Capacity: | 2 TB (2048 GB) |
---|---|
Variants: | 512 GB 1 TB 2 TB |
Overprovisioning: | 140.7 GB / 7.4 % |
Production: | End-of-life |
Released: | Aug 9th, 2018 |
Price at Launch: | 204 USD |
Part Number: | SSDPEKNW020T8X1 |
Market: | Consumer |
Form Factor: | M.2 2280 (Single-Sided) |
---|---|
Interface: | PCIe 3.0 x4 |
Protocol: | NVMe 1.3 |
Power Draw: |
0.68 W (Idle) 2.8 W (Avg) 4.3 W (Max) |
Manufacturer: | Silicon Motion |
---|---|
Name: | SM2263EN |
Architecture: | ARM 32-bit Cortex-R5 |
Core Count: | Dual-Core |
Frequency: | 650 MHz |
Foundry: | TSMC |
Process: | 28 nm |
Flash Channels: | 4 @ 800 MT/s |
Chip Enables: | 4 |
Controller Features: | DRAM (enabled) |
Manufacturer: | Micron |
---|---|
Name: | N18A FortisFlash |
Rebranded: | 29F04T2ANCQHI |
Type: | QLC |
Technology: | 64-layer |
Speed: | 50 MT/s .. 800 MT/s |
Capacity: | 4 chips @ 4 Tbit |
ONFI: | 4.0 |
Topology: | Floating Gate |
Process: | 20 nm |
Die Size: | 157 mm² (6.5 Gbit/mm²) |
Dies per Chip: | 4 dies @ 1 Tbit |
Planes per Die: | 4 |
Decks per Die: | 2 |
Word Lines: |
74 per NAND String
86.5% Vertical Efficiency |
Read Time (tR): | 127 µs |
Program Time (tProg): | 3000 µs |
Block Erase Time (tBERS): | 15 ms |
Die Read Speed: | 503 MB/s |
Die Write Speed: | 21 MB/s |
Endurance: (up to) |
1500 P/E Cycles |
Page Size: | 16 KB |
Block Size: | 3072 Pages |
Plane Size: | 684 Blocks |
Type: | DDR3L-1600 CL11 |
---|---|
Name: | NANYA NT5CC128M16IP-DI |
Capacity: |
256 MB
(1x 256 MB) |
Organization: | 2Gx16 |
Sequential Read: | 1,800 MB/s |
---|---|
Sequential Write: | 1,800 MB/s |
Random Read: | 220,000 IOPS |
Random Write: | 220,000 IOPS |
Endurance: | 400 TBW |
Warranty: | 5 Years |
MTBF: | 1.6 Million Hours |
Drive Writes Per Day (DWPD): | 0.1 |
SLC Write Cache: |
approx. 280 GB
(dynamic only) |
Speed when Cache Exhausted: | approx. 175 MB/s |
TRIM: | Yes |
---|---|
SMART: | Yes |
Power Loss Protection: | No |
Encryption: |
|
RGB Lighting: | No |
PS5 Compatible: | No |
Controller:Controller speed not confirmed, it can vary from drive to drive. NAND Die:tR Average as pSLC mode: 52 µs |