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Samsung 980 PRO 250 GB

250 GB
Capacity
Samsung Elpis
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
Back
Back
Package
Package
SSD Controller
Controller
NAND Die
NAND Die
The Samsung 980 PRO is a solid-state drive in the M.2 2280 form factor, launched on September 22nd, 2020. It is available in capacities ranging from 250 GB to 2 TB. This page reports specifications for the 250 GB variant. With the rest of the system, the Samsung 980 PRO interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the Elpis (S4LV003) from Samsung, a DRAM cache chip is available. Samsung has installed 128-layer TLC NAND flash on the 980 PRO, the flash chips are made by Samsung. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. The cache is sized at 49 GB, once it is full, writes complete at 500 MB/s. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The 980 PRO is rated for sequential read speeds of up to 6,400 MB/s and 2,700 MB/s write; random IOPS reach up to 500K for reads and 600K for writes.
At its launch, the SSD was priced at 90 USD. The warranty length is set to five years, which is an excellent warranty period. Samsung guarantees an endurance rating of 150 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 250 GB
Variants: 250 GB 500 GB 1 TB 2 TB
Overprovisioning: 23.2 GB / 10.0 %
Production: Active
Released: Sep 22nd, 2020
Price at Launch: 90 USD
Part Number: MZ-V8P250
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.3
Power Draw: 0.04 W (Idle)
3.9 W (Avg)
Unknown (Max)

Controller

Manufacturer: Samsung
Name: Elpis (S4LV003)
Architecture: ARM 32-bit Cortex-R8
Core Count: 5-Core
Foundry: Samsung
Process: 8 nm
Flash Channels: 8 @ 1,400 MT/s
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V6
Rebranded: Samsung V6 V-NAND
Type: TLC
Technology: 128-layer
Speed: 800 MT/s .. 1200 MT/s
Capacity: 2 chips @ 1 Tbit
Toggle: 4.0
Topology: Charge Trap
Dies per Chip: 4 dies @ 256 Gbit
Planes per Die: 2
Decks per Die: 1
Word Lines: 136 per NAND String
94.1% Vertical Efficiency
Read Time (tR): 45 µs
Program Time (tProg): 400 µs
Block Erase Time (tBERS): 3.5 ms
Die Read Speed: 711 MB/s
Die Write Speed: 84 MB/s
Page Size: 16 KB

DRAM Cache

Type: LPDDR4-1866
Name: SAMSUNG K4F4E3S4HF-BGCH
Capacity: 512 MB
(1x 512 MB)
Organization: 4Gx32

Performance

Sequential Read: 6,400 MB/s
Sequential Write: 2,700 MB/s
Random Read: 500,000 IOPS
Random Write: 600,000 IOPS
Endurance: 150 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: approx. 49 GB
(45 GB Dynamic
+ 4 GB Static)
Speed when Cache Exhausted: approx. 500 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-128
  • AES-256
  • TCG Opal
RGB Lighting: No
PS5 Compatible: Yes

Reviews

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Drive:

Nand bus speed: 800 MT/s up to 1400 MT/s

Controller:

NAND Flash Bus not confirmed, could be higher or slower.

NAND Die:

This die, in theory should have half the block count per each plane

Oct 5th, 2024 01:34 EDT change timezone

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