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Plextor M10P(Y) 2 TB

2 TB
Capacity
IG5236
Controller
TLC
Flash
PCIe 4.0 x4
Interface
Add-In Card
Form Factor
Package
CDR Labs
Package
PCB Front
CDR Labs
PCB Front
PCB Back
CDR Labs
PCB Back
SSD Controller
Controller
NAND Die
NAND Die
The Plextor M10P(Y) is a solid-state drive in the Add-In Card form factor, launched on July 11th, 2021. It is available in capacities ranging from 512 GB to 2 TB. This page reports specifications for the 2 TB variant. With the rest of the system, the Plextor M10P(Y) interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the IG5236 (Rainier) from InnoGrit, a DRAM cache chip is available. Plextor has installed 96-layer TLC NAND flash on the M10P(Y), the flash chips are made by Toshiba. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are handled more quickly. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The M10P(Y) is rated for sequential read speeds of up to 7,000 MB/s and 5,000 MB/s write; random IO reaches 650K IOPS for read and 550K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Plextor guarantees an endurance rating of 1280 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 2 TB (2048 GB)
Variants: 512 GB 1 TB 2 TB
Overprovisioning: 140.7 GB / 7.4 %
Production: Active
Released: Jul 11th, 2021
Part Number: PX-2T M10PY
Market: Consumer

Physical

Form Factor: Add-In Card (Single-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: Unknown (Idle)
Unknown (Avg)
15.6 W (Max)

Controller

Manufacturer: InnoGrit
Name: IG5236 (Rainier)
Architecture: ARM 32-bit Cortex-R5
Core Count: Quad-Core
Frequency: 667 MHz
Foundry: TSMC FinFET
Process: 12 nm
Flash Channels: 8 @ 1,200 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS4
Part Number: TH58LKT3T2MBAEG
Type: TLC
Technology: 96-layer
Speed: 800 MT/s
Capacity: 2 chips @ 8 Tbit
ONFI: 4.0
Toggle: 3.0
Topology: Charge Trap
Process: 19 nm
Die Size: 86 mm²
(6.0 Gbit/mm²)
Dies per Chip: 16 dies @ 512 Gbit
Planes per Die: 2
Decks per Die: 2
Word Lines: 109 per NAND String
88.1% Vertical Efficiency
Read Time (tR): 58 µs
Program Time (tProg): 561 µs
Die Read Speed: 551 MB/s
Die Write Speed: 57 MB/s
Endurance:
(up to)
3000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 1152 Pages
Plane Size: 1822 Blocks

DRAM Cache

Type: DDR4-3200
Name: Micron MT40A512M16TB-062E:J (FBGA: D9WWP)
Capacity: 2048 MB
(2x 1024 MB)
Organization: 8Gx16

Performance

Sequential Read: 7,000 MB/s
Sequential Write: 5,000 MB/s
Random Read: 650,000 IOPS
Random Write: 550,000 IOPS
Endurance: 1280 TBW
Warranty: 5 Years
MTBF: 2.5 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: Yes
PS5 Compatible: No

Reviews

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

NAND Die:

Read latency tR: 58 µs (ABL)
tPROG with ~ 25% Overhead: ~ 750 µs (Avg - 42.7 MB/s per each die)

Jun 1st, 2024 14:47 EDT change timezone

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