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Neo Forza NFP495 2 TB

2 TB
Capacity
TC2201
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
SSD Controller
Controller
NAND Die
NAND Die
The Neo Forza NFP495 is a solid-state drive in the M.2 2280 form factor, launched in October 2023. It is available in capacities ranging from 1 TB to 4 TB. This page reports specifications for the 2 TB variant. With the rest of the system, the Neo Forza NFP495 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the TC2201 from TenaFE, a DRAM cache is not available. Neo Forza has installed 232-layer TLC NAND flash on the NFP495, the flash chips are made by YMTC. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The NFP495 is rated for sequential read speeds of up to 7,500 MB/s and 6,500 MB/s write; random IO reaches 450K IOPS for read and 650K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Neo Forza guarantees an endurance rating of 1400 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 2 TB (2048 GB)
Variants: 1 TB 2 TB 4 TB
Overprovisioning: 140.7 GB / 7.4 %
Production: Active
Released: Oct 2023
Part Number: Unknown
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: Unknown

Controller

Manufacturer: TenaFE
Name: TC2201
Architecture: ARM 32-bit Cortex-M7
Core Count: Dual-Core
Foundry: TSMC FinFET
Process: 12 nm
Flash Channels: 4 @ 2,400 MT/s
Chip Enables: 4
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: YMTC
Name: Xtacking 3.0 (EET1A)
Type: TLC
Technology: 232-layer
Speed: 2400 MT/s
Capacity: 4 chips @ 4 Tbit
Topology: Charge Trap
Die Size: 68 mm²
(15.1 Gbit/mm²)
Dies per Chip: 4 dies @ 1 Tbit
Planes per Die: 6
Decks per Die: 2
Word Lines: 253 per NAND String
91.7% Vertical Efficiency
Page Size: 16 KB

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: 7,500 MB/s
Sequential Write: 6,500 MB/s
Random Read: 450,000 IOPS
Random Write: 650,000 IOPS
Endurance: 1400 TBW
Warranty: 5 Years
Drive Writes Per Day (DWPD): 0.4
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • Unknown
RGB Lighting: No
PS5 Compatible: Yes

Notes

NAND Die:

Wordline pitch - 48nm
Bitline pitch - 39nm

Jun 1st, 2024 15:11 EDT change timezone

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