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Samsung 840 EVO 120 GB

120 GB
Capacity
Samsung MEX
Controller
TLC
Flash
SATA 6 Gbps
Interface
2.5"
Form Factor
Back
Back
PCB Front
Guru3D
PCB Front
PCB Back
Guru3D
PCB Back
DRAM
Guru3D
DRAM
Flash
Guru3D
Flash
SSD Controller
Controller
The Samsung 840 EVO was a solid-state drive in the 2.5" form factor, launched in August 2013, that is no longer in production. It was available in capacities ranging from 120 GB to 1 TB. This page reports specifications for the 120 GB variant. With the rest of the system, the Samsung 840 EVO interfaces using a SATA 6 Gbps connection. The SSD controller is the MEX (S4LN045X01) from Samsung, a DRAM cache chip is available. Samsung has installed TLC NAND flash on the 840 EVO, the flash chips are made by Samsung. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. The cache is sized at 3 GB, once it is full, writes complete at 140 MB/s. The 840 EVO is rated for sequential read speeds of up to 540 MB/s and 410 MB/s write; random IOPS reach up to 94K for reads and 35K for writes.
At its launch, the SSD was priced at 110 USD. The warranty length is set to three years, which is above average, but shorter than the five years offered by many other vendors. The TBW rating for the Samsung 840 EVO 120 GB is unknown.

Solid-State-Drive

Capacity: 120 GB
Variants: 120 GB 250 GB 500 GB 750 GB 1 TB
Overprovisioning: 16.2 GB / 14.5 %
Production: End-of-life
Released: Aug 2013
Price at Launch: 110 USD
Part Number: MZ-75E120
Market: Consumer

Physical

Form Factor: 2.5" (Double-Sided)
Interface: SATA 6 Gbps
Protocol: AHCI
Power Draw: 0.05 W (Idle)
Unknown (Avg)
Unknown (Max)

Controller

Manufacturer: Samsung
Name: MEX (S4LN045X01)
Architecture: ARM 32-bit Cortex R4
Core Count: Triple-Core
Frequency: 400 MHz
Foundry: Samsung
Process: 32 nm
Flash Channels: 8
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Samsung
Name: 19nm
Part Number: K9CHGY8S5M-CCK0
Type: TLC
Technology: Planar
Speed: 533 MT/s
Capacity: 2 chips @ 512 Gbit
Toggle: 2.0
Topology: Charge Trap
Process: 19 nm
Die Size: 144 mm²
(0.9 Gbit/mm²)
Dies per Chip: 4 dies @ 128 Gbit
Planes per Die: 4
Page Size: 8 KB

DRAM Cache

Type: LPDDR2-1066
Name: SAMSUNG K4P2G324ED-FGC2
Capacity: 256 MB
(1x 256 MB)
Organization: 2Gx32

Performance

Sequential Read: 540 MB/s
Sequential Write: 410 MB/s
Random Read: 94,000 IOPS
Random Write: 35,000 IOPS
Endurance: Unknown
Warranty: 3 Years
MTBF: 1.5 Million Hours
SLC Write Cache: approx. 3 GB
(static only)
Speed when Cache Exhausted: approx. 140 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-128
  • AES-256
RGB Lighting: No
PS5 Compatible: No

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Notes

Jun 1st, 2024 18:02 EDT change timezone

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