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Lexar NM700 1 TB

1 TB
Capacity
88SS1092
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor
Package
Tom's Hardware
Package
Back
Tom's Hardware
Back
PCB Front
Tom's Hardware
PCB Front
DRAM
Tom's Hardware
DRAM
Flash
Tom's Hardware
Flash
SSD Controller
Controller
NAND Die
NAND Die
The Lexar NM700 is a solid-state drive in the M.2 2280 form factor, launched on May 25th, 2020. It is available in capacities ranging from 256 GB to 1 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Lexar NM700 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the 88SS1092 Eldora Plus from Marvell, a DRAM cache chip is available. Lexar has installed 64-layer TLC NAND flash on the NM700, the flash chips are made by Samsung. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. The cache is sized at 360 GB, once it is full, writes complete at 580 MB/s. The NM700 is rated for sequential read speeds of up to 3,500 MB/s and 2,000 MB/s write; random IOPS reach up to 293K for reads and 272K for writes.
At its launch, the SSD was priced at 139 USD. The warranty length is set to five years, which is an excellent warranty period. Lexar guarantees an endurance rating of 600 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 1 TB (1024 GB)
Variants: 256 GB 512 GB 1 TB
Overprovisioning: 70.3 GB / 7.4 %
Production: Active
Released: May 25th, 2020
Price at Launch: 139 USD
Part Number: LNM700-1TRBNA
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: 1.3 W (Idle)
4.7 W (Avg)
6.6 W (Max)

Controller

Manufacturer: Marvell
Name: 88SS1092 Eldora Plus
Architecture: ARM 32-bit Cortex-R5
Core Count: Triple-Core
Frequency: 500 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 8 @ 533 MT/s
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V4
Rebranded: (Rebranded by Lexar/LongSys)
Type: TLC
Technology: 64-layer
Speed: 1000 MT/s
Capacity: 2 chips @ 4 Tbit
Toggle: 3.0
Topology: Charge Trap
Process: 20 nm
Die Size: 128 mm²
(4.0 Gbit/mm²)
Dies per Chip: 8 dies @ 512 Gbit
Planes per Die: 2
Decks per Die: 1
Word Lines: 72 per NAND String
88.9% Vertical Efficiency
Read Time (tR): 45 µs
Program Time (tProg): 700 µs
Block Erase Time (tBERS): 3.5 ms
Endurance:
(up to)
7000 P/E Cycles
(20000 in SLC Mode)
Page Size: 16 KB
Block Size: 768 Pages
Plane Size: 5748 Blocks

DRAM Cache

Type: LPDDR3-1866 CL13
Name: NT6CL256T32CM-H1
Capacity: 1024 MB
(1x 1024 MB)
Organization: 8Gx32

Performance

Sequential Read: 3,500 MB/s
Sequential Write: 2,000 MB/s
Random Read: 293,000 IOPS
Random Write: 272,000 IOPS
Endurance: 600 TBW
Warranty: 5 Years
MTBF: 3.0 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: approx. 360 GB
(dynamic only)
Speed when Cache Exhausted: approx. 580 MB/s

Features

TRIM: Yes
SMART: No
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Drive:

TLC Write speeds post pSLC Cache: ~ 580 MB/s (Avg)
TLC Write speeds w/ datafolding: ~ 300 MB/s (Avg)

Jun 1st, 2024 17:39 EDT change timezone

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