Report an Error

Western Digital SN580 2 TB

2 TB
Capacity
WD 20-82-10082
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
SSD Controller
Controller
The Western Digital SN580 is a solid-state drive in the M.2 2280 form factor, launched on June 19th, 2023. It is available in capacities ranging from 250 GB to 2 TB. This page reports specifications for the 2 TB variant. With the rest of the system, the Western Digital SN580 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the 20-82-10082-A1 Polaris MP16+ from WD, a DRAM cache is not available. Western Digital has installed 112-layer TLC NAND flash on the SN580, the flash chips are made by Kioxia. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are handled more quickly. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The SN580 is rated for sequential read speeds of up to 4,150 MB/s and 4,150 MB/s write; random IO reaches 600K IOPS for read and 750K for writes.
At its launch, the SSD was priced at 93 USD. The warranty length is set to five years, which is an excellent warranty period. Western Digital guarantees an endurance rating of 900 TBW, a relatively low value compared to other SSDs.

Solid-State-Drive

Capacity: 2 TB (2000 GB)
Variants: 250 GB 500 GB 1 TB 2 TB
Overprovisioning: 185.4 GB / 10.0 %
Production: Active
Released: Jun 19th, 2023
Price at Launch: 93 USD
Part Number: WDS200T3B0E
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: Unknown (Idle)
3.3 W (Avg)
Unknown (Max)

Controller

Manufacturer: WD
Name: 20-82-10082-A1 Polaris MP16+
Architecture: ARM Cortex-R
Foundry: TSMC FinFET
Process: 16 nm
Flash Channels: 4 @ 1,600 MT/s
Chip Enables: 4
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: Kioxia
Name: BiCS5
Rebranded: SanDisk
Type: TLC
Technology: 112-layer
Speed: 1200 MT/s
Capacity: 1 chip @ 16 Tbit
Toggle: 4.0
Topology: Charge Trap
Dies per Chip: 16 dies @ 1 Tbit
Planes per Die: 2
Word Lines: 128 per NAND String
87.5% Vertical Efficiency
Read Time (tR): 56 µs
Endurance:
(up to)
3000 P/E Cycles
(100000 in SLC Mode)
Page Size: 16 KB
Block Size: 1344 Pages

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 200 MB

Performance

Sequential Read: 4,150 MB/s
Sequential Write: 4,150 MB/s
Random Read: 600,000 IOPS
Random Write: 750,000 IOPS
Endurance: 900 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.2
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • TCG Pyrite
RGB Lighting: No
PS5 Compatible: Yes

Notes

Controller:

Maybe 4-channel controller?

NAND Die:

Typ. Endurance: 1700 ~ 3000 P.E.C.
Typ. pSLC Endurance: 50.000 ~ 100.000 P.E.C.
Typ. Endurance eTLC: ~ 6.000 P.E.C.

Oct 5th, 2024 01:22 EDT change timezone

New Forum Posts

Popular Reviews

Controversial News Posts