Capacity: | 256 GB |
---|---|
Variants: | 256 GB 512 GB |
Overprovisioning: | 17.6 GB / 7.4 % |
Production: | Unknown |
Released: | 2022 |
Part Number: | MZVL4256HBJD-00B07 |
Market: | Consumer |
Form Factor: | M.2 2280 (Single-Sided) |
---|---|
Interface: | PCIe 4.0 x4 |
Protocol: | NVMe 1.4 |
Power Draw: | Unknown |
Manufacturer: | Marvell |
---|---|
Name: | 88SS1322 Whistler Plus |
Architecture: | Arm® Cortex®-R5 |
Core Count: | Triple-Core |
Foundry: | TSMC FinFET |
Process: | 12 nm |
Flash Channels: | 4 @ 1,200 MT/s |
Chip Enables: | 4 |
Controller Features: |
HMB
(enabled)
|
Manufacturer: | Samsung |
---|---|
Name: | V-NAND V6 |
Part Number: | K9CMGY8J5B-CCK0 |
Type: | TLC |
Technology: | 128-layer |
Speed: | 1200 MT/s |
Capacity: | 1 chip @ 2 Tbit |
Toggle: | 4.0 |
Topology: | Charge Trap |
Die Size: | 102 mm² (5.0 Gbit/mm²) |
Dies per Chip: | 4 dies @ 512 Gbit |
Planes per Die: | 2 |
Decks per Die: | 1 |
Word Lines: |
136 per NAND String
94.1% Vertical Efficiency |
Read Time (tR): | 45 µs |
Program Time (tProg): | 390 µs |
Block Erase Time (tBERS): | 3.5 ms |
Die Read Speed: | 711 MB/s |
Die Write Speed: | 82 MB/s |
Endurance: (up to) |
3000 P/E Cycles |
Page Size: | 16 KB |
Type: | None |
---|---|
Host-Memory-Buffer (HMB): | 64 MB |
Sequential Read: | 3,300 MB/s |
---|---|
Sequential Write: | 1,250 MB/s |
Random Read: | 240,000 IOPS |
Random Write: | 400,000 IOPS |
Endurance: | Unknown |
Warranty: | Unknown |
SLC Write Cache: |
approx. 22 GB
(dynamic only) |
Speed when Cache Exhausted: | approx. 250 MB/s |
TRIM: | Yes |
---|---|
SMART: | Yes |
Power Loss Protection: | No |
Encryption: |
|
RGB Lighting: | No |
PS5 Compatible: | Yes |
NAND Die:A Dual-plane Die with 2 sub-planes with 8 KiB pages in order to improve performance through paralellism. |