Capacity: | 8 TB (8000 GB) |
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Variants: | 1 TB 2 TB 4 TB 8 TB |
Overprovisioning: | 741.4 GB / 10.0 % |
Production: | Active |
Released: | Jun 30th, 2020 |
Price at Launch: | 850 USD |
Part Number: | MZ-77Q8T0 |
Market: | Consumer |
Form Factor: | 2.5" |
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Interface: | SATA 6 Gbps |
Protocol: | AHCI |
Power Draw: |
0.04 W (Idle) 3.2 W (Avg) 5.5 W (Max) |
Manufacturer: | Samsung |
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Name: | MKX (Metis S4LR059) |
Architecture: | ARM 32-bit Cortex-R4 |
Core Count: | Triple-Core |
Foundry: | Samsung FinFET |
Process: | 14 nm |
Flash Channels: | 8 |
Chip Enables: | 8 |
Controller Features: | DRAM (enabled) |
Manufacturer: | Samsung |
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Name: | V-NAND V5 |
Part Number: | K9XVGB8J1A-CCK0 |
Type: | QLC |
Technology: | 92-layer |
Speed: | 1200 MT/s |
Capacity: | 8 chips @ 8 Tbit |
Toggle: | 4.0 |
Topology: | Charge Trap |
Process: | 19 nm |
Die Size: | 136 mm² (7.5 Gbit/mm²) |
Dies per Chip: | 8 dies @ 1 Tbit |
Planes per Die: | 2 |
Decks per Die: | 1 |
Word Lines: |
100 per NAND String
92.0% Vertical Efficiency |
Read Time (tR): | 110 µs |
Program Time (tProg): | 2000 µs |
Block Erase Time (tBERS): | 3.5 ms |
Die Write Speed: | 18 MB/s |
Page Size: | 16 KB |
Type: | LPDDR4-1866 |
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Name: | SAMSUNG K4FCE6Q4HM-BGCG |
Capacity: |
8192 MB
(1x 8192 MB) |
Organization: | 64Gx16 |
Sequential Read: | 560 MB/s |
---|---|
Sequential Write: | 530 MB/s |
Random Read: | 98,000 IOPS |
Random Write: | 88,000 IOPS |
Endurance: | 2880 TBW |
Warranty: | 3 Years |
MTBF: | 1.5 Million Hours |
Drive Writes Per Day (DWPD): | 0.3 |
SLC Write Cache: |
approx. 78 GB
(72 GB Dynamic + 6 GB Static) |
Speed when Cache Exhausted: | approx. 160 MB/s |
TRIM: | Yes |
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SMART: | Yes |
Power Loss Protection: | No |
Encryption: |
|
RGB Lighting: | No |
PS5 Compatible: | No |
Drive:NAND Speed Bus: Up to 1400 MT/s. |