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Western Digital SN580 1 TB

1 TB
Capacity
WD 20-82-10082
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
Package
Package
PCB Front
PCB Front
PCB Back
PCB Back
Flash
Flash
SSD Controller
Controller
The Western Digital SN580 is a solid-state drive in the M.2 2280 form factor, launched on June 19th, 2023. It is available in capacities ranging from 250 GB to 2 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Western Digital SN580 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the 20-82-10082-A1 Polaris MP16+ from WD, a DRAM cache is not available. Western Digital has installed 112-layer TLC NAND flash on the SN580, the flash chips are made by Kioxia. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. The cache is sized at 341 GB. Copying data out of the SLC cache (folding) completes at 450 MB/s. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The SN580 is rated for sequential read speeds of up to 4,150 MB/s and 4,150 MB/s write; random IOPS reach up to 600K for reads and 750K for writes.
At its launch, the SSD was priced at 45 USD. The warranty length is set to five years, which is an excellent warranty period. Western Digital guarantees an endurance rating of 600 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 1 TB (1000 GB)
Variants: 250 GB 500 GB 1 TB 2 TB
Overprovisioning: 92.7 GB / 10.0 %
Production: Active
Released: Jun 19th, 2023
Price at Launch: 45 USD
Part Number: WDS100T3B0E
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: 1.0 W (Idle)
2.9 W (Avg)
4.1 W (Max)

Controller

Manufacturer: WD
Name: 20-82-10082-A1 Polaris MP16+
Architecture: ARM Cortex-R
Foundry: TSMC FinFET
Process: 16 nm
Flash Channels: 4 @ 1,600 MT/s
Chip Enables: 4
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: Kioxia
Name: BiCS5
Rebranded: SanDisk 001396 01T00
Type: TLC
Technology: 112-layer
Speed: 1200 MT/s
Capacity: 1 chip @ 8 Tbit
Toggle: 4.0
Topology: Charge Trap
Dies per Chip: 16 dies @ 512 Gbit
Planes per Die: 2
Word Lines: 128 per NAND String
87.5% Vertical Efficiency
Read Time (tR): 56 µs
Program Time (tProg): 484 µs
Die Read Speed: 571 MB/s
Die Write Speed: 66 MB/s
Endurance:
(up to)
3000 P/E Cycles
(100000 in SLC Mode)
Page Size: 16 KB
Block Size: 1344 Pages
Plane Size: 448 Blocks

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 200 MB

Performance

Sequential Read: 4,150 MB/s
Sequential Write: 4,150 MB/s
Random Read: 600,000 IOPS
Random Write: 750,000 IOPS
Endurance: 600 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: approx. 341 GB
(dynamic only)
Cache Folding Speed: 450 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • TCG Pyrite
RGB Lighting: No
PS5 Compatible: Yes

Reviews

Notes

Controller:

Maybe 4-channel controller?

NAND Die:

Although this Die is a 4-plane design, most Kioxia BiCS5 NAND Dies used in most SSDs are dual planes design because of Yield and production cost.
And because of the die being dual-plane the Throughput is cut in half to 66 MB/s per die.
There is no CuA (Circuitry under Array) in the Dual-Plane variant.
Typical Endurance: 1700 P.E.C.
Rated Endurance: 3.000 to 5.000 (up to) P.E.C.
Typ. Endurance eTLC: ~ 6.000 P.E.C.

Oct 5th, 2024 04:40 EDT change timezone

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