Multiple hardware versions found.
Performance could vary due to unannounced flash/controller changes.
Capacity: | 250 GB |
---|---|
Variants: | 250 GB 500 GB 1 TB 2 TB |
Hardware Versions: | |
Overprovisioning: | 23.2 GB / 10.0 % |
Production: | Active |
Released: | Feb 2019 |
Price at Launch: | 90 USD |
Part Number: | MZ-V7S250B/AM |
Market: | Consumer |
Form Factor: | M.2 2280 (Single-Sided) |
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Interface: | PCIe 3.0 x4 |
Protocol: | NVMe 1.3 |
Power Draw: |
0.03 W (Idle) 5.0 W (Avg) 8.0 W (Max) |
Manufacturer: | Samsung |
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Name: | Phoenix (S4LR020) |
Architecture: | ARM 32-bit Cortex-R7 |
Core Count: | 5-Core |
Foundry: | Samsung FinFET |
Process: | 14 nm |
Flash Channels: | 8 @ 800 MT/s |
Chip Enables: | 4 |
Controller Features: | DRAM (enabled) |
Manufacturer: | Samsung |
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Name: | V-NAND V5 |
Part Number: | K9DUGY8J5B-DCK0 |
Type: | TLC |
Technology: | 92-layer |
Speed: | 533 MT/s .. 1400 MT/s |
Capacity: | 2 chips @ 1 Tbit |
Toggle: | 4.0 |
Topology: | Charge Trap |
Dies per Chip: | 4 dies @ 256 Gbit |
Planes per Die: | 2 |
Decks per Die: | 1 |
Word Lines: |
100 per NAND String
92.0% Vertical Efficiency |
Read Time (tR): | 73 µs |
Program Time (tProg): | 500 µs |
Block Erase Time (tBERS): | 3.5 ms |
Die Write Speed: | 64 MB/s |
Page Size: | 16 KB |
Type: | LPDDR4-1866 |
---|---|
Name: | SAMSUNG K4F8E3D4HF-BGCH |
Capacity: |
512 MB
(1x 512 MB) |
Organization: | 4Gx32 |
Host-Memory-Buffer (HMB): | N/A |
Sequential Read: | 3,500 MB/s |
---|---|
Sequential Write: | 2,300 MB/s |
Random Read: | 250,000 IOPS |
Random Write: | 550,000 IOPS |
Endurance: | 150 TBW |
Warranty: | 5 Years |
MTBF: | 1.5 Million Hours |
Drive Writes Per Day (DWPD): | 0.3 |
SLC Write Cache: |
approx. 13 GB
(9 GB Dynamic + 4 GB Static) |
Speed when Cache Exhausted: | approx. 400 MB/s |
TRIM: | Yes |
---|---|
SMART: | Yes |
Power Loss Protection: | No |
Encryption: |
|
RGB Lighting: | No |
PS5 Compatible: | No |
Drive:2nd Revision might came with different Nand and the new "Elpis Controller" found in the Samsung 980 Pro |