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Western Digital SN850X (w/ Heatsink) 1 TB

1 TB
Capacity
WD 20-82-10035
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
SSD Controller
Controller
The Western Digital SN850X (w/ Heatsink) is a solid-state drive in the M.2 2280 form factor, launched on May 9th, 2022. It is available in capacities ranging from 1 TB to 4 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Western Digital SN850X (w/ Heatsink) interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the Black G2 (20-82-10035-B2) from WD, a DRAM cache chip is available. Western Digital has installed 112-layer TLC NAND flash on the SN850X (w/ Heatsink), the flash chips are made by Toshiba. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. The cache is sized at 300 GB, once it is full, writes complete at 1500 MB/s. Copying data out of the SLC cache (folding) completes at 900 MB/s. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The SN850X (w/ Heatsink) is rated for sequential read speeds of up to 7,300 MB/s and 6,300 MB/s write; random IOPS reach up to 800K for reads and 1100K for writes.
At its launch, the SSD was priced at 189 USD. The warranty length is set to five years, which is an excellent warranty period. Western Digital guarantees an endurance rating of 600 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 1 TB (1000 GB)
Variants: 1 TB 2 TB 4 TB
Overprovisioning: 92.7 GB / 10.0 %
Production: Active
Released: May 9th, 2022
Price at Launch: 189 USD
Part Number: WDS100T2X0E
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: 1.2 W (Idle)
3.9 W (Avg)
6.3 W (Max)

Controller

Manufacturer: WD
Name: Black G2 (20-82-10035-B2)
Architecture: ARM 32-bit Cortex-R
Foundry: TSMC FinFET
Process: 16 nm
Flash Channels: 8 @ 1,200 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS5
Type: TLC
Technology: 112-layer
Speed: 1066 MT/s
Capacity: 2 chips @ 4 Tbit
Toggle: 4.0
Topology: Charge Trap
Dies per Chip: 8 dies @ 512 Gbit
Planes per Die: 2
Word Lines: 128 per NAND String
87.5% Vertical Efficiency
Read Time (tR): 56 µs
Program Time (tProg): 484 µs
Die Read Speed: 571 MB/s
Die Write Speed: 66 MB/s
Endurance:
(up to)
3000 P/E Cycles
(100000 in SLC Mode)
Page Size: 16 KB
Block Size: 1344 Pages
Plane Size: 448 Blocks

DRAM Cache

Type: DDR4
Capacity: 1024 MB
(1x 1024 MB)

Performance

Sequential Read: 7,300 MB/s
Sequential Write: 6,300 MB/s
Random Read: 800,000 IOPS
Random Write: 1,100,000 IOPS
Endurance: 600 TBW
Warranty: 5 Years
MTBF: 1.8 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: approx. 300 GB
(288 GB Dynamic
+ 12 GB Static)
Speed when Cache Exhausted: approx. 1500 MB/s
Cache Folding Speed: 900 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: Yes

Notes

NAND Die:

Although this Die is a 4-plane design, most Kioxia BiCS5 NAND Dies used in most SSDs are dual planes design because of Yield and production cost.
And because of the die being dual-plane the Throughput is cut in half to 66 MB/s per die.
There is no CuA (Circuitry under Array) in the Dual-Plane variant.
Typical Endurance: 1700 P.E.C.
Rated Endurance: 5.000 (up to) P.E.C.

Apr 25th, 2024 11:53 EDT change timezone

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