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Apacer AS2280Q4 1 TB

1 TB
Capacity
Phison E16
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
Front
SSD Controller
Controller
NAND Die
NAND Die
The Apacer AS2280Q4 is a solid-state drive in the M.2 2280 form factor, launched on July 17th, 2019. It is available in capacities ranging from 500 GB to 2 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Apacer AS2280Q4 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the PS5016-E16-32 from Phison, a DRAM cache chip is available. Apacer has installed 96-layer TLC NAND flash on the AS2280Q4, the flash chips are made by Toshiba. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The AS2280Q4 is rated for sequential read speeds of up to 5,000 MB/s and 4,400 MB/s write; random IO reaches 750K IOPS for read and 750K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Apacer guarantees an endurance rating of 1650 TBW, a good value.

Solid-State-Drive

Capacity: 1 TB (1000 GB)
Variants: 500 GB 1 TB 2 TB
Overprovisioning: 92.7 GB / 10.0 %
Production: Active
Released: Jul 17th, 2019
Part Number: AP1TBAS2280Q4-1
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.3
Power Draw: 0.02 W (Idle)
Unknown (Avg)
6.7 W (Max)

Controller

Manufacturer: Phison
Name: PS5016-E16-32
Architecture: ARM 32-bit Cortex-R5
Core Count: Quad-Core
Frequency: 733 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 8 @ 800 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS4
Type: TLC
Technology: 96-layer
Speed: 533 MT/s .. 800 MT/s
Capacity: 4 chips @ 2 Tbit
Toggle: 3.0
Topology: Charge Trap
Process: 19 nm
Dies per Chip: 8 dies @ 256 Gbit
Planes per Die: 2
Decks per Die: 2
Word Lines: 109 per NAND String
88.1% Vertical Efficiency
Read Time (tR): 59 µs
Program Time (tProg): 625 µs
Die Read Speed: 551 MB/s
Die Write Speed: 56 MB/s
Endurance:
(up to)		 1500 P/E Cycles
(3000 in SLC Mode)
Page Size: 16 KB
Block Size: 1152 Pages
Plane Size: 1980 Blocks

DRAM Cache

Type: DDR4
Name: SK Hynix
Capacity: 1024 MB
(2x 512 MB)

Performance

Sequential Read: 5,000 MB/s
Sequential Write: 4,400 MB/s
Random Read: 750,000 IOPS
Random Write: 750,000 IOPS
Endurance: 1650 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.9
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: Yes

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Controller:

2 main cores using Cortex-R5 clocked at 733 MHz with CoXProcessor technology (one additional dual-core) Cortex-R5 clocked at 200MHz ~ 300MHz for better efficience.

NAND Die:

Read latency tR: 58 µs (ABL)
Performance:
tPROG (typical) - 2100 µs (MSB)
tR (typical) - 59 µs
tPROG (ower page) ~ 200 µs
Estimated tPROG between 625 ~ 975 µs
Jun 1st, 2024 16:27 EDT change timezone

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