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Samsung 470 Series 256 GB

256 GB
Capacity
Samsung S3C2400
Controller
MLC
Flash
SATA 3 Gbps
Interface
2.5"
Form Factor
PCB Front
Storage Review
PCB Front
PCB Back
Storage Review
PCB Back
DRAM
Storage Review
DRAM
Flash
Storage Review
Flash
SSD Controller
Controller
NAND Die
NAND Die
The Samsung 470 Series was a solid-state drive in the 2.5" form factor, launched in 2009, that is no longer in production. It is only available in the 256 GB capacity listed on this page. With the rest of the system, the Samsung 470 Series interfaces using a SATA 3 Gbps connection. The SSD controller is the S3C2400 (S3C29MAX01-Y340) from Samsung, a DRAM cache chip is available. Samsung has installed MLC NAND flash on the 470 Series, the flash chips are made by Samsung. The 470 Series is rated for sequential read speeds of up to 250 MB/s and 220 MB/s write; random IO reaches 31K IOPS for read and 21K for writes.
The SSD's price at launch is unknown. The warranty length is set to three years, which is above average, but shorter than the five years offered by many other vendors. Samsung guarantees an endurance rating of 22 TBW, a very low value compared to other SSDs.

Solid-State-Drive

Capacity: 256 GB
Overprovisioning: 17.6 GB / 7.4 %
Production: End-of-life
Released: 2009
Part Number: MZ5PA256HMDR
Market: Consumer

Physical

Form Factor: 2.5"
Interface: SATA 3 Gbps
Protocol: AHCI
Power Draw: 0.14 W (Idle)
Unknown (Avg)
0.2 W (Max)

Controller

Manufacturer: Samsung
Name: S3C2400 (S3C29MAX01-Y340)
Architecture: ARM9 32-bit Cortex-A9
Core Count: Dual-Core
Frequency: 220 MHz
Foundry: Samsung
Flash Channels: 8
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Samsung
Name: 32nm MLC
Part Number: K9HDGD8U5M-HCK0
Type: MLC
Technology: Planar
Speed: 66 MT/s .. 133 MT/s
Capacity: 16 chips @ 128 Gbit
Toggle: 1.0
Topology: Floating Gate
Process: 32 nm
Die Size: 159 mm²
(0.2 Gbit/mm²)
Dies per Chip: 4 dies @ 32 Gbit
Planes per Die: 2
Read Time (tR): 80 µs
Program Time (tProg): 1300 µs
Block Erase Time (tBERS): 1.5 ms
Die Write Speed: 12 MB/s
Page Size: 8 KB
Block Size: 128 Pages
Plane Size: 2048 Blocks

DRAM Cache

Type: DDR2-667 CL5
Name: Samsung E-Die K4T1G164QE-HCE6
Capacity: 256 MB
(2x 128 MB)
Organization: 1Gx16

Performance

Sequential Read: 250 MB/s
Sequential Write: 220 MB/s
Random Read: 31,000 IOPS
Random Write: 21,000 IOPS
Endurance: 22 TBW
Warranty: 3 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.1
Write Cache: N/A

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Jun 1st, 2024 14:56 EDT change timezone

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