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Intel 760p 2 TB

2 TB
Capacity
SM2262G
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor
Package
Package
SSD Controller
Controller
NAND Die
NAND Die
The Intel 760p is a solid-state drive in the M.2 2280 form factor, launched on January 24th, 2018. It is available in capacities ranging from 128 GB to 2 TB. This page reports specifications for the 2 TB variant. With the rest of the system, the Intel 760p interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the SM2262G from Silicon Motion, a DRAM cache chip is available. Intel has installed 64-layer TLC NAND flash on the 760p, the flash chips are made by Micron. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. The cache is sized at 24 GB. The 760p is rated for sequential read speeds of up to 3,230 MB/s and 1,625 MB/s write; random IOPS reach up to 340K for reads and 275K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Intel guarantees an endurance rating of 1152 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 2 TB (2048 GB)
Variants: 128 GB 256 GB 512 GB 1 TB 2 TB
Overprovisioning: 140.7 GB / 7.4 %
Production: Active
Released: Jan 24th, 2018
Part Number: SSDPEKKW020T8X1
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: 0.07 W (Idle)
Unknown (Avg)
Unknown (Max)

Controller

Manufacturer: Silicon Motion
Name: SM2262G
Architecture: ARM 32-bit Cortex-R5
Core Count: Dual-Core
Frequency: 575 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 8 @ 800 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Micron
Name: B17A FortisFlash
Type: TLC
Technology: 64-layer
Speed: 50 MT/s .. 667 MT/s
Capacity: 4 chips @ 4 Tbit
ONFI: 4.0
Topology: Floating Gate
Process: 16 nm
Die Size: 108 mm²
(4.7 Gbit/mm²)
Dies per Chip: 8 dies @ 512 Gbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 74 per NAND String
86.5% Vertical Efficiency
Read Time (tR): 88 µs
Program Time (tProg): 930 µs
Block Erase Time (tBERS): 15 ms
Die Read Speed: 727 MB/s
Die Write Speed: 69 MB/s
Endurance:
(up to)
3000 P/E Cycles
(40000 in SLC Mode)
Page Size: 16 KB
Block Size: 2304 Pages
Plane Size: 504 Blocks

DRAM Cache

Type: DDR4
Name: Micron / Nanya
Capacity: 2048 MB
(2x 1024 MB)
Organization: 8Gx16

Performance

Sequential Read: 3,230 MB/s
Sequential Write: 1,625 MB/s
Random Read: 340,000 IOPS
Random Write: 275,000 IOPS
Endurance: 1152 TBW
Warranty: 5 Years
MTBF: 1.6 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: approx. 24 GB

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
  • TCG Opal
  • TCG Pyrite
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Drive:

These drives make use of a small Static pSLC Cache in order to improve performance, reliability and endurance.

NAND Die:

tPROG with some Overhead: ~ 930µs (Avg)
Effective Program page time without VPP : 1900μs(TYP) ( ~ 33 MB/s)

Jun 1st, 2024 16:01 EDT change timezone

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