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Memblaze PBlaze6 6530 7.5 TB

7.5 TB
Capacity
NVMe3108
Controller
TLC
Flash
PCIe 4.0 x4
Interface
U.2
Form Factor
SSD Controller
Controller
NAND Die
NAND Die
The Memblaze PBlaze6 6530 is a solid-state drive in the U.2 form factor, launched on May 1st, 2021. It is available in capacities ranging from 1.9 TB to 7.5 TB. This page reports specifications for the 7.5 TB variant. With the rest of the system, the Memblaze PBlaze6 6530 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the PM8640 NVMe3108 Edison from Microchip Flashtech Microsemi, a DRAM cache chip is available. Memblaze has installed 176-layer TLC NAND flash on the PBlaze6 6530, the flash chips are made by Micron. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The PBlaze6 6530 is rated for sequential read speeds of up to 6,400 MB/s and 4,800 MB/s write; random IO reaches 1100K IOPS for read and 230K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Memblaze guarantees an endurance rating of 21024 TBW, a high value.

Solid-State-Drive

Capacity: 7.5 TB (7680 GB)
Variants: 1.9 TB 3.8 TB 7.5 TB
Overprovisioning: 1039.4 GB / 14.5 %
Production: Active
Released: May 1st, 2021
Part Number: P6530DT0768M00
Market: Enterprise

Physical

Form Factor: U.2
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: Unknown

Controller

Manufacturer: Microchip Flashtech Microsemi
Name: PM8640 NVMe3108 Edison
Architecture: ARM 64-bit Cortex-A53 + CoreLink CCN-502 + CoreLink GIC-500
Core Count: 6-Core
Foundry: TSMC FinFET
Process: 16 nm
Flash Channels: 8 @ 1,200 MT/s
Chip Enables: 16
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Micron
Name: B47R FortisMax
Type: TLC
Technology: 176-layer
Speed: 1200 MT/s .. 1600 MT/s
Capacity: Unknown
ONFI: 4.1
Topology: Replacement Gate
Die Size: 50 mm²
(10.2 Gbit/mm²)
Planes per Die: 4
Decks per Die: 2
Word Lines: 195 per NAND String
90.3% Vertical Efficiency
Program Time (tProg): 492 µs
Block Erase Time (tBERS): 15 ms
Die Write Speed: 130 MB/s
Endurance:
(up to)
10000 P/E Cycles
(40000 in SLC Mode)
Page Size: 16 KB
Block Size: 2112 Pages
Plane Size: 550 Blocks

DRAM Cache

Type: DDR4
Capacity: Unknown

Performance

Sequential Read: 6,400 MB/s
Sequential Write: 4,800 MB/s
Random Read: 1,100,000 IOPS
Random Write: 230,000 IOPS
Endurance: 21024 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 1.5
Write Cache: N/A

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: Yes
Encryption:
  • AES-256
  • TCG Opal
RGB Lighting: No
PS5 Compatible: No

Notes

NAND Die:

This Flash can run safely at 1600 MT/s (800 MHz)
tPROG with overhead: ~ 533 µs (Avg 120 MB/s per die)

Jun 1st, 2024 17:57 EDT change timezone

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