Motion
Name: SM2258H
Architecture: ARC
Core Count: Single-Core
Frequency: 400 MHz
Foundry: TSMC
Process: 40 nm
Flash Channels: 4
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Micron
Name: B17A FortisFlash
Type: TLC
Technology: 64-layer
Speed: 50 MT/s .. 667 MT/s
Capacity: 4 chips @ 2 Tbit
ONFI: 4.0
Topology: Floating Gate
Process: 16 nm
Die Size: 108 mm²
(4.7 Gbit/mm²)
Dies per Chip: 4 dies @ 512 Gbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 74 per NAND String
86.5% Vertical Efficiency
Read Time (tR): 88 µs
Program Time (tProg): 930 µs
Block Erase Time (tBERS): 15 ms
Die Read Speed: 727 MB/s
Die Write Speed: 69 MB/s
Endurance:
(up to)
3000 P/E Cycles
(40000 in SLC Mode)
Page Size: 16 KB
Block Size: 2304 Pages
Plane Size: 504 Blocks

DRAM Cache

Type: DDR3
Capacity: 1024 MB
(2x 512 MB)
Organization: 4Gx16

Performance

Sequential Read: 560 MB/s
Sequential Write: 510 MB/s
Random Read: 95,000 IOPS
Random Write: 90,000 IOPS
Endurance: 360 TBW
Warranty: 5 Years
MTBF: 1.8 Million Hours
Drive Writes Per Day (DWPD): 0.2
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
RGB Lighting: No
PS5 Compatible: No

Notes

NAND Die:

tPROG with some Overhead: ~ 930µs (Avg)
Effective Program page time without VPP : 1900μs(TYP) ( ~ 33 MB/s)

Dec 13th, 2024 05:21 CST change timezone

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