Multiple hardware versions found.
Performance could vary due to unannounced flash/controller changes.
Capacity: | 1 TB (1000 GB) |
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Variants: | 1 TB 2 TB |
Hardware Versions: | |
Overprovisioning: | 92.7 GB / 10.0 % |
Production: | Active |
Released: | 2022 |
Price at Launch: | 207 USD |
Part Number: | NT01NV7000-1T0-E4X |
Market: | Consumer |
Form Factor: | M.2 2280 (Double-Sided) |
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Interface: | PCIe 4.0 x4 |
Protocol: | NVMe 1.4 |
Power Draw: |
0.73 W (Idle) 4.2 W (Avg) 5.5 W (Max) |
Manufacturer: | InnoGrit |
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Name: | IG5236 (Rainier) |
Architecture: | ARM 32-bit Cortex-R5 |
Core Count: | Quad-Core |
Frequency: | 667 MHz |
Foundry: | TSMC FinFET |
Process: | 12 nm |
Flash Channels: | 8 @ 1,200 MT/s |
Chip Enables: | 4 |
Controller Features: | DRAM (enabled) |
Manufacturer: | SK Hynix |
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Name: | V6 |
Type: | TLC |
Technology: | 128-layer |
Speed: | 1400 MT/s |
Capacity: | 4 chips @ 1 Tbit |
Toggle: | 4.0 |
Topology: | Charge Trap |
Die Size: | 63 mm² (8.1 Gbit/mm²) |
Dies per Chip: | 2 dies @ 512 Gbit |
Planes per Die: | 4 |
Decks per Die: | 2 |
Word Lines: |
147 per NAND String
87.1% Vertical Efficiency |
Endurance: (up to) |
3000 P/E Cycles |
Page Size: | 16 KB |
Block Size: | 1536 Pages |
Plane Size: | 722 Blocks |
Type: | DDR4 |
---|---|
Capacity: |
1024 MB
(2x 512 MB) |
Organization: | 4Gx16 |
Sequential Read: | 7,200 MB/s |
---|---|
Sequential Write: | 5,500 MB/s |
Random Read: | 460,000 IOPS |
Random Write: | 920,000 IOPS |
Endurance: | 640 TBW |
Warranty: | 5 Years |
MTBF: | 2.0 Million Hours |
Drive Writes Per Day (DWPD): | 0.4 |
SLC Write Cache: |
approx. 330 GB
(dynamic only) |
TRIM: | Yes |
---|---|
SMART: | Yes |
Power Loss Protection: | No |
Encryption: |
|
RGB Lighting: | No |
PS5 Compatible: | Yes |
NAND Die:Each die has 7 SGSs with 3 SGDs. |