Capacity: | 1 TB (1000 GB) |
---|---|
Variants: | 250 GB 500 GB 1 TB |
Overprovisioning: | 92.7 GB / 10.0 % |
Production: | End-of-life |
Released: | Oct 2016 |
Price at Launch: | 480 USD |
Part Number: | MZ-V6E500BW |
Market: | Consumer |
Form Factor: | M.2 2280 (Single-Sided) |
---|---|
Interface: | PCIe 3.0 x4 |
Protocol: | NVMe 1.2 |
Power Draw: |
0.04 W (Idle) 5.7 W (Avg) Unknown (Max) |
Manufacturer: | Samsung |
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Name: | Polaris (S4LP077X01-8030) |
Architecture: | ARM 32-bit Cortex-R5 |
Core Count: | 5-Core |
Foundry: | Samsung |
Process: | 28 nm |
Flash Channels: | 8 |
Chip Enables: | 8 |
Controller Features: | DRAM (enabled) |
Manufacturer: | Samsung |
---|---|
Name: | V-NAND V3 |
Part Number: | K9DUGY8SCM-DCK0 |
Type: | TLC |
Technology: | 48-layer |
Speed: | 1000 MT/s |
Capacity: | 2 chips @ 4 Tbit |
Topology: | Charge Trap |
Die Size: | 98 mm² (2.6 Gbit/mm²) |
Dies per Chip: | 16 dies @ 256 Gbit |
Planes per Die: | 2 |
Decks per Die: | 1 |
Word Lines: |
54 per NAND String
88.9% Vertical Efficiency |
Read Time (tR): | 45 µs |
Program Time (tProg): | 660 µs |
Block Erase Time (tBERS): | 3500 ms |
Die Write Speed: | 53 MB/s |
Page Size: | 16 KB |
Block Size: | 576 Pages |
Plane Size: | 3776 Blocks |
Type: | LPDDR3-1866 |
---|---|
Name: | SAMSUNG K4E8E304EE-EGCF |
Capacity: |
1024 MB
(1x 1024 MB) |
Host-Memory-Buffer (HMB): | N/A |
Sequential Read: | 3,200 MB/s |
---|---|
Sequential Write: | 1,900 MB/s |
Random Read: | 380,000 IOPS |
Random Write: | 360,000 IOPS |
Endurance: | 400 TBW |
Warranty: | 5 Years |
MTBF: | 1.5 Million Hours |
Drive Writes Per Day (DWPD): | 0.2 |
SLC Write Cache: |
approx. 36 GB
(30 GB Dynamic + 6 GB Static) |
Speed when Cache Exhausted: | approx. 1200 MB/s |
TRIM: | Yes |
---|---|
SMART: | Yes |
Power Loss Protection: | No |
Encryption: |
|
RGB Lighting: | No |
PS5 Compatible: | No |