Capacity: | 1 TB (1000 GB) |
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Variants: | 1 TB 2 TB 4 TB |
Overprovisioning: | 92.7 GB / 10.0 % |
Production: | Active |
Released: | Sep 25th, 2024 |
Price at Launch: | 110 USD |
Part Number: | Unknown |
Market: | Consumer |
Form Factor: | M.2 2280 (Single-Sided) |
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Interface: | PCIe 5.0 x2 |
Protocol: | NVMe 2.0 |
Power Draw: | Unknown |
Interface: | PCIe 4.0 x4 |
Model: | Unknown |
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Manufacturer: | Samsung |
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Name: | V-NAND V8 |
Type: | TLC |
Technology: | 236-layer |
Speed: | 2400 MT/s |
Capacity: | 2 chips @ 4 Tbit |
Toggle: | 5.0 |
Topology: | Charge Trap |
Die Size: | 89 mm² (5.8 Gbit/mm²) |
Dies per Chip: | 8 dies @ 512 Gbit |
Planes per Die: | 4 |
Decks per Die: | 2 |
Read Time (tR): | 40 µs |
Program Time (tProg): | 390 µs |
Block Erase Time (tBERS): | 4.0 ms |
Die Read Speed: | 1600 MB/s |
Die Write Speed: | 164 MB/s |
Page Size: | 16 KB |
Type: | None |
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Host-Memory-Buffer (HMB): | 64 MB |
Sequential Read: | 7,150 MB/s |
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Sequential Write: | 6,300 MB/s |
Random Read: | 850,000 IOPS |
Random Write: | 1,350,000 IOPS |
Endurance: | 600 TBW |
Warranty: | 5 Years |
Drive Writes Per Day (DWPD): | 0.3 |
SLC Write Cache: | Yes |
TRIM: | Yes |
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SMART: | Yes |
Power Loss Protection: | No |
Encryption: |
|
RGB Lighting: | No |
PS5 Compatible: | Yes |
NAND Die:Samsung lists the die as able to do 184 MB/s with an average of 347 µs tPROG, but it does manage to deliver 164 MB/s. |