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Samsung 870 EVO 2 TB (V-NAND V6 Prime 512Gb)

2 TB
Capacity
Samsung MKX Metis
Controller
TLC
Flash
SATA 6 Gbps
Interface
2.5"
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

SSD Controller
Controller
The Samsung 870 EVO is a solid-state drive in the 2.5" form factor, launched in 2023. It is available in capacities ranging from 1 TB to 4 TB. This page reports specifications for the 2 TB variant. With the rest of the system, the Samsung 870 EVO interfaces using a SATA 6 Gbps connection. The SSD controller is the MKX (Metis S4LR059) from Samsung, a DRAM cache chip is available. Samsung has installed 133-layer TLC NAND flash on the 870 EVO, the flash chips are made by Samsung. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are handled more quickly. The cache is sized at 78 GB, once it is full, writes complete at 530 MB/s. The 870 EVO is rated for sequential read speeds of up to 560 MB/s and 530 MB/s write; random IO reaches 98K IOPS for read and 88K for writes.
At its launch, the SSD was priced at 250 USD. The warranty length is set to five years, which is an excellent warranty period. Samsung guarantees an endurance rating of 1200 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 2 TB (2000 GB)
Variants: 1 TB 2 TB 4 TB
Hardware Versions:
Overprovisioning: 185.4 GB / 10.0 %
Production: Active
Released: 2023
Price at Launch: 250 USD
Part Number: MZ-77E2T0
Market: Consumer

Physical

Form Factor: 2.5"
Interface: SATA 6 Gbps
Protocol: AHCI
Power Draw: 0.04 W (Idle)
2.5 W (Avg)
4.5 W (Max)

Controller

Manufacturer: Samsung
Name: MKX (Metis S4LR059)
Architecture: ARM 32-bit Cortex-R4
Core Count: Triple-Core
Foundry: Samsung FinFET
Process: 14 nm
Flash Channels: 8
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V6 Prime
Type: TLC
Technology: 133-layer
Speed: 1200 MT/s
Capacity: 2 chips @ Unknown
Toggle: 4.0
Topology: Charge Trap
Planes per Die: 2
Decks per Die: 1
Word Lines: 136 per NAND String
97.8% Vertical Efficiency
Page Size: 16 KB

DRAM Cache

Type: LPDDR4-1866
Name: Samsung
Capacity: 2048 MB
(1x 2048 MB)
Organization: 16Gx16

Performance

Sequential Read: 560 MB/s
Sequential Write: 530 MB/s
Random Read: 98,000 IOPS
Random Write: 88,000 IOPS
Endurance: 1200 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: approx. 78 GB
(72 GB Dynamic
+ 6 GB Static)
Speed when Cache Exhausted: approx. 530 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-128
  • AES-256
  • TCG Opal
RGB Lighting: No
PS5 Compatible: No

Notes

NAND Die:

4-sub planes

Nov 14th, 2024 06:37 EST change timezone

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