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Acer FA100 128 GB (Micron B47R)

128 GB
Capacity
IG5216
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

Package
Package
SSD Controller
Controller
NAND Die
NAND Die
The Acer FA100 is a solid-state drive in the M.2 2280 form factor, launched on April 30th, 2021. It is available in capacities ranging from 128 GB to 2 TB. This page reports specifications for the 128 GB variant. With the rest of the system, the Acer FA100 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the IG5216 (Shasta+) from InnoGrit, a DRAM cache is not available. Acer has installed 176-layer TLC NAND flash on the FA100, the flash chips are made by Micron. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. The FA100 is rated for sequential read speeds of up to 950 MB/s and 650 MB/s write; random IOPS reach up to 51K for reads and 161K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Acer guarantees an endurance rating of 70 TBW, a relatively low value compared to other SSDs.

Solid-State-Drive

Capacity: 128 GB
Variants: 128 GB 256 GB 512 GB 1 TB 2 TB
Hardware Versions:
Overprovisioning: 8.8 GB / 7.4 %
Production: Active
Released: Apr 30th, 2021
Part Number: BL.9BWWA.117
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.4
Power Draw: 1.0 W (Idle)
Unknown (Avg)
1.8 W (Max)

Controller

Manufacturer: InnoGrit
Name: IG5216 (Shasta+)
Architecture: ARM 32-bit Cortex-R5
Core Count: Dual-Core
Frequency: 525 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 4 @ 1,066 MT/s
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: Micron
Name: B47R FortisFlash
Rebranded: (Rebranded by Biwin)
Type: TLC
Technology: 176-layer
Speed: 1200 MT/s .. 1600 MT/s
Capacity: Unknown
ONFI: 4.1
Topology: Replacement Gate
Die Size: 50 mm²
(10.2 Gbit/mm²)
Planes per Die: 4
Decks per Die: 2
Word Lines: 195 per NAND String
90.3% Vertical Efficiency
Read Time (tR): 56 µs
Program Time (tProg): 502 µs
Block Erase Time (tBERS): 15 ms
Die Read Speed: 1143 MB/s
Die Write Speed: 127 MB/s
Endurance:
(up to)
3000 P/E Cycles
(40000 in SLC Mode)
Page Size: 16 KB
Block Size: 2112 Pages
Plane Size: 550 Blocks

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: 950 MB/s
Sequential Write: 650 MB/s
Random Read: 51,000 IOPS
Random Write: 161,000 IOPS
Endurance: 70 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: No

Notes

Controller:

NAND Flash BUS: could be close to 1066 MT/s not confirmed though.

NAND Die:

This Flash can run safely at 1600 MT/s (800 MHz)
tPROG with overhead: ~ 533 µs (Avg 120 MB/s per die)

Jun 1st, 2024 17:31 EDT change timezone

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