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PNY LX3030 2 TB

2 TB
Capacity
Phison E12S
Controller
pSLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor
Front
Back
Tom's Hardware
Back
Package
Package
PCB Front
Tom's Hardware
PCB Front
PCB Back
Tom's Hardware
PCB Back
Flash
Tom's Hardware
Flash
DRAM
Tom's Hardware
DRAM
SSD Controller
Controller
NAND Die
NAND Die
The PNY LX3030 is a solid-state drive in the M.2 2280 form factor, launched on July 15th, 2021. It is available in capacities ranging from 1 TB to 2 TB. This page reports specifications for the 2 TB variant. With the rest of the system, the PNY LX3030 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the PS5012-E12S-32 from Phison, a DRAM cache chip is available. PNY has installed 96-layer pSLC NAND flash on the LX3030, the flash chips are made by Micron. The LX3030 is rated for sequential read speeds of up to 3,200 MB/s and 2,400 MB/s write; random IOPS reach up to 573K for reads and 727K for writes.
At its launch, the SSD was priced at 1169 USD. The warranty length is set to five years, which is an excellent warranty period. PNY guarantees an endurance rating of 20000 TBW, a very high value, making this drive a good choice for write-intensive enterprise applications.

Solid-State-Drive

Capacity: 2 TB (2048 GB)
Variants: 1 TB 2 TB
Overprovisioning: 140.7 GB / 7.4 %
Production: Active
Released: Jul 15th, 2021
Price at Launch: 1169 USD
Part Number: M280LX3030-2TB-RB
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: 0.50 W (Idle)
4.1 W (Avg)
7.1 W (Max)

Controller

Manufacturer: Phison
Name: PS5012-E12S-32
Architecture: ARM 32-bit Cortex-R5
Core Count: Quad-Core
Frequency: 667 MHz
Foundry: TSMC
Process: 12 nm
Flash Channels: 8 @ 667 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Micron
Name: N28A FortisFlash
Part Number: IA8IG66AWA
Type: pSLC
Technology: 96-layer
Speed: 800 MT/s
Capacity: 8 chips @ 8 Tbit
ONFI: 4.0
Topology: Floating Gate
Die Size: 115 mm²
(8.9 Gbit/mm²)
Dies per Chip: 8 dies @ 1 Tbit
Planes per Die: 4
Read Time (tR): 90 µs
Program Time (tProg): 2080 µs
Block Erase Time (tBERS): 15 ms
Die Write Speed: 30 MB/s
Endurance:
(up to)		 30000 P/E Cycles
Page Size: 16 KB
Block Size: 4608 Pages
Plane Size: 492 Blocks

DRAM Cache

Type: DDR3L-1866 CL13
Name: Kingston B5116ECMDXGJD
Capacity: 2048 MB
(2x 1024 MB)
Organization: 8Gx16

Performance

Sequential Read: 3,200 MB/s
Sequential Write: 2,400 MB/s
Random Read: 573,000 IOPS
Random Write: 727,000 IOPS
Endurance: 20000 TBW
Warranty: 5 Years
MTBF: 1.8 Million Hours
Drive Writes Per Day (DWPD): 5.4
Write Cache: N/A
Speed when Cache Exhausted: approx. 3030 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Drive:

This SSD is actually an 8TB QLC SSD running in pSLC Mode, so it doesn't need a pSLC Cache since the 2TB are already in pSLC mode.
Endurance rating in CHIA Mining: 54.000 TB

Controller:

2 main cores using Cortex-R5 clocked at 667 MHz with CoXProcessor technology (one additional dual-core) Cortex-R5 clocked at a lower clock for better efficience. The difference between this revision and the E12 revision is that this has a nichel IHS to improve the temperature, a smaller size, smaller node (12nm TSMC FinFET) and this works with less DRAM capacity.

NAND Die:

tPROG with overhead: 2080 µs (Avg 30 MB/s per die)
Jun 1st, 2024 17:06 EDT change timezone

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