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Inland TN446 512 GB

512 GB
Capacity
Phison E21T
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2230
Form Factor
SSD Controller
Controller
NAND Die
NAND Die
The Inland TN446 is a solid-state drive in the M.2 2230 form factor, launched in 2023. It is available in capacities ranging from 512 GB to 1 TB. This page reports specifications for the 512 GB variant. With the rest of the system, the Inland TN446 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the PS5021-E21T from Phison, a DRAM cache is not available. Inland has installed 176-layer TLC NAND flash on the TN446, the flash chips are made by Micron. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The TN446 is rated for sequential read speeds of up to 4,900 MB/s and 3,700 MB/s write; random IO reaches 900K IOPS for read and 300K for writes.
At its launch, the SSD was priced at 50 USD. The warranty length is set to 6 years, which is a very long warranty, better than most other drives on the market. Inland guarantees an endurance rating of 300 TBW, a relatively low value compared to other SSDs.

Solid-State-Drive

Capacity: 512 GB
Variants: 512 GB 1 TB
Overprovisioning: 35.2 GB / 7.4 %
Production: Active
Released: 2023
Price at Launch: 50 USD
Part Number: 547109
Market: Consumer

Physical

Form Factor: M.2 2230 (Single-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: Unknown

Controller

Manufacturer: Phison
Name: PS5021-E21T
Architecture: ARM 32-bit Cortex-R5
Core Count: Triple-Core
Frequency: 1,000 MHz
Foundry: TSMC
Process: 12 nm
Flash Channels: 4 @ 1,600 MT/s
Chip Enables: 4
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: Micron
Name: B47R FortisFlash
Type: TLC
Technology: 176-layer
Speed: 1200 MT/s .. 1600 MT/s
Capacity: 1 chip @ 4 Tbit
ONFI: 4.1
Topology: Replacement Gate
Die Size: 50 mm²
(10.2 Gbit/mm²)
Dies per Chip: 8 dies @ 512 Gbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 195 per NAND String
90.3% Vertical Efficiency
Read Time (tR): 56 µs
Program Time (tProg): 502 µs
Block Erase Time (tBERS): 15 ms
Die Read Speed: 1143 MB/s
Die Write Speed: 127 MB/s
Endurance:
(up to)
3000 P/E Cycles
(40000 in SLC Mode)
Page Size: 16 KB
Block Size: 2112 Pages
Plane Size: 550 Blocks

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: 4,900 MB/s
Sequential Write: 3,700 MB/s
Random Read: 900,000 IOPS
Random Write: 300,000 IOPS
Endurance: 300 TBW
Warranty: 6 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: Yes

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Controller:

1 main core using Cortex-R5 with CoXProcessor technology running at 980 ~ 1000 MHz (one additional dual-core) Cortex-R5 clocked at a lower clock for better efficiency

NAND Die:

This Flash can run safely at 1600 MT/s (800 MHz)
tPROG with overhead: ~ 533 µs (Avg 120 MB/s per die)

Jun 1st, 2024 19:01 EDT change timezone

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