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Klevv CRAS C920 1 TB

1 TB
Capacity
Phison E18
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
Package
Package
PCB Back
Back 2 Gaming
PCB Back
Flash
Back 2 Gaming
Flash
SSD Controller
Controller
The Klevv CRAS C920 is a solid-state drive in the M.2 2280 form factor, launched on June 16th, 2021. It is available in capacities ranging from 1 TB to 2 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Klevv CRAS C920 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the PS5018-E18-41 from Phison, a DRAM cache chip is available. Klevv has installed 96-layer TLC NAND flash on the CRAS C920, the flash chips are made by Micron. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. The cache is sized at 333 GB. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The CRAS C920 is rated for sequential read speeds of up to 7,000 MB/s and 5,500 MB/s write.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Klevv guarantees an endurance rating of 700 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 1 TB (1024 GB)
Variants: 1 TB 2 TB
Overprovisioning: 70.3 GB / 7.4 %
Production: Active
Released: Jun 16th, 2021
Part Number: K01TBM2SP0-C92
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: Unknown

Controller

Manufacturer: Phison
Name: PS5018-E18-41
Architecture: ARM 32-bit Cortex-R5
Core Count: 5-Core
Frequency: 1,000 MHz
Foundry: TSMC
Process: 12 nm
Flash Channels: 8 @ 1,600 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Micron
Name: B27B FortisFlash
Part Number: IA7BG64AIA
Type: TLC
Technology: 96-layer
Speed: 533 MT/s .. 1200 MT/s
Capacity: 4 chips @ 2 Tbit
ONFI: 4.1
Topology: Floating Gate
Dies per Chip: 4 dies @ 512 Gbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 108 per NAND String
88.9% Vertical Efficiency
Read Time (tR): 87 µs
Program Time (tProg): 800 µs
Block Erase Time (tBERS): 15 ms
Die Write Speed: 84 MB/s
Endurance:
(up to)
3000 P/E Cycles
(40000 in SLC Mode)
Page Size: 16 KB
Block Size: 3456 Pages
Plane Size: 338 Blocks

DRAM Cache

Type: DDR4-2666 CL16
Name: H5AN8G6NCJR-VKC
Capacity: 1024 MB
(1x 1024 MB)
Organization: 8Gx16

Performance

Sequential Read: 7,000 MB/s
Sequential Write: 5,500 MB/s
Random Read: Unknown
Random Write: Unknown
Endurance: 700 TBW
Warranty: 5 Years
Drive Writes Per Day (DWPD): 0.4
SLC Write Cache: approx. 333 GB
(dynamic only)

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: Yes

Reviews

Notes

Controller:

3 main cores using Cortex-R5 clocked at 1000 MHz with CoXProcessor technology (one additional dual-core) Cortex-R5 clocked at a lower clock for better efficience. (200 - 300 MHz)

NAND Die:

tPROG - 800 µs (withouh Vpp)
tPROG w/ ~ 25% Overhead: ~ 914 µs (Avg 70 MB/s per each die)

Jun 1st, 2024 16:58 EDT change timezone

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