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Patriot Viper VPR100 512 GB

512 GB
Capacity
Phison E12
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

Package
Package
PCB Front
Nikktech
PCB Front
PCB Back
Nikktech
PCB Back
SSD Controller
Controller
NAND Die
NAND Die
The Patriot Viper VPR100 was a solid-state drive in the M.2 2280 form factor, launched on December 6th, 2019, that is no longer in production. It was available in capacities ranging from 256 GB to 2 TB. This page reports specifications for the 512 GB variant. With the rest of the system, the Patriot Viper VPR100 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the PS5012-E12-27 from Phison, a DRAM cache chip is available. Patriot has installed 64-layer TLC NAND flash on the Viper VPR100, the flash chips are made by Toshiba. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly, once it is full, writes complete at 1000 MB/s. The Viper VPR100 is rated for sequential read speeds of up to 3,300 MB/s and 2,100 MB/s write; random IOPS reach up to 700K for reads and 400K for writes.
At its launch, the SSD was priced at 111 USD. The warranty length is set to five years, which is an excellent warranty period. Patriot guarantees an endurance rating of 800 TBW, a good value.

Solid-State-Drive

Capacity: 512 GB
Variants: 256 GB 512 GB 1 TB 2 TB
Overprovisioning: 35.2 GB / 7.4 %
Production: End-of-life
Released: Dec 6th, 2019
Price at Launch: 111 USD
Part Number: VPR100-512GM28H
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: Unknown

Controller

Manufacturer: Phison
Name: PS5012-E12-27
Architecture: ARM 32-bit Cortex-R5
Core Count: Quad-Core
Frequency: 667 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 8 @ 667 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS3
Part Number: TA7AG55AIV
Type: TLC
Technology: 64-layer
Speed: 533 MT/s
Capacity: 4 chips @ 1 Tbit
ONFI: 3.2
Toggle: 2.0
Topology: Charge Trap
Process: 19 nm
Dies per Chip: 4 dies @ 256 Gbit
Planes per Die: 2
Decks per Die: 2
Read Time (tR): 80 µs
Program Time (tProg): 695 µs
Die Read Speed: 400 MB/s
Die Write Speed: 46 MB/s
Endurance:
(up to)
3000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 768 Pages
Plane Size: 1478 Blocks

DRAM Cache

Type: DDR4-2400 CL17
Name: SK Hynix H5AN4G6NBJR-UHC
Capacity: 512 MB
(1x 512 MB)
Organization: 4Gx8

Performance

Sequential Read: 3,300 MB/s
Sequential Write: 2,100 MB/s
Random Read: 700,000 IOPS
Random Write: 400,000 IOPS
Endurance: 800 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 0.9
SLC Write Cache: Yes
Speed when Cache Exhausted: approx. 1000 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: No

Reviews

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Drive:

NAND Flash might have been updated with BiCS4 and controller with Phison's E12s.

Controller:

2 main cores using Cortex-R5 clocked at 667 MHz with CoXProcessor technology (one additional dual-core) Cortex-R5 clocked at a lower clock for better efficience.

NAND Die:

Read latency:
tR: 64µs (SBL)
tR: 80µs (ABL)

Jun 1st, 2024 17:50 EDT change timezone

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