Report an Error

Plextor M10P(GN) 512 GB

512 GB
Capacity
IG5236
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
SSD Controller
Controller
NAND Die
NAND Die
The Plextor M10P(GN) is a solid-state drive in the M.2 2280 form factor, launched on July 11th, 2021. It is available in capacities ranging from 512 GB to 2 TB. This page reports specifications for the 512 GB variant. With the rest of the system, the Plextor M10P(GN) interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the IG5236 (Rainier) from InnoGrit, a DRAM cache chip is available. Plextor has installed 96-layer TLC NAND flash on the M10P(GN), the flash chips are made by Toshiba. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The M10P(GN) is rated for sequential read speeds of up to 7,000 MB/s and 4,000 MB/s write; random IOPS reach up to 650K for reads and 530K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Plextor guarantees an endurance rating of 320 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 512 GB
Variants: 512 GB 1 TB 2 TB
Overprovisioning: 35.2 GB / 7.4 %
Production: Active
Released: Jul 11th, 2021
Part Number: PX-512 M10PGN
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: Unknown (Idle)
Unknown (Avg)
9.6 W (Max)

Controller

Manufacturer: InnoGrit
Name: IG5236 (Rainier)
Architecture: ARM 32-bit Cortex-R5
Core Count: Quad-Core
Frequency: 667 MHz
Foundry: TSMC FinFET
Process: 12 nm
Flash Channels: 8 @ 1,200 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS4
Type: TLC
Technology: 96-layer
Speed: 533 MT/s .. 800 MT/s
Capacity: 2 chips @ 2 Tbit
Toggle: 3.0
Topology: Charge Trap
Process: 19 nm
Dies per Chip: 8 dies @ 256 Gbit
Planes per Die: 2
Decks per Die: 2
Word Lines: 109 per NAND String
88.1% Vertical Efficiency
Read Time (tR): 59 µs
Program Time (tProg): 625 µs
Die Read Speed: 551 MB/s
Die Write Speed: 56 MB/s
Endurance:
(up to)
1500 P/E Cycles
(3000 in SLC Mode)
Page Size: 16 KB
Block Size: 1152 Pages
Plane Size: 1980 Blocks

DRAM Cache

Type: DDR4
Capacity: 512 MB

Performance

Sequential Read: 7,000 MB/s
Sequential Write: 4,000 MB/s
Random Read: 650,000 IOPS
Random Write: 530,000 IOPS
Endurance: 320 TBW
Warranty: 5 Years
MTBF: 2.5 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: Yes

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Drive:

It could be using 512Gb BiCS4 dies instead as well.

NAND Die:

Read latency tR: 58 µs (ABL)
Performance:
tPROG (typical) - 2100 µs (MSB)
tR (typical) - 59 µs
tPROG (ower page) ~ 200 µs
Estimated tPROG between 625 ~ 975 µs

Jun 1st, 2024 18:23 EDT change timezone

New Forum Posts

Popular Reviews

Controversial News Posts