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Samsung 980 PRO 2 TB

2 TB
Capacity
Samsung Elpis
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
Back
Back
Package
Package
SSD Controller
Controller
NAND Die
NAND Die
The Samsung 980 PRO is a solid-state drive in the M.2 2280 form factor, launched on September 22nd, 2020. It is available in capacities ranging from 250 GB to 2 TB. This page reports specifications for the 2 TB variant. With the rest of the system, the Samsung 980 PRO interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the Elpis (S4LV003) from Samsung, a DRAM cache chip is available. Samsung has installed 128-layer TLC NAND flash on the 980 PRO, the flash chips are made by Samsung. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. The cache is sized at 236 GB, once it is full, writes complete at 2000 MB/s. Copying data out of the SLC cache (folding) completes at 1500 MB/s. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The 980 PRO is rated for sequential read speeds of up to 7,000 MB/s and 5,100 MB/s write; random IO reaches 1000K IOPS for read and 1000K for writes.
At its launch, the SSD was priced at 430 USD. The warranty length is set to five years, which is an excellent warranty period. Samsung guarantees an endurance rating of 1200 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 2 TB (2000 GB)
Variants: 250 GB 500 GB 1 TB 2 TB
Overprovisioning: 185.4 GB / 10.0 %
Production: Active
Released: Sep 22nd, 2020
Price at Launch: 430 USD
Part Number: MZ-V8P2T0
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.3
Power Draw: 0.04 W (Idle)
6.1 W (Avg)
7.2 W (Max)

Controller

Manufacturer: Samsung
Name: Elpis (S4LV003)
Architecture: ARM 32-bit Cortex-R8
Core Count: 5-Core
Foundry: Samsung
Process: 8 nm
Flash Channels: 8 @ 1,400 MT/s
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V6
Type: TLC
Technology: 128-layer
Speed: 1200 MT/s
Capacity: 2 chips @ 8 Tbit
Toggle: 4.0
Topology: Charge Trap
Die Size: 102 mm²
(5.0 Gbit/mm²)
Dies per Chip: 16 dies @ 512 Gbit
Planes per Die: 2
Decks per Die: 1
Word Lines: 136 per NAND String
94.1% Vertical Efficiency
Read Time (tR): 45 µs
Program Time (tProg): 390 µs
Block Erase Time (tBERS): 3.5 ms
Die Read Speed: 711 MB/s
Die Write Speed: 82 MB/s
Endurance:
(up to)
3000 P/E Cycles
Page Size: 16 KB

DRAM Cache

Type: LPDDR4-1866
Name: SAMSUNG
Capacity: 2048 MB
(1x 2048 MB)
Organization: 16Gx32

Performance

Sequential Read: 7,000 MB/s
Sequential Write: 5,100 MB/s
Random Read: 1,000,000 IOPS
Random Write: 1,000,000 IOPS
Endurance: 1200 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: approx. 236 GB
(230 GB Dynamic
+ 6 GB Static)
Speed when Cache Exhausted: approx. 2000 MB/s
Cache Folding Speed: 1500 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-128
  • AES-256
  • TCG Opal
RGB Lighting: No
PS5 Compatible: Yes

Reviews

Notes

Drive:

Nand bus speed: 800 MT/s up to 1400 MT/s
NAND Flash model might vary

Controller:

NAND Flash Bus not confirmed, could be higher or slower.

NAND Die:

A Dual-plane Die with 2 sub-planes with 8 KiB pages in order to improve performance through paralellism.
Endurance: Could be from 1.500 to 3.000 P.E.C. depending on NAND binning

Oct 5th, 2024 02:48 EDT change timezone

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