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MSI Spatium M450 1 TB (Phison E19 + Kioxia BiCS5)

1 TB
Capacity
Phison E19T
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

PCB Front
PCB Front
SSD Controller
Controller
The MSI Spatium M450 is a solid-state drive in the M.2 2280 form factor, launched in February 2022. It is only available in the 1 TB capacity listed on this page. With the rest of the system, the MSI Spatium M450 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the PS5019-E19-35 from Phison, a DRAM cache is not available. MSI has installed 112-layer TLC NAND flash on the Spatium M450, the flash chips are made by Toshiba. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. Copying data out of the SLC cache (folding) completes at 1100 MB/s. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The Spatium M450 is rated for sequential read speeds of up to 3,600 MB/s and 3,000 MB/s write; random IOPS reach up to 420K for reads and 550K for writes.
At its launch, the SSD was priced at 115 USD. The warranty length is set to five years, which is an excellent warranty period. MSI guarantees an endurance rating of 600 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 1 TB (1000 GB)
Hardware Versions:
Overprovisioning: 92.7 GB / 10.0 %
Production: Active
Released: Feb 2022
Price at Launch: 115 USD
Part Number: SPATIUM-M450-NVMe-M.2
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: Unknown

Controller

Manufacturer: Phison
Name: PS5019-E19-35
Architecture: ARM 32-bit Cortex-R5
Core Count: Dual-Core
Frequency: 667 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 4 @ 1,200 MT/s
Chip Enables: 4
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS5
Part Number: TA7BG95AYV
Type: TLC
Technology: 112-layer
Speed: 1200 MT/s
Capacity: 4 chips @ 2 Tbit
Toggle: 4.0
Topology: Charge Trap
Dies per Chip: 4 dies @ 512 Gbit
Planes per Die: 2
Word Lines: 128 per NAND String
87.5% Vertical Efficiency
Read Time (tR): 56 µs
Program Time (tProg): 484 µs
Die Read Speed: 571 MB/s
Die Write Speed: 66 MB/s
Endurance:
(up to)
3000 P/E Cycles
(100000 in SLC Mode)
Page Size: 16 KB
Block Size: 1344 Pages
Plane Size: 448 Blocks

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: 3,600 MB/s
Sequential Write: 3,000 MB/s
Random Read: 420,000 IOPS
Random Write: 550,000 IOPS
Endurance: 600 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: Yes
Cache Folding Speed: 1100 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • TCG Pyrite
RGB Lighting: No
PS5 Compatible: Yes

Notes

Controller:

1 main core using Cortex-R5 with CoXProcessor technology (one additional core) Cortex-R5 clocked at a lower clock for better efficience.

NAND Die:

Although this Die is a 4-plane design, most Kioxia BiCS5 NAND Dies used in most SSDs are dual planes design because of Yield and production cost.
And because of the die being dual-plane the Throughput is cut in half to 66 MB/s per die.
There is no CuA (Circuitry under Array) in the Dual-Plane variant.
Typical Endurance: 1700 P.E.C.
Rated Endurance: 3.000 to 5.000 (up to) P.E.C.

Jun 1st, 2024 17:53 EDT change timezone

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