Report an Error

Plextor M9P(G) Plus 512 GB

512 GB
Capacity
88SS1092
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor
Flash
Greentech
Flash
DRAM
Greentech
DRAM
SSD Controller
Controller
NAND Die
NAND Die
The Plextor M9P(G) Plus is a solid-state drive in the M.2 2280 form factor, launched in 2020. It is available in capacities ranging from 256 GB to 1 TB. This page reports specifications for the 512 GB variant. With the rest of the system, the Plextor M9P(G) Plus interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the 88SS1092 Eldora Plus from Marvell, a DRAM cache chip is available. Plextor has installed 96-layer TLC NAND flash on the M9P(G) Plus, the flash chips are made by Toshiba. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. The M9P(G) Plus is rated for sequential read speeds of up to 3,400 MB/s and 2,200 MB/s write; random IO reaches 340K IOPS for read and 320K for writes.
At its launch, the SSD was priced at 97 USD. The warranty length is set to five years, which is an excellent warranty period. Plextor guarantees an endurance rating of 320 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 512 GB
Variants: 256 GB 512 GB 1 TB
Overprovisioning: 35.2 GB / 7.4 %
Production: Active
Released: 2020
Price at Launch: 97 USD
Part Number: Unknown
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: Unknown (Idle)
Unknown (Avg)
8.0 W (Max)

Controller

Manufacturer: Marvell
Name: 88SS1092 Eldora Plus
Architecture: ARM 32-bit Cortex-R5
Core Count: Triple-Core
Frequency: 500 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 8 @ 533 MT/s
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS4
Part Number: TH58LJT1T24BAEF
Type: TLC
Technology: 96-layer
Speed: 533 MT/s .. 800 MT/s
Capacity: 2 chips @ 2 Tbit
Toggle: 3.0
Topology: Charge Trap
Process: 19 nm
Dies per Chip: 8 dies @ 256 Gbit
Planes per Die: 2
Decks per Die: 2
Word Lines: 109 per NAND String
88.1% Vertical Efficiency
Read Time (tR): 59 µs
Program Time (tProg): 625 µs
Die Read Speed: 551 MB/s
Die Write Speed: 56 MB/s
Endurance:
(up to)
1500 P/E Cycles
(3000 in SLC Mode)
Page Size: 16 KB
Block Size: 1152 Pages
Plane Size: 1980 Blocks

DRAM Cache

Type: LPDDR3-1866 CL14
Name: NANYA NT6CL128M32AM-H1
Capacity: 512 MB
(1x 512 MB)
Organization: 4Gx32

Performance

Sequential Read: 3,400 MB/s
Sequential Write: 2,200 MB/s
Random Read: 340,000 IOPS
Random Write: 320,000 IOPS
Endurance: 320 TBW
Warranty: 5 Years
MTBF: 2.5 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • Unknown
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

NAND Die:

Read latency tR: 58 µs (ABL)
Performance:
tPROG (typical) - 2100 µs (MSB)
tR (typical) - 59 µs
tPROG (ower page) ~ 200 µs
Estimated tPROG between 625 ~ 975 µs

Jun 1st, 2024 15:38 EDT change timezone

New Forum Posts

Popular Reviews

Controversial News Posts