Capacity: | 500 GB |
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Variants: | 500 GB 1 TB 2 TB 4 TB |
Overprovisioning: | 46.3 GB / 10.0 % |
Production: | Active |
Released: | Jan 20th, 2021 |
Price at Launch: | 70 USD |
Part Number: | MZ-77E1T0 |
Market: | Consumer |
Form Factor: | 2.5" |
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Interface: | SATA 6 Gbps |
Protocol: | AHCI |
Power Draw: |
0.03 W (Idle) 2.2 W (Avg) 3.5 W (Max) |
Manufacturer: | Samsung |
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Name: | MKX (Metis S4LR059) |
Architecture: | ARM 32-bit Cortex-R4 |
Core Count: | Triple-Core |
Foundry: | Samsung FinFET |
Process: | 14 nm |
Flash Channels: | 8 |
Chip Enables: | 8 |
Controller Features: | DRAM (enabled) |
Manufacturer: | Samsung |
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Name: | V-NAND V6 |
Type: | TLC |
Technology: | 128-layer |
Speed: | 1200 MT/s |
Capacity: | 1 chip @ 4 Tbit |
Toggle: | 4.0 |
Topology: | Charge Trap |
Die Size: | 102 mm² (5.0 Gbit/mm²) |
Dies per Chip: | 8 dies @ 512 Gbit |
Planes per Die: | 2 |
Decks per Die: | 1 |
Word Lines: |
136 per NAND String
94.1% Vertical Efficiency |
Read Time (tR): | 45 µs |
Program Time (tProg): | 390 µs |
Block Erase Time (tBERS): | 3.5 ms |
Die Read Speed: | 711 MB/s |
Die Write Speed: | 82 MB/s |
Endurance: (up to) |
3000 P/E Cycles |
Page Size: | 16 KB |
Type: | LPDDR4-1866 |
---|---|
Name: | Samsung |
Capacity: |
512 MB
(1x 512 MB) |
Organization: | 4Gx16 |
Sequential Read: | 560 MB/s |
---|---|
Sequential Write: | 530 MB/s |
Random Read: | 98,000 IOPS |
Random Write: | 88,000 IOPS |
Endurance: | 300 TBW |
Warranty: | 5 Years |
MTBF: | 1.5 Million Hours |
Drive Writes Per Day (DWPD): | 0.3 |
SLC Write Cache: |
approx. 22 GB
(18 GB Dynamic + 4 GB Static) |
Speed when Cache Exhausted: | approx. 300 MB/s |
TRIM: | Yes |
---|---|
SMART: | Yes |
Power Loss Protection: | No |
Encryption: |
|
RGB Lighting: | No |
PS5 Compatible: | No |
Drive:Each Die has 2 Planes with 2 sub-planes with 8KB pages. NAND Die:A Dual-plane Die with 2 sub-planes with 8 KiB pages in order to improve performance through paralellism. |