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Mushkin Gamma 1 TB

1 TB
Capacity
Phison E18
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
PCB Front
Nikktech
PCB Front
PCB Back
Nikktech
PCB Back
SSD Controller
Controller
The Mushkin Gamma is a solid-state drive in the M.2 2280 form factor, launched on March 31st, 2021. It is available in capacities ranging from 1 TB to 4 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Mushkin Gamma interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the PS5018-E18-41 from Phison, a DRAM cache chip is available. Mushkin has installed 96-layer TLC NAND flash on the Gamma, the flash chips are made by Micron. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. The cache is sized at 112 GB. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The Gamma is rated for sequential read speeds of up to 7,175 MB/s and 6,800 MB/s write; random IO reaches 640K IOPS for read and 630K for writes.
At its launch, the SSD was priced at 189 USD. The warranty length is set to five years, which is an excellent warranty period. Mushkin guarantees an endurance rating of 700 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 1 TB (1000 GB)
Variants: 1 TB 2 TB 4 TB
Overprovisioning: 92.7 GB / 10.0 %
Production: Active
Released: Mar 31st, 2021
Price at Launch: 189 USD
Part Number: MKNSSDGA1TB-D8
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: Unknown

Controller

Manufacturer: Phison
Name: PS5018-E18-41
Architecture: ARM 32-bit Cortex-R5
Core Count: 5-Core
Frequency: 1,000 MHz
Foundry: TSMC
Process: 12 nm
Flash Channels: 8 @ 1,600 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Micron
Name: B27B FortisFlash
Part Number: IA7BG64AIA
Type: TLC
Technology: 96-layer
Speed: 533 MT/s .. 1200 MT/s
Capacity: 8 chips @ 2 Tbit
ONFI: 4.1
Topology: Floating Gate
Dies per Chip: 4 dies @ 512 Gbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 108 per NAND String
88.9% Vertical Efficiency
Read Time (tR): 87 µs
Program Time (tProg): 800 µs
Block Erase Time (tBERS): 15 ms
Die Write Speed: 84 MB/s
Endurance:
(up to)
3000 P/E Cycles
(40000 in SLC Mode)
Page Size: 16 KB
Block Size: 3456 Pages
Plane Size: 338 Blocks

DRAM Cache

Type: DDR4-2666 CL19
Name: SK Hynix H5AN8G6NCJR-VKC
Capacity: 2048 MB
(2x 1024 MB)
Organization: 8Gx16

Performance

Sequential Read: 7,175 MB/s
Sequential Write: 6,800 MB/s
Random Read: 640,000 IOPS
Random Write: 630,000 IOPS
Endurance: 700 TBW
Warranty: 5 Years
MTBF: 1.6 Million Hours
Drive Writes Per Day (DWPD): 0.4
SLC Write Cache: approx. 112 GB
(dynamic only)

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-128
  • AES-256
RGB Lighting: No
PS5 Compatible: Yes

Reviews

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Controller:

3 main cores using Cortex-R5 clocked at 1000 MHz with CoXProcessor technology (one additional dual-core) Cortex-R5 clocked at a lower clock for better efficience. (200 - 300 MHz)

NAND Die:

tPROG - 800 µs (withouh Vpp)
tPROG w/ ~ 25% Overhead: ~ 914 µs (Avg 70 MB/s per each die)

Jun 1st, 2024 16:50 EDT change timezone

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