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Samsung 970 EVO Plus 1 TB (Phoenix + V5)

1 TB
Capacity
Samsung Phoenix
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

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Back
Package
Package
DRAM
Tom's Hardware
DRAM
Flash
Tom's Hardware
Flash
SSD Controller
Controller
NAND Die
NAND Die
The Samsung 970 EVO Plus is a solid-state drive in the M.2 2280 form factor, launched in February 2019. It is available in capacities ranging from 250 GB to 2 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Samsung 970 EVO Plus interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the Phoenix (S4LR020) from Samsung, a DRAM cache chip is available. Samsung has installed 92-layer TLC NAND flash on the 970 EVO Plus, the flash chips are made by Samsung. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. The cache is sized at 42 GB, once it is full, writes complete at 1700 MB/s. The 970 EVO Plus is rated for sequential read speeds of up to 3,500 MB/s and 3,300 MB/s write; random IOPS reach up to 600K for reads and 550K for writes.
At its launch, the SSD was priced at 250 USD. The warranty length is set to five years, which is an excellent warranty period. Samsung guarantees an endurance rating of 600 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 1 TB (1000 GB)
Variants: 250 GB 500 GB 1 TB 2 TB
Hardware Versions:
Overprovisioning: 92.7 GB / 10.0 %
Production: Active
Released: Feb 2019
Price at Launch: 250 USD
Part Number: MZ-V7S1T0B/AM
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: 0.06 W (Idle)
3.5 W (Avg)
6.4 W (Max)

Controller

Manufacturer: Samsung
Name: Phoenix (S4LR020)
Architecture: ARM 32-bit Cortex-R7
Core Count: 5-Core
Foundry: Samsung FinFET
Process: 14 nm
Flash Channels: 8 @ 800 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V5
Part Number: K9DUGY8J6B-DCK0
Type: TLC
Technology: 92-layer
Speed: 533 MT/s .. 1400 MT/s
Capacity: 2 chips @ 4 Tbit
Toggle: 4.0
Topology: Charge Trap
Dies per Chip: 16 dies @ 256 Gbit
Planes per Die: 2
Decks per Die: 1
Word Lines: 100 per NAND String
92.0% Vertical Efficiency
Read Time (tR): 73 µs
Program Time (tProg): 500 µs
Block Erase Time (tBERS): 3.5 ms
Die Write Speed: 64 MB/s
Page Size: 16 KB

DRAM Cache

Type: LPDDR4-1866
Name: SAMSUNG K4F8E3D4HF-BGCH
Capacity: 1024 MB
(1x 1024 MB)
Organization: 8Gx32
Host-Memory-Buffer (HMB): N/A

Performance

Sequential Read: 3,500 MB/s
Sequential Write: 3,300 MB/s
Random Read: 600,000 IOPS
Random Write: 550,000 IOPS
Endurance: 600 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: approx. 42 GB
(36 GB Dynamic
+ 6 GB Static)
Speed when Cache Exhausted: approx. 1700 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-128
  • AES-256
  • TCG Opal
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Drive:

2nd Revision might came with different Nand and the new "Elpis Controller" found in the Samsung 980 Pro.

Sustained write speed post-pSLC Cache have also dropped from ~1700 MB/s to ~800 MB/s in the 1TB variant.

Oct 5th, 2024 05:46 EDT change timezone

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