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Samsung PM9E1 512 GB

512 GB
Capacity
Samsung Preto
Controller
TLC
Flash
PCIe 5.0 x4
Interface
M.2 2280
Form Factor

This SSD is not released yet.

Data on this page may change in the future.

The Samsung PM9E1 will be a solid-state drive in the M.2 2280 form factor, that is expected to launch in 2024. It is available in capacities ranging from 512 GB to 4 TB. This page reports specifications for the 512 GB variant. With the rest of the system, the Samsung PM9E1 interfaces using a PCI-Express 5.0 x4 connection. The SSD controller is the Presto (S4LY027) from Samsung, a DRAM cache chip is available. Samsung has installed 236-layer TLC NAND flash on the PM9E1, the flash chips are made by Samsung. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. Thanks to support for the fast PCI-Express 5.0 interface, performance is excellent. Performance characteristics of the drive are unknown.
We have no information regarding the price at release. The TBW rating for the Samsung PM9E1 512 GB is unknown, too. New information will be added to this page as soon as it becomes available.

Solid-State-Drive

Capacity: 512 GB
Variants: 512 GB 1 TB 2 TB 4 TB
Overprovisioning: 35.2 GB / 7.4 %
Production: Unreleased
Released: 2024
Part Number: MZVLC512HFJD
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 5.0 x4
Protocol: NVMe 2.0
Power Draw: Unknown

Controller

Manufacturer: Samsung
Name: Presto (S4LY027)
Architecture: ARM 32-bit Cortex-R8
Core Count: 5-Core
Foundry: Samsung FinFET
Process: 5 nm
Flash Channels: 8 @ 2,400 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V8
Type: TLC
Technology: 236-layer
Speed: 2400 MT/s
Capacity: Unknown
Toggle: 5.0
Topology: Charge Trap
Die Size: 89 mm²
(5.8 Gbit/mm²)
Planes per Die: 4
Decks per Die: 2
Read Time (tR): 40 µs
Program Time (tProg): 390 µs
Block Erase Time (tBERS): 4.0 ms
Die Read Speed: 1600 MB/s
Die Write Speed: 164 MB/s
Page Size: 16 KB

DRAM Cache

Type: LPDDR4
Capacity: Unknown

Performance

Sequential Read: Unknown
Sequential Write: Unknown
Random Read: Unknown
Random Write: Unknown
Endurance: Unknown
Warranty: Unknown
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
RGB Lighting: Unknown
PS5 Compatible: Yes

Notes

NAND Die:

Samsung lists the die as able to do 184 MB/s with an average of 347 µs tPROG, but it does manage to deliver 164 MB/s.
Also states an average of 1640 MB/s read speeds per each die.
Oct 5th, 2024 02:49 EDT change timezone

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