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Samsung PM9A1 2 TB

2 TB
Capacity
Samsung Elpis
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
Back
Back
SSD Controller
Controller
NAND Die
NAND Die
The Samsung PM9A1 is a solid-state drive in the M.2 2280 form factor, launched on September 22nd, 2020. It is available in capacities ranging from 256 GB to 2 TB. This page reports specifications for the 2 TB variant. With the rest of the system, the Samsung PM9A1 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the Elpis (S4LV003) from Samsung, a DRAM cache chip is available. Samsung has installed 128-layer TLC NAND flash on the PM9A1, the flash chips are made by Samsung. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. The cache is sized at 236 GB, once it is full, writes complete at 2000 MB/s. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The PM9A1 is rated for sequential read speeds of up to 7,000 MB/s and 5,200 MB/s write; random IOPS reach up to 1000K for reads and 850K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Samsung guarantees an endurance rating of 1200 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 2 TB (2048 GB)
Variants: 256 GB 512 GB 1 TB 2 TB
Overprovisioning: 140.7 GB / 7.4 %
Production: Active
Released: Sep 22nd, 2020
Part Number: MZVL22T0HBLB-00000
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.3
Power Draw: Unknown

Controller

Manufacturer: Samsung
Name: Elpis (S4LV003)
Architecture: ARM 32-bit Cortex-R8
Core Count: 5-Core
Foundry: Samsung
Process: 8 nm
Flash Channels: 8 @ 1,400 MT/s
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V6
Type: TLC
Technology: 128-layer
Speed: 1200 MT/s
Capacity: 2 chips @ 8 Tbit
Toggle: 4.0
Topology: Charge Trap
Die Size: 102 mm²
(5.0 Gbit/mm²)
Dies per Chip: 16 dies @ 512 Gbit
Planes per Die: 2
Decks per Die: 1
Word Lines: 136 per NAND String
94.1% Vertical Efficiency
Read Time (tR): 45 µs
Program Time (tProg): 390 µs
Block Erase Time (tBERS): 3.5 ms
Die Read Speed: 711 MB/s
Die Write Speed: 82 MB/s
Endurance:
(up to)
3000 P/E Cycles
Page Size: 16 KB

DRAM Cache

Type: LPDDR4-1866
Name: SAMSUNG
Capacity: 2048 MB
(1x 2048 MB)

Performance

Sequential Read: 7,000 MB/s
Sequential Write: 5,200 MB/s
Random Read: 1,000,000 IOPS
Random Write: 850,000 IOPS
Endurance: 1200 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: approx. 236 GB
(230 GB Dynamic
+ 6 GB Static)
Speed when Cache Exhausted: approx. 2000 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-128
  • AES-256
  • TCG Opal
RGB Lighting: No
PS5 Compatible: Yes

Notes

Drive:

Nand bus speed: 800 MT/s up to 1400 MT/s
NAND Flash model might vary

This SSD's design is based on the Samsung 980 Pro, but with firmware changes for better use in OEM machines and Laptops

Controller:

NAND Flash Bus not confirmed, could be higher or slower.

NAND Die:

A Dual-plane Die with 2 sub-planes with 8 KiB pages in order to improve performance through paralellism.
Endurance: Could be from 1.500 to 3.000 P.E.C. depending on NAND binning

Oct 5th, 2024 02:11 EDT change timezone

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