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Samsung 870 EVO 500 GB (V-NAND V6 512Gb)

500 GB
Capacity
Samsung MKX Metis
Controller
TLC
Flash
SATA 6 Gbps
Interface
2.5"
Form Factor
Back
Back
Package
Package
SSD Controller
Controller
NAND Die
NAND Die
The Samsung 870 EVO is a solid-state drive in the 2.5" form factor, launched on January 20th, 2021. It is available in capacities ranging from 500 GB to 4 TB. This page reports specifications for the 500 GB variant. With the rest of the system, the Samsung 870 EVO interfaces using a SATA 6 Gbps connection. The SSD controller is the MKX (Metis S4LR059) from Samsung, a DRAM cache chip is available. Samsung has installed 128-layer TLC NAND flash on the 870 EVO, the flash chips are made by Samsung. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are handled more quickly. The cache is sized at 22 GB, once it is full, writes complete at 300 MB/s. The 870 EVO is rated for sequential read speeds of up to 560 MB/s and 530 MB/s write; random IO reaches 98K IOPS for read and 88K for writes.
At its launch, the SSD was priced at 70 USD. The warranty length is set to five years, which is an excellent warranty period. Samsung guarantees an endurance rating of 300 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 500 GB
Variants: 500 GB 1 TB 2 TB 4 TB
Overprovisioning: 46.3 GB / 10.0 %
Production: Active
Released: Jan 20th, 2021
Price at Launch: 70 USD
Part Number: MZ-77E1T0
Market: Consumer

Physical

Form Factor: 2.5"
Interface: SATA 6 Gbps
Protocol: AHCI
Power Draw: 0.03 W (Idle)
2.2 W (Avg)
3.5 W (Max)

Controller

Manufacturer: Samsung
Name: MKX (Metis S4LR059)
Architecture: ARM 32-bit Cortex-R4
Core Count: Triple-Core
Foundry: Samsung FinFET
Process: 14 nm
Flash Channels: 8
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V6
Type: TLC
Technology: 128-layer
Speed: 1200 MT/s
Capacity: 1 chip @ 4 Tbit
Toggle: 4.0
Topology: Charge Trap
Die Size: 102 mm²
(5.0 Gbit/mm²)
Dies per Chip: 8 dies @ 512 Gbit
Planes per Die: 2
Decks per Die: 1
Word Lines: 136 per NAND String
94.1% Vertical Efficiency
Read Time (tR): 45 µs
Program Time (tProg): 390 µs
Block Erase Time (tBERS): 3.5 ms
Die Read Speed: 711 MB/s
Die Write Speed: 82 MB/s
Endurance:
(up to)
3000 P/E Cycles
Page Size: 16 KB

DRAM Cache

Type: LPDDR4-1866
Name: Samsung
Capacity: 512 MB
(1x 512 MB)
Organization: 4Gx16

Performance

Sequential Read: 560 MB/s
Sequential Write: 530 MB/s
Random Read: 98,000 IOPS
Random Write: 88,000 IOPS
Endurance: 300 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: approx. 22 GB
(18 GB Dynamic
+ 4 GB Static)
Speed when Cache Exhausted: approx. 300 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-128
  • AES-256
  • TCG Opal
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Drive:

Each Die has 2 Planes with 2 sub-planes with 8KB pages.

NAND Die:

A Dual-plane Die with 2 sub-planes with 8 KiB pages in order to improve performance through paralellism.
Endurance: Could be from 1.500 to 3.000 P.E.C. depending on NAND binning

Oct 5th, 2024 03:01 EDT change timezone

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