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Samsung PM961 1 TB

1 TB
Capacity
Samsung Polaris
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor
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SSD Controller
Controller
NAND Die
NAND Die
The Samsung PM961 was a solid-state drive in the M.2 2280 form factor, launched in 2017, that is no longer in production. It was available in capacities ranging from 128 GB to 1 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Samsung PM961 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the Polaris (S4LP077X01-8030) from Samsung, a DRAM cache chip is available. Samsung has installed 48-layer TLC NAND flash on the PM961, the flash chips are made by Samsung. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. The PM961 is rated for sequential read speeds of up to 3,000 MB/s and 1,700 MB/s write; random IO reaches 360K IOPS for read and 330K for writes.
At its launch, the SSD was priced at 500 USD. The warranty length is set to three years, which is above average, but shorter than the five years offered by many other vendors. The TBW rating for the Samsung PM961 1 TB is unknown.

Solid-State-Drive

Capacity: 1 TB (1024 GB)
Variants: 128 GB 256 GB 512 GB 1 TB
Overprovisioning: 70.3 GB / 7.4 %
Production: End-of-life
Released: 2017
Price at Launch: 500 USD
Part Number: MZVLW1T0HML-00000
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: Unknown (Idle)
Unknown (Avg)
7.0 W (Max)

Controller

Manufacturer: Samsung
Name: Polaris (S4LP077X01-8030)
Architecture: ARM 32-bit Cortex-R5
Core Count: 5-Core
Foundry: Samsung
Process: 28 nm
Flash Channels: 8
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V3
Type: TLC
Technology: 48-layer
Speed: 1000 MT/s
Capacity: 2 chips @ 4 Tbit
Topology: Charge Trap
Die Size: 98 mm²
(2.6 Gbit/mm²)
Dies per Chip: 16 dies @ 256 Gbit
Planes per Die: 2
Decks per Die: 1
Word Lines: 54 per NAND String
88.9% Vertical Efficiency
Read Time (tR): 45 µs
Program Time (tProg): 660 µs
Block Erase Time (tBERS): 3500 ms
Die Write Speed: 53 MB/s
Page Size: 16 KB
Block Size: 576 Pages
Plane Size: 3776 Blocks

DRAM Cache

Type: LPDDR3
Name: Samsung
Capacity: 1024 MB
(1x 1024 MB)

Performance

Sequential Read: 3,000 MB/s
Sequential Write: 1,700 MB/s
Random Read: 360,000 IOPS
Random Write: 330,000 IOPS
Endurance: Unknown
Warranty: 3 Years
MTBF: 1.5 Million Hours
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
RGB Lighting: No
PS5 Compatible: No

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Notes

Oct 5th, 2024 04:50 EDT change timezone

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