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Phison E31T Engineering Sample 2 TB

2 TB
Capacity
Phison E31T
Controller
TLC
Flash
PCIe 5.0 x4
Interface
M.2 2280
Form Factor

This SSD is not released yet.

Data on this page may change in the future.

PCB Front
PCB Front
PCB Back
PCB Back
Flash
Flash
SSD Controller
Controller
NAND Die
NAND Die
The Phison E31T Engineering Sample will be a solid-state drive in the M.2 2280 form factor, that is expected to launch in 2024. It is only available in the 2 TB capacity listed on this page. With the rest of the system, the Phison E31T Engineering Sample interfaces using a PCI-Express 5.0 x4 connection. The SSD controller is the PS5031-E31T from Phison, a DRAM cache is not available. Phison has installed 218-layer TLC NAND flash on the E31T Engineering Sample, the flash chips are made by Kioxia. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. The cache is sized at 440 GB, once it is full, writes complete at 1500 MB/s. Copying data out of the SLC cache (folding) completes at 800 MB/s. Thanks to support for the fast PCI-Express 5.0 interface, performance is excellent. The E31T Engineering Sample is rated for sequential read speeds of up to 10,300 MB/s and 8,600 MB/s write; random IO reaches 1300K IOPS for read and 1500K for writes.
We have no information regarding the price at release. Phison guarantees an endurance rating of 1200 TBW, a very low value compared to other SSDs. New information will be added to this page as soon as it becomes available.

Solid-State-Drive

Capacity: 2 TB (2000 GB)
Overprovisioning: 185.4 GB / 10.0 %
Production: Unreleased
Released: 2024
Part Number: Unknown
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 5.0 x4
Protocol: NVMe 2.0
Power Draw: 2.2 W (Idle)
3.4 W (Avg)
5.0 W (Max)

Controller

Manufacturer: Phison
Name: PS5031-E31T
Architecture: ARM 32-bit Cortex-R5
Core Count: Triple-Core
Frequency: 1,200 MHz
Foundry: TSMC
Process: 7 nm
Flash Channels: 4 @ 3,600 MT/s
Chip Enables: 4
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: Kioxia
Name: BiCS6
Part Number: T2BIGB5A2V
Type: TLC
Technology: 218-layer
Speed: 3600 MT/s
Capacity: 2 chips @ 8 Tbit
Toggle: 5.1
Topology: Charge Trap
Die Size: 60 mm²
(17.1 Gbit/mm²)
Dies per Chip: 8 dies @ 1 Tbit
Planes per Die: 4
Decks per Die: 2
Read Time (tR): 40 µs
Die Write Speed: 205 MB/s
Page Size: 16 KB

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: 10,300 MB/s
Sequential Write: 8,600 MB/s
Random Read: 1,300,000 IOPS
Random Write: 1,500,000 IOPS
Endurance: 1200 TBW
Warranty: Unknown
SLC Write Cache: approx. 440 GB
(dynamic only)
Speed when Cache Exhausted: approx. 1500 MB/s
Cache Folding Speed: 800 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • TCG Pyrite
RGB Lighting: No
PS5 Compatible: Yes

Reviews

Notes

NAND Die:

This chip is comprised of 8 physical planes (sub planes) with 8KB WLs working as 4 logical planes to keep short BL and WL latency.
tPROG: Could be between 312µs and 624µs

Oct 4th, 2024 06:43 EDT change timezone

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