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Gigabyte UD Pro 512 GB

512 GB
Capacity
Phison S10
Controller
TLC
Flash
SATA 6 Gbps
Interface
2.5"
Form Factor
Back
Tom's Hardware
Back
Package
Tom's Hardware
Package
PCB Front
Tom's Hardware
PCB Front
PCB Back
Tom's Hardware
PCB Back
Flash
Tom's Hardware
Flash
DRAM
Tom's Hardware
DRAM
SSD Controller
Controller
NAND Die
NAND Die
The Gigabyte UD Pro is a solid-state drive in the 2.5" form factor, launched on May 11th, 2018. It is available in capacities ranging from 256 GB to 512 GB. This page reports specifications for the 512 GB variant. With the rest of the system, the Gigabyte UD Pro interfaces using a SATA 6 Gbps connection. The SSD controller is the PS3110-S10-X from Phison, a DRAM cache chip is available. Gigabyte has installed 64-layer TLC NAND flash on the UD Pro, the flash chips are made by Toshiba. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. The cache is sized at 15 GB. The UD Pro is rated for sequential read speeds of up to 530 MB/s and 500 MB/s write; random IOPS reach up to 80K for reads and 75K for writes.
At its launch, the SSD was priced at 110 USD. The warranty length is set to three years, which is above average, but shorter than the five years offered by many other vendors. Gigabyte guarantees an endurance rating of 200 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 512 GB
Variants: 256 GB 512 GB
Overprovisioning: 35.2 GB / 7.4 %
Production: Active
Released: May 11th, 2018
Price at Launch: 110 USD
Part Number: GP-GSTFS30512GTTD
Market: Consumer

Physical

Form Factor: 2.5"
Interface: SATA 6 Gbps
Protocol: AHCI
Power Draw: 0.13 W (Idle)
1.7 W (Avg)
2.5 W (Max)

Controller

Manufacturer: Phison
Name: PS3110-S10-X
Architecture: ARM 32-bit
Core Count: Quad-Core
Frequency: 200 MHz
Foundry: UMC
Process: 55 nm
Flash Channels: 8
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BICS3
Part Number: TG19G53AIV
Type: TLC
Technology: 64-layer
Speed: 533 MT/s
Capacity: 8 chips @ 512 Gbit
Toggle: 2.0
Topology: Charge Trap
Process: 19 nm
Die Size: 132 mm²
(3.9 Gbit/mm²)
Dies per Chip: 1 die @ 512 Gbit
Planes per Die: 2
Decks per Die: 2
Read Time (tR): 80 µs
Program Time (tProg): 695 µs
Die Read Speed: 400 MB/s
Die Write Speed: 46 MB/s
Endurance:
(up to)
3000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 768 Pages
Plane Size: 2732 Blocks

DRAM Cache

Type: DDR3L-1600 CL11
Name: KINGSTON D2516EC4BXGGB
Capacity: 512 MB
(1x 512 MB)
Organization: 4Gx16

Performance

Sequential Read: 530 MB/s
Sequential Write: 500 MB/s
Random Read: 80,000 IOPS
Random Write: 75,000 IOPS
Endurance: 200 TBW
Warranty: 3 Years
MTBF: 1.8 Million Hours
Drive Writes Per Day (DWPD): 0.4
SLC Write Cache: approx. 15 GB

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • Unknown
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Controller:

3 main cores using ARM 32-bit clocked at 200 MHz with co-processor technology (single-core).

NAND Die:

Read latency:
tR: 64µs (SBL)
tR: 80µs (ABL)
tPROG withoug Overhead: ~ 695µs (Avg) (~ 46 MB/s per die)
tPROG w/ ~25% Overhead: ~ 927µs (Avg) (~ 34.5 MB/s per die)

Jun 1st, 2024 17:07 EDT change timezone

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