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Gigabyte Aorus Gen5 10000 2 TB

2 TB
Capacity
Phison E26
Controller
TLC
Flash
PCIe 5.0 x4
Interface
M.2 2280
Form Factor
PCB Front
Tom's Hardware
PCB Front
PCB Back
Tom's Hardware
PCB Back
DRAM
Tom's Hardware
DRAM
Flash
Tom's Hardware
Flash
SSD Controller
Controller
NAND Die
NAND Die
The Gigabyte Aorus Gen5 10000 is a solid-state drive in the M.2 2280 form factor, launched on August 19th, 2022. It is available in capacities ranging from 1 TB to 4 TB. This page reports specifications for the 2 TB variant. With the rest of the system, the Gigabyte Aorus Gen5 10000 interfaces using a PCI-Express 5.0 x4 connection. The SSD controller is the PS5026-E26 from Phison, a DRAM cache chip is available. Gigabyte has installed 232-layer TLC NAND flash on the Aorus Gen5 10000, the flash chips are made by Micron. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. The cache is sized at 220 GB, once it is full, writes complete at 3500 MB/s. Copying data out of the SLC cache (folding) completes at 1400 MB/s. Thanks to support for the fast PCI-Express 5.0 interface, performance is excellent. The Aorus Gen5 10000 is rated for sequential read speeds of up to 10,000 MB/s and 9,500 MB/s write.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Gigabyte guarantees an endurance rating of 1400 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 2 TB (2000 GB)
Variants: 1 TB 2 TB 4 TB
Overprovisioning: 185.4 GB / 10.0 %
Production: Active
Released: Aug 19th, 2022
Part Number: Unknown
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 5.0 x4
Protocol: NVMe 1.4
Power Draw: 2.9 W (Idle)
6.7 W (Avg)
11.3 W (Max)

Controller

Manufacturer: Phison
Name: PS5026-E26
Architecture: ARM 32-bit Cortex-R5 + AndesCore 32-bit N25F RISC-V
Core Count: 5-Core
Foundry: TSMC
Process: 12 nm
Flash Channels: 8 @ 2,400 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Micron
Name: B58R FortisFlash
Part Number: NV066
Rebranded: MT29F4T08EMLCHD4-RES:C
Type: TLC
Technology: 232-layer
Speed: 2400 MT/s
Capacity: 4 chips @ 4 Tbit
ONFI: 5.0
Topology: Replacement Gate
Die Size: 70 mm²
(14.6 Gbit/mm²)
Dies per Chip: 4 dies @ 1 Tbit
Planes per Die: 6
Decks per Die: 2
Word Lines: 255 per NAND String
91.0% Vertical Efficiency
Read Time (tR): 61 µs
Program Time (tProg): 600 µs
Block Erase Time (tBERS): 15 ms
Die Read Speed: 1574 MB/s
Die Write Speed: 160 MB/s
Endurance:
(up to)
2500 P/E Cycles
Page Size: 16 KB
Block Size: 2784 Pages
Plane Size: 3402 Blocks

DRAM Cache

Type: LPDDR4
Capacity: 4096 MB
(2x 2048 MB)

Performance

Sequential Read: 10,000 MB/s
Sequential Write: 9,500 MB/s
Random Read: Unknown
Random Write: Unknown
Endurance: 1400 TBW
Warranty: 5 Years
MTBF: 1.6 Million Hours
Drive Writes Per Day (DWPD): 0.4
SLC Write Cache: approx. 220 GB
(dynamic only)
Speed when Cache Exhausted: approx. 3500 MB/s
Cache Folding Speed: 1400 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: Yes

Reviews

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Drive:

B58R dies probably running at 1600 MT/s

Controller:

This controller features a dual core Cortex-R5 as a primary cores, while a Tripple AndesCore 32-bit N25F RISC-V at 400-500 MHz act as a CoX Processor.

NAND Die:

2-Deck design with 116 word line per deck
Upper deck: 128-Gates
Lower Deck: 127-gates
Programming Throughput - not confirmed, calculated by estimated tPROG
tPROG - Estimated, not confirmed

Jun 1st, 2024 16:53 EDT change timezone

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