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MLD M500 1 TB

1 TB
Capacity
Phison E21T
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
Front
Package
Package
SSD Controller
Controller
NAND Die
NAND Die
The MLD M500 is a solid-state drive in the M.2 2280 form factor, launched in 2023. It is only available in the 1 TB capacity listed on this page. With the rest of the system, the MLD M500 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the PS5021-E21T from Phison, a DRAM cache is not available. MLD has installed 176-layer TLC NAND flash on the M500, the flash chips are made by SK Hynix. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The M500 is rated for sequential read speeds of up to 7,000 MB/s and 4,700 MB/s write.
At its launch, the SSD was priced at 59 USD. The TBW rating for the MLD M500 1 TB is unknown.

Solid-State-Drive

Capacity: 1 TB (1024 GB)
Overprovisioning: 70.3 GB / 7.4 %
Production: Active
Released: 2023
Price at Launch: 59 USD
Part Number: MLD M500 NVMe SSD
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: Unknown

Controller

Manufacturer: Phison
Name: PS5021-E21T
Architecture: ARM 32-bit Cortex-R5
Core Count: Triple-Core
Frequency: 1,000 MHz
Foundry: TSMC
Process: 12 nm
Flash Channels: 4 @ 1,600 MT/s
Chip Enables: 4
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: SK Hynix
Name: V7
Type: TLC
Technology: 176-layer
Speed: 1600 MT/s
Capacity: 2 chips @ 4 Tbit
Toggle: 5.0
Topology: Charge Trap
Die Size: 47 mm²
(10.9 Gbit/mm²)
Dies per Chip: 8 dies @ 512 Gbit
Planes per Die: 4
Word Lines: 196 per NAND String
89.8% Vertical Efficiency
Read Time (tR): 50 µs
Program Time (tProg): 380 µs
Die Read Speed: 1280 MB/s
Die Write Speed: 168 MB/s
Endurance:
(up to)		 3000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 4224 Pages
Plane Size: 1084 Blocks

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: 7,000 MB/s
Sequential Write: 4,700 MB/s
Random Read: Unknown
Random Write: Unknown
Endurance: Unknown
Warranty: Unknown
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • Unknown
RGB Lighting: No
PS5 Compatible: Yes

Notes

Controller:

1 main core using Cortex-R5 with CoXProcessor technology running at 980 ~ 1000 MHz (one additional dual-core) Cortex-R5 clocked at a lower clock for better efficiency

NAND Die:

Endurance: 1.500 to 3.000 P.E.C.
tPROG withouth Overhead: ~ 380 µs (accounting for ~ 168 MB/s of throughput per die)
tPROG w/ +/- 25% Overhead: ~ 507 µs (accounting for ~ 126 MB/s of throughput per die)
NAND string : H25G9TC18488 NAND MaxPE cycles: 1500 NAND Freq : 1200 Channel number: 4 CE number : 4 Total Bank: 16 Flash Type: TLC Blocks/CE: 1084 Pages/Block: 4224 Page Size
Jun 1st, 2024 16:33 EDT change timezone

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