Report an Error

Samsung 990 Evo Plus 4 TB

4 TB
Capacity
Samsung Piccolo
Controller
TLC
Flash
PCIe 5.0 x2
Interface
M.2 2280
Form Factor
Back
Back
The Samsung 990 Evo Plus is a solid-state drive in the M.2 2280 form factor, launched on September 25th, 2024. It is available in capacities ranging from 1 TB to 4 TB. This page reports specifications for the 4 TB variant. With the rest of the system, the Samsung 990 Evo Plus interfaces using a PCI-Express 5.0 x2 connection. The SSD controller is the Piccolo (S4LY022) from Samsung, a DRAM cache is not available. Samsung has installed 236-layer TLC NAND flash on the 990 Evo Plus, the flash chips are made by Samsung. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. Thanks to support for the fast PCI-Express 5.0 interface, performance is excellent. The 990 Evo Plus is rated for sequential read speeds of up to 7,250 MB/s and 6,300 MB/s write; random IOPS reach up to 1050K for reads and 1400K for writes.
At its launch, the SSD was priced at 345 USD. The warranty length is set to five years, which is an excellent warranty period. Samsung guarantees an endurance rating of 2400 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 4 TB (4000 GB)
Variants: 1 TB 2 TB 4 TB
Overprovisioning: 370.7 GB / 10.0 %
Production: Active
Released: Sep 25th, 2024
Price at Launch: 345 USD
Part Number: Unknown
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 5.0 x2
Protocol: NVMe 2.0
Power Draw: Unknown
Interface:PCIe 4.0 x4

Controller

Manufacturer: Samsung
Name: Piccolo (S4LY022)
Architecture: ARM 32-bit Cortex-R8
Core Count: 6-Core
Foundry: Samsung FinFET
Process: 5 nm
Flash Channels: 4 @ 2,400 MT/s
Chip Enables: 4
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V8
Part Number: K9DYGB8J1B-CCK0 (B-die)
Type: TLC
Technology: 236-layer
Speed: 2400 MT/s
Capacity: 2 chips @ 16 Tbit
Toggle: 5.0
Topology: Charge Trap
Die Size: 89 mm²
(11.5 Gbit/mm²)
Dies per Chip: 16 dies @ 1 Tbit
Planes per Die: 4
Decks per Die: 2
Read Time (tR): 40 µs
Program Time (tProg): 390 µs
Block Erase Time (tBERS): 4.0 ms
Die Read Speed: 1600 MB/s
Die Write Speed: 164 MB/s
Page Size: 16 KB

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: 7,250 MB/s
Sequential Write: 6,300 MB/s
Random Read: 1,050,000 IOPS
Random Write: 1,400,000 IOPS
Endurance: 2400 TBW
Warranty: 5 Years
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
  • TCG Opal
RGB Lighting: No
PS5 Compatible: Yes

Notes

Drive:

Controller but with a nickle platting on the top.

NAND Die:

Samsung lists the die as able to do 184 MB/s with an average of 347 µs tPROG, but it does manage to deliver 164 MB/s.
Also states an average of 1640 MB/s read speeds per each die.

Oct 12th, 2024 04:14 CDT change timezone

New Forum Posts

Popular Reviews

Controversial News Posts