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Samsung 960 EVO 1 TB

1 TB
Capacity
Samsung Polaris
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor
Back
Back
Package
Package
DRAM
TweakTown
DRAM
Flash
TweakTown
Flash
SSD Controller
Controller
NAND Die
NAND Die
The Samsung 960 EVO was a solid-state drive in the M.2 2280 form factor, launched in October 2016, that is no longer in production. It was available in capacities ranging from 250 GB to 1 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Samsung 960 EVO interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the Polaris (S4LP077X01-8030) from Samsung, a DRAM cache chip is available. Samsung has installed 48-layer TLC NAND flash on the 960 EVO, the flash chips are made by Samsung. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. The cache is sized at 36 GB, once it is full, writes complete at 1200 MB/s. The 960 EVO is rated for sequential read speeds of up to 3,200 MB/s and 1,900 MB/s write; random IO reaches 380K IOPS for read and 360K for writes.
At its launch, the SSD was priced at 480 USD. The warranty length is set to five years, which is an excellent warranty period. Samsung guarantees an endurance rating of 400 TBW, a relatively low value compared to other SSDs.

Solid-State-Drive

Capacity: 1 TB (1000 GB)
Variants: 250 GB 500 GB 1 TB
Overprovisioning: 92.7 GB / 10.0 %
Production: End-of-life
Released: Oct 2016
Price at Launch: 480 USD
Part Number: MZ-V6E500BW
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.2
Power Draw: 0.04 W (Idle)
5.7 W (Avg)
Unknown (Max)

Controller

Manufacturer: Samsung
Name: Polaris (S4LP077X01-8030)
Architecture: ARM 32-bit Cortex-R5
Core Count: 5-Core
Foundry: Samsung
Process: 28 nm
Flash Channels: 8
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V3
Part Number: K9DUGY8SCM-DCK0
Type: TLC
Technology: 48-layer
Speed: 1000 MT/s
Capacity: 2 chips @ 4 Tbit
Topology: Charge Trap
Die Size: 98 mm²
(2.6 Gbit/mm²)
Dies per Chip: 16 dies @ 256 Gbit
Planes per Die: 2
Decks per Die: 1
Word Lines: 54 per NAND String
88.9% Vertical Efficiency
Read Time (tR): 45 µs
Program Time (tProg): 660 µs
Block Erase Time (tBERS): 3500 ms
Die Write Speed: 53 MB/s
Page Size: 16 KB
Block Size: 576 Pages
Plane Size: 3776 Blocks

DRAM Cache

Type: LPDDR3-1866
Name: SAMSUNG K4E8E304EE-EGCF
Capacity: 1024 MB
(1x 1024 MB)
Host-Memory-Buffer (HMB): N/A

Performance

Sequential Read: 3,200 MB/s
Sequential Write: 1,900 MB/s
Random Read: 380,000 IOPS
Random Write: 360,000 IOPS
Endurance: 400 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.2
SLC Write Cache: approx. 36 GB
(30 GB Dynamic
+ 6 GB Static)
Speed when Cache Exhausted: approx. 1200 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-128
  • AES-256
  • TCG Opal
RGB Lighting: No
PS5 Compatible: No

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Notes

Dec 2nd, 2024 23:04 CST change timezone

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