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Samsung 990 Evo Plus 2 TB

2 TB
Capacity
Unknown
Controller
TLC
Flash
PCIe 5.0 x2
Interface
M.2 2280
Form Factor
Back
Back
The Samsung 990 Evo Plus is a solid-state drive in the M.2 2280 form factor, launched on September 25th, 2024. It is available in capacities ranging from 1 TB to 4 TB. This page reports specifications for the 2 TB variant. With the rest of the system, the Samsung 990 Evo Plus interfaces using a PCI-Express 5.0 x2 connection. The actual SSD controller chip used it unknown, we'll update this page when we find out more. , a DRAM cache is not available. Samsung has installed 236-layer TLC NAND flash on the 990 Evo Plus, the flash chips are made by Samsung. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are handled more quickly. Thanks to support for the fast PCI-Express 5.0 interface, performance is excellent. The 990 Evo Plus is rated for sequential read speeds of up to 7,250 MB/s and 6,300 MB/s write; random IO reaches 1000K IOPS for read and 1350K for writes.
At its launch, the SSD was priced at 185 USD. The warranty length is set to five years, which is an excellent warranty period. Samsung guarantees an endurance rating of 1200 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 2 TB (2000 GB)
Variants: 1 TB 2 TB 4 TB
Overprovisioning: 185.4 GB / 10.0 %
Production: Active
Released: Sep 25th, 2024
Price at Launch: 185 USD
Part Number: Unknown
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 5.0 x2
Protocol: NVMe 2.0
Power Draw: Unknown
Interface:PCIe 4.0 x4

Controller

Model: Unknown

NAND Flash

Manufacturer: Samsung
Name: V-NAND V8
Type: TLC
Technology: 236-layer
Speed: 2400 MT/s
Capacity: 2 chips @ 8 Tbit
Toggle: 5.0
Topology: Charge Trap
Die Size: 89 mm²
(5.8 Gbit/mm²)
Dies per Chip: 16 dies @ 512 Gbit
Planes per Die: 4
Decks per Die: 2
Read Time (tR): 40 µs
Program Time (tProg): 390 µs
Block Erase Time (tBERS): 4.0 ms
Die Read Speed: 1600 MB/s
Die Write Speed: 164 MB/s
Page Size: 16 KB

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: 7,250 MB/s
Sequential Write: 6,300 MB/s
Random Read: 1,000,000 IOPS
Random Write: 1,350,000 IOPS
Endurance: 1200 TBW
Warranty: 5 Years
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
  • TCG Opal
RGB Lighting: No
PS5 Compatible: Yes

Notes

NAND Die:

Samsung lists the die as able to do 184 MB/s with an average of 347 µs tPROG, but it does manage to deliver 164 MB/s.
Also states an average of 1640 MB/s read speeds per each die.

Oct 5th, 2024 01:57 EDT change timezone

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