Multiple hardware versions found.
Performance could vary due to unannounced flash/controller changes.
Capacity: | 250 GB |
---|---|
Variants: | 250 GB 500 GB 1 TB |
Hardware Versions: | |
Overprovisioning: | 23.2 GB / 10.0 % |
Production: | Active |
Released: | Sep 2020 |
Price at Launch: | 50 USD |
Part Number: | MZ-V8V250BW |
Market: | Consumer |
Form Factor: | M.2 2280 (Single-Sided) |
---|---|
Interface: | PCIe 3.0 x4 |
Protocol: | NVMe 1.4 |
Power Draw: |
0.05 W (Idle) 3.7 W (Avg) 5.6 W (Max) |
Manufacturer: | Samsung |
---|---|
Name: | Pablo (S4LR033) |
Architecture: | ARM 32-bit Cortex-R8 + ARM 32-bit Cortex-R5 |
Core Count: | 5-Core |
Foundry: | Samsung FinFET |
Process: | 14 nm |
Flash Channels: | 4 @ 1,200 MT/s |
Chip Enables: | 4 |
Controller Features: |
HMB
(enabled)
|
Manufacturer: | Samsung |
---|---|
Name: | V-NAND V6 |
Rebranded: | SAMSUNG V6 V-NAND |
Type: | TLC |
Technology: | 128-layer |
Speed: | 800 MT/s .. 1200 MT/s |
Capacity: | 1 chip @ 2 Tbit |
Toggle: | 4.0 |
Topology: | Charge Trap |
Dies per Chip: | 8 dies @ 256 Gbit |
Planes per Die: | 2 |
Decks per Die: | 1 |
Word Lines: |
136 per NAND String
94.1% Vertical Efficiency |
Read Time (tR): | 45 µs |
Program Time (tProg): | 400 µs |
Block Erase Time (tBERS): | 3.5 ms |
Die Read Speed: | 711 MB/s |
Die Write Speed: | 84 MB/s |
Page Size: | 16 KB |
Type: | None |
---|---|
Host-Memory-Buffer (HMB): | 64 MB |
Sequential Read: | 2,900 MB/s |
---|---|
Sequential Write: | 1,300 MB/s |
Random Read: | 230,000 IOPS |
Random Write: | 320,000 IOPS |
Endurance: | 150 TBW |
Warranty: | 5 Years |
MTBF: | 1.5 Million Hours |
Drive Writes Per Day (DWPD): | 0.3 |
SLC Write Cache: |
approx. 45 GB
(dynamic only) |
TRIM: | Yes |
---|---|
SMART: | Yes |
Power Loss Protection: | No |
Encryption: |
|
RGB Lighting: | No |
PS5 Compatible: | No |
NAND Die:This die, in theory should have half the block count per each plane |