Capacity: | 256 GB |
---|---|
Variants: | 256 GB 512 GB 1 TB 2 TB |
Overprovisioning: | 17.6 GB / 7.4 % |
Production: | Active |
Released: | Sep 22nd, 2020 |
Price at Launch: | 90 USD |
Part Number: | MZVL2256HCHQ-00000 |
Market: | Consumer |
Form Factor: | M.2 2280 (Single-Sided) |
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Interface: | PCIe 4.0 x4 |
Protocol: | NVMe 1.3 |
Power Draw: | Unknown |
Manufacturer: | Samsung |
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Name: | Elpis (S4LV003) |
Architecture: | ARM 32-bit Cortex-R8 |
Core Count: | 5-Core |
Foundry: | Samsung |
Process: | 8 nm |
Flash Channels: | 8 @ 1,400 MT/s |
Chip Enables: | 8 |
Controller Features: | DRAM (enabled) |
Manufacturer: | Samsung |
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Name: | V-NAND V6 |
Type: | TLC |
Technology: | 128-layer |
Speed: | 800 MT/s .. 1200 MT/s |
Capacity: | 2 chips @ 1 Tbit |
Toggle: | 4.0 |
Topology: | Charge Trap |
Dies per Chip: | 4 dies @ 256 Gbit |
Planes per Die: | 2 |
Decks per Die: | 1 |
Word Lines: |
136 per NAND String
94.1% Vertical Efficiency |
Read Time (tR): | 45 µs |
Program Time (tProg): | 400 µs |
Block Erase Time (tBERS): | 3.5 ms |
Die Read Speed: | 711 MB/s |
Die Write Speed: | 84 MB/s |
Page Size: | 16 KB |
Type: | LPDDR4-1866 |
---|---|
Name: | SAMSUNG |
Capacity: |
512 MB
(1x 512 MB) |
Organization: | 4Gx32 |
Sequential Read: | 6,400 MB/s |
---|---|
Sequential Write: | 2,700 MB/s |
Random Read: | 500,000 IOPS |
Random Write: | 600,000 IOPS |
Endurance: | 150 TBW |
Warranty: | 5 Years |
MTBF: | 1.5 Million Hours |
Drive Writes Per Day (DWPD): | 0.3 |
SLC Write Cache: |
approx. 49 GB
(45 GB Dynamic + 4 GB Static) |
Speed when Cache Exhausted: | approx. 500 MB/s |
TRIM: | Yes |
---|---|
SMART: | Yes |
Power Loss Protection: | No |
Encryption: |
|
RGB Lighting: | No |
PS5 Compatible: | Yes |
Drive:Nand bus speed: 800 MT/s up to 1400 MT/s Controller:NAND Flash Bus not confirmed, could be higher or slower. NAND Die:This die, in theory should have half the block count per each plane |